Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: A compact magnetic recording head is provided. The recording head includes a write pole and a substantially planar yoke, which is coupled to the write pole. The yoke is configured to support a substantially single vortex configuration of magnetization.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: A method for synchronizing writing to a bit patterned media includes: reading bits from skipped blocks on the bit patterned media, using timing of bits read from the skipped blocks to update a write clock, and writing request data to physical blocks on the bit patterned media, interleaved with the skipped blocks. An apparatus that operates in accordance with the method is also provided.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

Abstract: An apparatus comprises a waveguide, an optical transducer for coupling electromagnetic radiation from the waveguide to a point adjacent to an air bearing surface to heat a portion of a storage medium, and a first wire positioned adjacent to the air bearing surface, wherein current in the wire produces a magnetic field in the heated portion of the storage medium.

Abstract: A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.

Abstract: A method for synchronizing writing to a bit patterned media includes: reading bits from skipped blocks on the bit patterned media, using timing of bits read from the skipped blocks to update a write clock, and writing request data to physical blocks on the bit patterned media, interleaved with the skipped blocks. An apparatus that operates in accordance with the method is also provided.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A magnetic recording system is disclosed in which the magnetization dynamics of the write head and recording medium are highly damped. The system may comprise a perpendicular recording head having a write pole, and a recording medium including a hard magnetic recording layer and a soft magnetic underlayer (SUL). The increased magnetic damping in the write pole and SUL suppresses precessional motion of the respective magnetizations, leading to a reduction in transition jitter caused by spurious head field fluctuations. The damping may be increased by providing films or multilayer structures that are doped with rare earth or transition metal elements. Exchange coupled laminates of doped and undoped layers may optimize both the effective damping and write field in the recording system.

Abstract: An apparatus comprises a ring of magnetic material, a source for applying a setting magnetic field to the ring, and first and second electrodes for applying an electric current to the ring. A method of using the apparatus to write to a magnetic storage medium is also provided.

Abstract: A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.

Abstract: A magnetic device includes a write element having a write element tip that defines a medium confronting surface. The write element is operable to generate a first field at the medium confronting surface. A conductor is proximate the write element tip and first and second conductive leads are connected to the conductor and configured to deliver a current to the conductor to generate a second field that augments the first field. First and second side elements are disposed on opposite sides of the write element tip in a cross-track direction at the medium confronting surface. At least a portion of the first conductive lead is disposed adjacent the first side element on a side opposite the medium confronting surface, and at least a portion of the second conductive lead is disposed adjacent the second side element on a side opposite the medium confronting surface.

Abstract: A magnetoresistive memory element has a read module with a first pinned layer that has a magnetoresistance that is readable by a read current received from an external circuit. The element has a write module that receives a write current from the external circuit. A coupling module adjacent both the write module and the read module has a free layer that functions as a shared storage layer for both the read module and the write module. The shared storage layer receives spin torque from both the read module and the write module and has a magnetization that is rotatable by the write current.

Abstract: A system including a recording head that includes a magnetic pole and a field assist source positioned adjacent the magnetic pole. The system further includes a recording medium positioned adjacent the recording head. In one aspect, the recording medium includes a magnetic recording layer wherein the magnetic recording layer has a damping value in the range of about 0.01 to about 0.20. In another aspect, the magnetic pole applies a write field to the recording medium at an angle in the range of about 15 degrees to about 30 degrees from an anisotropic axis of the magnetic recording layer and the field assist source applies a write assist field substantially in a plane perpendicular to the anisotropic axis of the magnetic recording layer. In another aspect, the field assist source has a spatial extent of about 12 nm to about 30 nm.