Patents by Inventor Wenmei Li

Wenmei Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11904313
    Abstract: The invention discloses a liquid quantifying device which comprises a base body and a liquid quantifying area arranged on the base body; the liquid quantifying area is provided with a preset volume, two ends of the liquid quantifying area are respectively provided with a liquid quantitative inlet and a liquid quantitative outlet, the liquid flows into the liquid quantifying area from the liquid quantitative inlet and reaches the liquid quantitative outlet after the liquid quantifying area is filled; and a liquid identification device is arranged at a relevant position of the liquid quantitative outlet and used for identifying the liquid reaching the liquid quantitative outlet. The invention also discloses a use of the liquid quantifying device in a microfluidic chip. The invention can improve the accuracy of quantification and detection.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: February 20, 2024
    Assignee: GUANGZHOU WONDFO BIOTECH CO., LTD.
    Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
  • Patent number: 11830942
    Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: November 28, 2023
    Assignee: Infineon Technologies LLC
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Publication number: 20220302297
    Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.
    Type: Application
    Filed: March 4, 2021
    Publication date: September 22, 2022
    Applicant: Cypress Semiconductor Corporation
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Publication number: 20210370293
    Abstract: The present invention discloses a micro-fluidic chip, comprising a chip main body, a sample inlet, an air inlet, a liquid driving force inlet, an air sublet, a main fluid channel and multiple functional chambers provided on the chip main body; the main fluid channel communicates with the multiple functional chambers, and the liquid driving force inlet is used to connect a liquid driving device capable of driving liquid to flow in the main fluid channel and the multiple functional chambers; the micro-fluidic chip of the present invention identifies, positions and quantifies a liquid sample by means of a specific liquid quantification chamber, thereby decreasing chip manufacturing process difficulty, and increasing quantification accuracy, and is particularly suitable for quantification and testing of whole blood samples.
    Type: Application
    Filed: February 19, 2019
    Publication date: December 2, 2021
    Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
  • Publication number: 20210362149
    Abstract: The invention discloses a liquid quantifying device which comprises a base body and a liquid quantifying area arranged on the base body; the liquid quantifying area is provided with a preset volume, two ends of the liquid quantifying area are respectively provided with a liquid quantitative inlet and a liquid quantitative outlet, the liquid flows into the liquid quantifying area from the liquid quantitative inlet and reaches the liquid quantitative outlet after the liquid quantifying area is filled; and a liquid identification device is arranged at a relevant position of the liquid quantitative outlet and used for identifying the liquid reaching the liquid quantitative outlet. The invention also discloses a use of the liquid quantifying device in a microfluidic chip. The invention can improve the accuracy of quantification and detection.
    Type: Application
    Filed: February 19, 2019
    Publication date: November 25, 2021
    Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
  • Publication number: 20210123903
    Abstract: The present invention discloses a micro-fluidic chip, comprising a chip main body, a sample inlet, a liquid driving force inlet, a main fluid channel and multiple functional chambers provided on the chip main body. The micro-fluidic chip of the present invention identifies, positions and quantifies a liquid by means of a specific liquid quantification chamber, thereby decreasing chip manufacturing process difficulty, and increasing quantification accuracy.
    Type: Application
    Filed: February 19, 2019
    Publication date: April 29, 2021
    Inventors: Xuan Meng, Huifang Wan, Haisheng Hu, Wenmei Li
  • Patent number: 10962545
    Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: March 30, 2021
    Assignees: BGI TECH SOLUTIONS CO., LTD, BEIJING INSTITUTE FOR CANCER RESEARCH
    Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
  • Patent number: 10944000
    Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: March 9, 2021
    Assignee: Cypress Semiconductor Corporation
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Publication number: 20200212215
    Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.
    Type: Application
    Filed: December 3, 2019
    Publication date: July 2, 2020
    Applicant: Cypress Semiconductor Corporation
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Patent number: 10516044
    Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: December 24, 2019
    Assignee: Cypress Semiconductor Corporation
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Publication number: 20190072561
    Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.
    Type: Application
    Filed: August 13, 2018
    Publication date: March 7, 2019
    Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
  • Patent number: 10073100
    Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: September 11, 2018
    Assignees: BGI TECH SOLUTIONS CO., LTD, BEIJING INSTITUTE FOR CANCER RESEARCH
    Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
  • Publication number: 20160131657
    Abstract: The present invention relates to methods, kits, and compositions for detecting and/or diagnosing metastatic potential of cancer cells or for evaluating prognosis in a patient with cancer by detection of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule. The present invention also relates to the use of the protein expression level of an HLA class I molecule and/or the copy number variation of a polynucleotide encoding the HLA class I molecule as a prognosis biomarker and metastasis predictive biomarker of cancer.
    Type: Application
    Filed: September 29, 2015
    Publication date: May 12, 2016
    Inventors: Rui Xing, Youyong Lu, Zhibo Gao, Wenmei Li, Jiantao Cui, Lin Li, Longyun Chen
  • Patent number: 8742496
    Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: June 3, 2014
    Assignee: Spansion LLC
    Inventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang
  • Publication number: 20140042514
    Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
    Type: Application
    Filed: October 21, 2013
    Publication date: February 13, 2014
    Applicants: Spansion LLC, Advanced Micro Devices, Inc.
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Patent number: 8637918
    Abstract: A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed from the peripheral section. A peripheral polysilicon layer, which is thicker than the core polysilicon layer of the layered stack, is next formed on the layered stack and the peripheral section. The layered stack is then isolated from the peripheral polysilicon layer by removing a portion of the peripheral polysilicon layer from the core section, and polysilicon lines are patterned in the isolated layered stack.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: January 28, 2014
    Assignee: Spansion LLC
    Inventors: Shenqing Fang, Chun Chen, Wenmei Li, Inkuk Kang, Gang Xue, Hyesook Hong
  • Patent number: 8614475
    Abstract: A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further includes depositing a second dielectric layer over the first dielectric layer. Together, the first and second dielectric layers form an interlayer dielectric without voids.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: December 24, 2013
    Assignees: Spansion LLC, Advanced Mirco Devices, Inc.
    Inventors: Minh Van Ngo, Hirokazu Tokuno, Angela T. Hui, Wenmei Li, Hsiao-Han Thio
  • Publication number: 20130277732
    Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
    Type: Application
    Filed: June 17, 2013
    Publication date: October 24, 2013
    Inventors: Shenqing FANG, Gang XUE, Wenmei LI, Inkuk KANG
  • Patent number: 8564041
    Abstract: A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: October 22, 2013
    Assignees: Advanced Micro Devices, Inc., Spansion LLC
    Inventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
  • Patent number: 8487373
    Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: July 16, 2013
    Assignee: Spanion LLC
    Inventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang