Patents by Inventor Werner Knaepen
Werner Knaepen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190301014Abstract: The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.Type: ApplicationFiled: March 29, 2018Publication date: October 3, 2019Inventors: Dieter Pierreux, Cornelis Thaddeus Herbschleb, Werner Knaepen, Bert Jongbloed, Steven Van Aerde, Kelly Houben, Theodorus Oosterlaken, Chris de Ridder, Lucian Jdira
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Publication number: 20190295837Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 14, 2017Publication date: September 26, 2019Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20190157086Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.Type: ApplicationFiled: January 23, 2019Publication date: May 23, 2019Inventors: Jan Willem MAES, Werner KNAEPEN, Roel GRONHEID, Arjun SINGH
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Publication number: 20190155159Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.Type: ApplicationFiled: April 7, 2017Publication date: May 23, 2019Inventors: Werner Knaepen, Jan Willem Maes, Maarten Stokhof, Roel Gronheid, Hari Pathangi Sriraman
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Publication number: 20190066997Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.Type: ApplicationFiled: August 29, 2017Publication date: February 28, 2019Inventors: Arjen Klaver, Werner Knaepen, Lucian Jdira, Gido van der Star, Ruslan Kvetny
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Patent number: 10204782Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.Type: GrantFiled: April 18, 2016Date of Patent: February 12, 2019Assignees: IMEC vzw, ASM IP HOLDING B.V.Inventors: Jan Willem Maes, Werner Knaepen, Roel Gronheid, Arjun Singh
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Patent number: 10199223Abstract: An etch stop layer comprises a metal oxide comprising a metal selected from the group consisting of metals of Group 4 of the periodic table, metals of Group 5 of the periodic table, metals of Group 6 of the periodic table, and yttrium. The metal oxide forms exceptionally thin layers that are resistant to ashing and HF exposure. Subjecting the etch stop layer to both ashing and HF etch processes removes less than 0.3 nm of the thickness of the etch stop layer, and more preferably less than 0.25 nm. The etch stop layer may be thin and may have a thickness of about 0.5-2 nm. In some embodiments, the etch stop layer comprises tantalum oxide (TaO).Type: GrantFiled: January 24, 2017Date of Patent: February 5, 2019Assignee: ASM IP HOLDING B.V.Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed
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Publication number: 20180350623Abstract: The disclosure relates generally to the field of processing substrates, for example comprising materials such as quartz, glass or silicon. The disclosure more particular relates to providing wet etch protection layers comprising boron and carbon and etching the substrate in a hydrogen fluoride aqueous solution. One or more of the boron and carbon containing films can have a thickness of at least 5, preferably 10 and, more preferably 30 nm. The method comprises wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes.Type: ApplicationFiled: May 31, 2018Publication date: December 6, 2018Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed
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Publication number: 20180286679Abstract: The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Inventors: Kelly Houben, Steven R.A. Van Aerde, Maarten Stokhof, Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Publication number: 20180173109Abstract: An example embodiment relates to a method for making a mask layer. The method may include providing a patterned layer on a substrate, the patterned layer including at least a first set of lines of an organic material of a first nature, the lines having a line height, a first line width roughness, and being separated either by voids or by a material of a second nature. The method may further include infiltrating at least a top portion of the first set of lines with a metal or ceramic material. The method may further include removing the organic material by oxidative plasma etching, thereby forming a second set of lines of metal or ceramic material on the substrate, the second set of lines having a second line width roughness, smaller than the first line width roughness.Type: ApplicationFiled: November 15, 2017Publication date: June 21, 2018Applicants: IMEC VZW, Katholieke Universiteit Leuven, KU LEUVEN R&DInventors: Roel Gronheid, Arjun Singh, Werner Knaepen
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Publication number: 20180171475Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.Type: ApplicationFiled: December 15, 2016Publication date: June 21, 2018Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt De Roest, Bert Jongbloed, Dieter Pierreux
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Publication number: 20180174826Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.Type: ApplicationFiled: December 15, 2016Publication date: June 21, 2018Inventors: Ivo Johannes Raaijmakers, Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel
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Patent number: 9916980Abstract: A method of forming a layer on a substrate is provided by providing the substrate with a hardmask material. The hardmask material is infiltrated with infiltration material during N infiltration cycles by: a) providing a first precursor to the hardmask material on the substrate in the reaction chamber for a first period T1; b) removing a portion of the first precursor for a second period T2; and, c) providing a second precursor to the hardmask material on the substrate for a third period T3, allowing the first and second precursor to react with each other forming the infiltration material.Type: GrantFiled: December 15, 2016Date of Patent: March 13, 2018Assignee: ASM IP Holding B.V.Inventors: Werner Knaepen, Jan Willem Maes, Bert Jongbloed, Krzysztof Kamil Kachel, Dieter Pierreux, David Kurt De Roest
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Patent number: 9887082Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 28, 2016Date of Patent: February 6, 2018Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20180033606Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 28, 2016Publication date: February 1, 2018Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Patent number: 9837281Abstract: A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates.Type: GrantFiled: May 25, 2016Date of Patent: December 5, 2017Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Patent number: 9812320Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.Type: GrantFiled: July 28, 2016Date of Patent: November 7, 2017Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde, Suvi Haukka, Atsuki Fukuzawa, Hideaki Fukuda
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Patent number: 9799509Abstract: A process for depositing aluminum oxynitride (AlON) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to an oxygen precursor to form AlON. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to an oxygen precursor together constitute an AlON deposition cycle. A plurality of AlON deposition cycles may be performed to deposit an AlON film of a desired thickness. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.Type: GrantFiled: November 26, 2014Date of Patent: October 24, 2017Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Publication number: 20170298503Abstract: A system and a method for forming a film with an annealing step and a deposition step is disclosed. The system performs an annealing step for inducing self-assembly or alignment within a polymer. The system also performs a selective deposition step in order to enable selective deposition on a polymer.Type: ApplicationFiled: April 18, 2016Publication date: October 19, 2017Inventors: Jan Willem MAES, Werner KNAEPEN
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Publication number: 20170301542Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.Type: ApplicationFiled: April 18, 2016Publication date: October 19, 2017Inventors: Jan Willem MAES, Werner KNAEPEN, Roel GRONHEID, Arjun Singh