Abstract: A continuous grill with at least two grill rollers forming at least one grilling gap, in one aspect, includes an assembly capable of rotating relative to and projecting out of or into at least one roller. An inner rotary bearing is disposed between this roller and assembly and/or this assembly is mounted on a housing of the grill or on a carrier group mounted immovably relative to the housing. In another aspect, the grill includes at least one electrically designed and/or locally measuring thermometer disposed inside at least one roller. In a further aspect, the grill includes at least one roller coated with a non-stick coating or enameled. A method for cooking of products for grilling on a continuous grill regulates the speed of throughput of the product for grilling through the gap and/or the temperature of at least one roller as a function of certain parameters.

Abstract: A surface-mountable device (100) is specified, having a mounting side (101), a top side (102) lying opposite the mounting side (101), an electrically insulating carrier plate (1), an electrical component (2) and a housing (3). The carrier plate (1) terminates the device (100) toward the mounting side (101). Furthermore, the carrier plate (1) has a fixing side (103) lying opposite the mounting side (101). For the purpose of making electrical contact with the component (2), the carrier plate (1) has conductor tracks (4) arranged on the fixing side (103), contact areas (5) arranged on the mounting side (101), and openings (6), wherein in each case a contact area (5) is electrically conductively connected to a conductor track (4) by an opening (6). The component (2) is enclosed by the housing (3), wherein at least one opening (6) is arranged below the component (2). The housing (3) and the carrier plate (1) are arranged flush with one another in a plan view of the carrier plate (1).

Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

Abstract: A surface-mountable device (100) is specified, comprising a mounting side (101), a top side (102) lying opposite the mounting side (101), an electrically insulating carrier plate (1), an electrical component (2) and a housing (3). The carrier plate (1) terminates the device (100) toward the mounting side (101). Furthermore, the carrier plate (1) has a fixing side (103) lying opposite the mounting side (101). For the purpose of making electrical contact with the component (2), the carrier plate (1) has conductor tracks (4) arranged on the fixing side (103), contact areas (5) arranged on the mounting side (101), and openings (6), wherein in each case a contact area (5) is electrically conductively connected to a conductor track (4) by means of an opening (6). The component (2) is enclosed by the housing (3), wherein at least one opening (6) is arranged below the component (2). The housing (3) and the carrier plate (1) are arranged flush with one another in a plan view of the carrier plate (1).

Abstract: A detector system with a microelectronic semiconductor chip and a separate optoelectronic detector chip is specified, wherein the detector chip is positioned on the semiconductor chip. A detector subassembly with such a detector system is also specified.

Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals. At least one detector element includes a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region. The radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector. A channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Abstract: An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer are made from a Ti/TiN layer (6), applied to an aluminum contact surface (5) of the silicon support (1), by means of a deposition method. The aluminum contact surface (5) is located on a landing pad (2) on the silicon support (1).

Abstract: A detector system (100) with a microelectronic semiconductor chip (20) and a separate optoelectronic detector chip (10) is specified, wherein the detector chip is positioned on the semiconductor chip. A detector subassembly with such a detector system is also specified.

Abstract: An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carrier substrate with a first surface and a second surface. The semiconductor component is configured on the first surface of the carrier substrate. The second surface of the carrier substrate has a metallization that can be connected to a reference voltage applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate. The first contact of the semiconductor component is electrically connected to the first contacting region.

Abstract: A sensor arrangement has a layer sequence that includes a holding substrate, an auxiliary layer, a detection layer and an insulating layer. The holding substrate holds detection elements. The auxiliary layer extends continuously over the detection elements or contains separate regions which are associated with a detection element. The detection layer has separate detection regions which are contained in a detection element and contain at least one semiconductor component which is sensitive to radiation. The insulating layer has separate insulating regions for electrically insulating the detection regions from a point of contact having electrically conductive connections and pads fitted on the free side. The pads are electrically connected to connecting points which are routed to the semiconductor components. This sensor arrangement can be used for detecting X-ray radiation and can be manufactured with particular ease.

Abstract: An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting connection between the silicon support and the functional element. The assembly and adhesive layer are arranged on the support. The assembly and adhesive layer are made from a Ti/TiN layer (6), applied to an aluminum contact surface (5) of the silicon support (1), by means of a deposition method. The aluminum contact surface (5) is located on a landing pad (2) on the silicon support (1).

Abstract: The invention relates to an optical transmitting and/or receiving device, having: a semiconductor component with a first contact for connection with a reference voltage and a second contact for applying or leading away a high-frequency electrical signal; an electrically conducting carrier substrate with a first surface and a second surface, the semiconductor component being arranged on the first surface of the carrier substrate, the second surface of the carrier substrate having a metallization which can be connected to the reference voltage, and the reference voltage being applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate, and the first contact of the semiconductor component being electrically connected to the first contacting region.

Abstract: A sensor arrangement has a layer sequence that includes a holding substrate, an auxiliary layer, a detection layer and an insulating layer. The holding substrate holds detection elements. The auxiliary layer extends continuously over the detection elements or contains separate regions which are associated with a detection element. The detection layer has separate detection regions which are contained in a detection element and contain at least one semiconductor component which is sensitive to radiation. The insulating layer has separate insulating regions for electrically insulating the detection regions from a point of contact having electrically conductive connections and pads fitted on the free side. The Dads are electrically connected to connecting points which are routed to the semiconductor components. This sensor arrangement can be used for detecting X-ray radiation and can be manufactured with particular ease.

Abstract: An ultraviolet light radiation photodetector includes a quartz lens, a UV transmission filter, a silicon photodiode, and a scintillator layer. After passing through the quartz lens and the UV transmission filter, the UV light to be detected is converted in the scintillator layer, preferably applied to the surface on a light-exiting side of the UV transmission filter, into light radiation of a greater wavelength, for which the silicon photodiode exhibits a greater sensitivity. If desired, an additional edge filter can be used to improve the configuration's drop in sensitivity between 350 and 400 nm.

Abstract: In a projection arrangement with a projector and a deflecting mirror in which the image projection, proceeding from a projection direction along a principal projection axis impinges on the deflecting mirror which is supported so as to be movable in two spatial direction and whose mirror surface deflects a projected light bundle at an elevation angle and at an azimuth angle onto a projection surface standing on the ground the image projection is effected from the direction of a zenith at an angle &bgr; which is less than 60° in relation to a vertical line from the zenith and the deflecting mirror is arranged at the ground wherein the projected light bundle can be deflected toward the projection surface so that an image can be generated on the projection surface and moved on the latter.

Abstract: An ultraviolet light radiation photodetector includes a quartz lens, a UV transmission filter, a silicon photodiode, and a scintillator layer. After passing through the quartz lens and the UV transmission filter, the UV light to be detected is converted in the scintillator layer, preferably applied to the surface on a light-exiting side of the UV transmission filter, into light radiation of a greater wavelength, for which the silicon photodiode exhibits a greater sensitivity. If desired, an additional edge filter can be used to improve the configuration's drop in sensitivity between 350 and 400 nm.

Abstract: An optoelectronic sensor module is provided for recognition of reflection patterns on a magnetic data carrier. A laser component having a laser radiation axis, at least a first sensor photodetector laterally displaced relative to the laser radiation axis, electrically conducting bond pads and mutually electrically insulated conducting paths, are disposed on or in a silicon submount or cooling element. A lens configuration which is provided at a side of the laser emitter component opposite the cooling element, is fixed on the cooling element by at least one supporting web.

Abstract: An integrated semiconductor circuit has a component formed of a semiconductor substrate with an active pn junction formed between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The semiconductor circuit also has a protective circuit that is associated with the component and serves to dissipate overvoltages and/or electrostatic charges. The protective circuit has a protective pn junction formed in a semiconductor mount with a first semiconductor mount region of the first conductivity type and a second semiconductor mount region of the second conductivity type. The second semiconductor mount region of the second conductivity type is electrically coupled to the first semiconductor region formed in the semiconductor substrate of the first conductivity type.