Patents by Inventor Werner Knaepen
Werner Knaepen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240068097Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.Type: ApplicationFiled: August 21, 2023Publication date: February 29, 2024Inventors: Subir Parui, Werner Knaepen, Dieter Pierreux, Kelly Houben, Herbert Terhorst, Theodorus G.M. Oosterlaken, Angelos Karagiannis
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Patent number: 11898243Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.Type: GrantFiled: December 7, 2020Date of Patent: February 13, 2024Assignee: ASM IP Holding B.V.Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
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Patent number: 11851755Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.Type: GrantFiled: November 19, 2020Date of Patent: December 26, 2023Assignee: ASM IP Holding B.V.Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt de Roest, Bert Jongbloed, Dieter Pierreux
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Patent number: 11830730Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.Type: GrantFiled: August 29, 2017Date of Patent: November 28, 2023Assignee: ASM IP Holding B.V.Inventors: Arjen Klaver, Werner Knaepen, Lucian Jdira, Gido van der Star, Ruslan Kvetny
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Publication number: 20230360905Abstract: A method for forming a silicon-comprising layer on a substrate may comprise providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace. A repetitive deposition cycle is performed. The deposition cycle comprises a first deposition pulse and a second deposition pulse comprising a provision, into the process chamber, of a first precursor and a second precursor, respectively. The deposition cycle further comprises a first purge pulse and a second purge pulse for removing, from the process chamber, a portion of the first precursor and a portion of the second precursor, respectively. The process chamber is maintained, during the deposition cycle, at a process temperature in a range from about 400° C. to about 650° C. and at a first pressure being different from a second pressure, during the first deposition pulse and during the second deposition pulse, respectively.Type: ApplicationFiled: May 4, 2023Publication date: November 9, 2023Inventors: Werner Knaepen, Arjen Klaver, Dieter Pierreux, Bert Jongbloed
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Publication number: 20230335397Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: June 12, 2023Publication date: October 19, 2023Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido van Der Star, Toshiya Suzuki
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Publication number: 20230230833Abstract: A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.Type: ApplicationFiled: March 28, 2023Publication date: July 20, 2023Inventors: Dieter Pierreux, Steven van Aerde, Bert Jongbloed, Kelly Houben, Werner Knaepen, Wilco Verweij
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Patent number: 11694892Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 8, 2021Date of Patent: July 4, 2023Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido van Der Star, Toshiya Suzuki
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Publication number: 20230207309Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.Type: ApplicationFiled: March 6, 2023Publication date: June 29, 2023Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R.A. Van Aerde, Suvi Haukka, Atsuki Fukazawa, Hideaki Fukuda
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Publication number: 20230183856Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.Type: ApplicationFiled: January 17, 2023Publication date: June 15, 2023Applicant: ASM IP Holding B.V.Inventors: Ivo Johannes Raaijmakers, Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel
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Publication number: 20230175136Abstract: The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.Type: ApplicationFiled: January 26, 2023Publication date: June 8, 2023Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed, Jeroen Fluit
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Patent number: 11646204Abstract: A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.Type: GrantFiled: June 21, 2021Date of Patent: May 9, 2023Assignee: ASM IP Holding B.V.Inventors: Dieter Pierreux, Steven van Aerde, Bert Jongbloed, Kelly Houben, Werner Knaepen, Wilco Verweij
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Patent number: 11629407Abstract: The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.Type: GrantFiled: February 21, 2020Date of Patent: April 18, 2023Assignee: ASM IP Holding B.V.Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed, Jeroen Fluit
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Patent number: 11610775Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.Type: GrantFiled: July 14, 2017Date of Patent: March 21, 2023Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde, Suvi Haukka, Atsuki Fukazawa, Hideaki Fukuda
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Patent number: 11581186Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.Type: GrantFiled: December 15, 2016Date of Patent: February 14, 2023Assignee: ASM IP Holding B.V.Inventors: Ivo Johannes Raaijmakers, Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel
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Publication number: 20230002889Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.Type: ApplicationFiled: June 27, 2022Publication date: January 5, 2023Inventors: Dieter Pierreux, Werner Knaepen, Arjen Klaver, Lucian Jdira, Marina Mariano, Theodorus G.M. Oosterlaken, Herbert Terhorst, Bert Jongbloed, Subir Parui
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Publication number: 20220389578Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.Type: ApplicationFiled: August 11, 2022Publication date: December 8, 2022Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt De Roest, Bert Jongbloed, Dieter Pierreux
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Patent number: 11447861Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.Type: GrantFiled: December 15, 2016Date of Patent: September 20, 2022Assignee: ASM IP Holding B.V.Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt De Roest, Bert Jongbloed, Dieter Pierreux
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Publication number: 20220162751Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.Type: ApplicationFiled: November 18, 2021Publication date: May 26, 2022Inventors: Kornelius Haanstra, Lucian C. Jdira, Chris G.M. de Ridder, Robin Roelofs, Werner Knaepen, Herbert Terhorst
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Patent number: 11230766Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.Type: GrantFiled: March 29, 2018Date of Patent: January 25, 2022Assignee: ASM IP Holding B.V.Inventors: Dieter Pierreux, Cornelis Thaddeus Herbschleb, Werner Knaepen, Bert Jongbloed, Steven Van Aerde, Kelly Houben, Theodorus Oosterlaken, Chris de Ridder, Lucian Jdira