Patents by Inventor Wenmei Li
Wenmei Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11904313Abstract: The invention discloses a liquid quantifying device which comprises a base body and a liquid quantifying area arranged on the base body; the liquid quantifying area is provided with a preset volume, two ends of the liquid quantifying area are respectively provided with a liquid quantitative inlet and a liquid quantitative outlet, the liquid flows into the liquid quantifying area from the liquid quantitative inlet and reaches the liquid quantitative outlet after the liquid quantifying area is filled; and a liquid identification device is arranged at a relevant position of the liquid quantitative outlet and used for identifying the liquid reaching the liquid quantitative outlet. The invention also discloses a use of the liquid quantifying device in a microfluidic chip. The invention can improve the accuracy of quantification and detection.Type: GrantFiled: February 19, 2019Date of Patent: February 20, 2024Assignee: GUANGZHOU WONDFO BIOTECH CO., LTD.Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
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Patent number: 11830942Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.Type: GrantFiled: March 4, 2021Date of Patent: November 28, 2023Assignee: Infineon Technologies LLCInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Publication number: 20220302297Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.Type: ApplicationFiled: March 4, 2021Publication date: September 22, 2022Applicant: Cypress Semiconductor CorporationInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Publication number: 20210370293Abstract: The present invention discloses a micro-fluidic chip, comprising a chip main body, a sample inlet, an air inlet, a liquid driving force inlet, an air sublet, a main fluid channel and multiple functional chambers provided on the chip main body; the main fluid channel communicates with the multiple functional chambers, and the liquid driving force inlet is used to connect a liquid driving device capable of driving liquid to flow in the main fluid channel and the multiple functional chambers; the micro-fluidic chip of the present invention identifies, positions and quantifies a liquid sample by means of a specific liquid quantification chamber, thereby decreasing chip manufacturing process difficulty, and increasing quantification accuracy, and is particularly suitable for quantification and testing of whole blood samples.Type: ApplicationFiled: February 19, 2019Publication date: December 2, 2021Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
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Publication number: 20210362149Abstract: The invention discloses a liquid quantifying device which comprises a base body and a liquid quantifying area arranged on the base body; the liquid quantifying area is provided with a preset volume, two ends of the liquid quantifying area are respectively provided with a liquid quantitative inlet and a liquid quantitative outlet, the liquid flows into the liquid quantifying area from the liquid quantitative inlet and reaches the liquid quantitative outlet after the liquid quantifying area is filled; and a liquid identification device is arranged at a relevant position of the liquid quantitative outlet and used for identifying the liquid reaching the liquid quantitative outlet. The invention also discloses a use of the liquid quantifying device in a microfluidic chip. The invention can improve the accuracy of quantification and detection.Type: ApplicationFiled: February 19, 2019Publication date: November 25, 2021Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
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Publication number: 20210123903Abstract: The present invention discloses a micro-fluidic chip, comprising a chip main body, a sample inlet, a liquid driving force inlet, a main fluid channel and multiple functional chambers provided on the chip main body. The micro-fluidic chip of the present invention identifies, positions and quantifies a liquid by means of a specific liquid quantification chamber, thereby decreasing chip manufacturing process difficulty, and increasing quantification accuracy.Type: ApplicationFiled: February 19, 2019Publication date: April 29, 2021Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
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Patent number: 10962545Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.Type: GrantFiled: August 13, 2018Date of Patent: March 30, 2021Assignees: BGI TECH SOLUTIONS CO., LTD, BEIJING INSTITUTE FOR CANCER RESEARCHInventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
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Patent number: 10944000Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.Type: GrantFiled: December 3, 2019Date of Patent: March 9, 2021Assignee: Cypress Semiconductor CorporationInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Publication number: 20200212215Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.Type: ApplicationFiled: December 3, 2019Publication date: July 2, 2020Applicant: Cypress Semiconductor CorporationInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Patent number: 10516044Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.Type: GrantFiled: October 21, 2013Date of Patent: December 24, 2019Assignee: Cypress Semiconductor CorporationInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Publication number: 20190072561Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.Type: ApplicationFiled: August 13, 2018Publication date: March 7, 2019Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
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Patent number: 10073100Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.Type: GrantFiled: September 29, 2015Date of Patent: September 11, 2018Assignees: BGI TECH SOLUTIONS CO., LTD, BEIJING INSTITUTE FOR CANCER RESEARCHInventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
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Publication number: 20160131657Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.Type: ApplicationFiled: September 29, 2015Publication date: May 12, 2016Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
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Patent number: 8742496Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: GrantFiled: June 17, 2013Date of Patent: June 3, 2014Assignee: Spansion LLCInventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang
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Publication number: 20140042514Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.Type: ApplicationFiled: October 21, 2013Publication date: February 13, 2014Applicants: Spansion LLC, Advanced Micro Devices, Inc.Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Patent number: 8637918Abstract: A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed from the peripheral section. A peripheral polysilicon layer, which is thicker than the core polysilicon layer of the layered stack, is next formed on the layered stack and the peripheral section. The layered stack is then isolated from the peripheral polysilicon layer by removing a portion of the peripheral polysilicon layer from the core section, and polysilicon lines are patterned in the isolated layered stack.Type: GrantFiled: November 10, 2011Date of Patent: January 28, 2014Assignee: Spansion LLCInventors: Shenqing Fang, Chun Chen, Wenmei Li, Inkuk Kang, Gang Xue, Hyesook Hong
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Patent number: 8614475Abstract: A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further includes depositing a second dielectric layer over the first dielectric layer. Together, the first and second dielectric layers form an interlayer dielectric without voids.Type: GrantFiled: December 31, 2012Date of Patent: December 24, 2013Assignees: Spansion LLC, Advanced Mirco Devices, Inc.Inventors: Minh Van Ngo, Hirokazu Tokuno, Angela T. Hui, Wenmei Li, Hsiao-Han Thio
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Publication number: 20130277732Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: ApplicationFiled: June 17, 2013Publication date: October 24, 2013Inventors: Shenqing FANG, Gang XUE, Wenmei LI, Inkuk KANG
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Patent number: 8564041Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.Type: GrantFiled: October 20, 2006Date of Patent: October 22, 2013Assignees: Advanced Micro Devices, Inc., Spansion LLCInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Patent number: 8487373Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.Type: GrantFiled: April 29, 2009Date of Patent: July 16, 2013Assignee: Spanion LLCInventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang