Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses, such that a total refractive power of each group of lenses is one of a negative refractive power and a positive refractive power; and wherein a refractive power of each lens of the fourth group of lenses is equal to or greater than 0. A lens of the third group of lenses which is disposed directly adjacent to a lens of the fourth group of lenses may have a concave surface facing towards the second object.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements arranged along an optical axis and designed for imaging an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio. The optical elements include at least one concave mirror. The optical elements are designed to provide an image-side numerical aperture NA>0.6 in a large effective image field having a maximum image field height Y?>25 mm. A compact, low mass projection objective enabling high throughput of exposed substrates is thereby obtained.

Abstract: An optical system (10), in particular a projection objective (12), for microlithography, has an optical axis and at least one optical correction arrangement (44), which has a first optical correction element (48) and at least one second optical correction element, wherein the first correction element is provided with a first aspherical surface contour, and wherein the second correction element is provided with a second aspherical surface contour, wherein the first surface contour and the second surface contour add up at least approximately to zero, wherein the correction arrangement (44) has at least one drive for movement of at least one of the two correction elements. In this case, at least one of the two correction elements can rotate about a rotation axis which is at least approximately parallel to the optical axis, and the at least one drive is a rotary drive for rotation of one or both of the correction elements about the rotation axis.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A photolithographic reduction projection catadioptric objective includes a first optical group having an even number of at least four mirrors and having a positive overall magnifying power, and a second substantially refractive optical group more image forward than the first optical group having a number of lenses. The second optical group has a negative overall magnifying power for providing image reduction. The first optical group provides compensative aberrative correction for the second optical group. The objective forms an image with a numerical aperture of at least substantially 0.65, and preferably greater than 0.70 or still more preferably greater than 0.75.

Abstract: A projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, and has a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth ??>10 pm around a central operating wavelength ?>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate.

Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: Projection objectives, as well as related components, systems and methods, are disclosed. In general, a projection objective is configured to image radiation from an object plane to an image plane. A projection objective can include a plurality of optical elements along the optical axis. The plurality of optical elements can include a group of optical elements and a last optical element which is closest to the image plane, and a positioning device configured to move the last optical element relative to the image plane. Typically, a projection objective is configured to be used in a microlithography projection exposure machine.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: The disclosure provides projection objectives which may be used in a microlithographic projection exposure apparatus to expose a radiation-sensitive substrate arranged in the region of an image surface of the projection objective with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective. The disclosure also provides projection exposure apparatus which include such projection objectives, as well as related components and methods.

Abstract: An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.