Patents by Inventor Wilfried E. A. Haensch

Wilfried E. A. Haensch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
    Patent number: 6815296
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Grant
    Filed: September 11, 2003
    Date of Patent: November 9, 2004
    Assignee: International Business Machines Corporation
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein I. Hanafi
  • Method to control device threshold of SOI MOSFET's
    Patent number: 6812527
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided in which an implanted back-gate is formed into a Si-containing layer of an SOI wafer. The implanted back-gate thus formed is capable of controlling the threshold voltage of a polysilicon-containing front-gate which is formed over a portion of the implanted back-gate region. The implanted back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: November 2, 2004
    Assignee: International Business Machines Corporation
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein I. Hanafi
  • Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
    Publication number: 20040046208
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Application
    Filed: September 11, 2003
    Publication date: March 11, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein T. Hanafi
  • Method to control device threshold of SOI MOSFET'S
    Publication number: 20040046207
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided in which an implanted back-gate is formed into a Si-containing layer of an SOI wafer. The implanted back-gate thus formed is capable of controlling the threshold voltage of a polysilicon-containing front-gate which is formed over a portion of the implanted back-gate region. The implanted back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Application
    Filed: September 5, 2002
    Publication date: March 11, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein I. Hanafi
  • Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
    Patent number: 6664598
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: December 16, 2003
    Assignee: International Business Machines Corporation
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein I. Hanafi