Patents by Inventor Werner Pamler

Werner Pamler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a component, and component having a metal layer and an insulation layer
    Publication number: 20030157798
    Abstract: A method for improving the adhesion between a noble metal layer and an insulation layer includes configuring a silicon layer between the noble metal layer and the insulation layer. The silicon layer is siliconized and oxidized by a thermal treatment in an oxidative environment, resulting in an oxidized silicide layer with high intermixing of the noble metal and the formed oxide. The relatively large inner surface achieved as a result improves the adhesion between the noble metal layer and the insulation layer.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 21, 2003
    Inventors: Zvonimir Gabric, Werner Pamler, Volker Weinrich
  • Substrate with at least two metal structures disposed thereon, and method for fabricating it
    Publication number: 20010002732
    Abstract: Metal structures that can be produced by a damascene process are disposed in a first insulating layer and a second insulating layer is disposed above the latter. There is in each case at least one cavity which is disposed between the metal structures, is disposed in the first insulating layer and is covered by the second insulating layer. The cavities and the metal structures are produced next to one another by self-aligned process steps.
    Type: Application
    Filed: November 29, 2000
    Publication date: June 7, 2001
    Inventors: Siegfried Schwarzl, Werner Pamler, Zvonimir Gabric
  • Method for fastening a first substrate on a second substrate and employment of said method for manufacturing a three-dimensional circuit arrangement
    Patent number: 5626279
    Abstract: For fastening a first substrate (11) on a second substrate (21), gallium is selectively deposited on the surface of electrically conductive structures (18) located on the first substrate (11), being deposited in a CVD process upon employment of a metalloorganic compound. After the joining of the substrates (11, 21), the gallium (19) is mixed with a metal (28) that forms a refractory intermetallic phase with gallium, this forming a firm connection between the substrates. The method can be especially utilized for cubic integration.
    Type: Grant
    Filed: November 13, 1995
    Date of Patent: May 6, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Werner Pamler, Siegfried Schwarzl