Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes eight mirrors. The light path is provided via the eight mirrors, and is free of obscuration.

Abstract: An optical system of a microlithographic exposure apparatus comprises at least one optical element (L1 to L16, 15, 16, 24) having a locally varying birefringence direction distribution that is caused by stress-induced birefringence and is at least substantially rotationally symmetrical. At least one birefringent correcting element (K1, K2; K?) is made of a crystal having a location independent birefringence direction distribution that is at least substantially rotationally symmetrical. The crystal has a crystal lattice orientation that is oriented such that its birefringence direction distribution is at least substantially perpendicular to the locally varying birefringence direction distribution of the at least one optical element (L1 to L16, 15, 16, 24).

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, and a projection system configured to project the beam of radiation. The lithographic apparatus also includes a cooling system that is arranged to pass gas through the interior of the projection system such that the throughput of gas through the interior of the projection system is greater than 100 liters of gas per hour.

Abstract: There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.

Abstract: A projection objective for microlithography for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective has at least one polarization splitter device that is operated only once in transmission or reflection. By using this device, polarization-dependent differences in the intensity and response of the light passing through the objective, which lead to a worsening of the imaging quality of the projection objective, can largely be avoided.

Abstract: A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: A catadioptric projection objective for projecting a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, having: a first objective part for projecting an object field lying in the object plane into a first real intermediate image; a second objective part for generating a second real intermediate image with the radiation coming from the first objective part; a third objective part for generating a third real intermediate image with the radiation coming from the second objective part; and a fourth objective part for projecting the third real intermediate image into the image plane.

Abstract: An optical system of a microlithographic exposure apparatus comprises at least one optical element (L1 to L16, 15, 16, 24) having a locally varying birefringence direction distribution that is caused by stress-induced birefringence and is at least substantially rotationally symmetrical. At least one birefringent correcting element (K1, K2; K?) is made of a crystal having a location independent birefringence direction distribution that is at least substantially rotationally symmetrical. The crystal has a crystal lattice orientation that is oriented such that its birefringence direction distribution is at least substantially perpendicular to the locally varying birefringence direction distribution of the at least one optical element (L1 to L16, 15, 16, 24).

Abstract: A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Abstract: A method of adjusting a projection objective permits the projection objective to be adjusted between an immersion configuration and a dry configuration with few interventions in the system, and therefore to be used optionally as an immersion objective or as a dry objective. The projection objective has a multiplicity of optical elements which are arranged along an optical axis of the projection objective, the optical elements comprising a first group of optical elements following the object plane and a last optical element following the first group, arranged next to the image plane and defining an exit surface of the projection objective which is arranged at a working distance from the image plane. The last optical element is substantially without refracting power and has no curvature or only slight curvature.

Abstract: An illumination system for a microlithographic projection exposure apparatus comprises a masking device and a masking objective which projects the masking device onto an image plane. The illumination system further includes an optical correction element having a surface that is either aspherically shaped or supports diffractive structures that have at least substantially the effect of an aspherical surface. This surface is arranged at least approximately in a field plane which precedes the image plane of the masking objective The aspherically acting surface is designed such that a principal ray distribution generated by the illumination system in the image plane matches a principal ray distribution required by a projection objective.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses, such that a total refractive power of each group of lenses is one of a negative refractive power and a positive refractive power; and wherein a refractive power of each lens of the fourth group of lenses is equal to or greater than 0. A lens of the third group of lenses which is disposed directly adjacent to a lens of the fourth group of lenses may have a concave surface facing towards the second object.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ? i = 1 k ? ? ? i ? ? V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, ?i is a refractive power in mm?1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements arranged along an optical axis and designed for imaging an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio. The optical elements include at least one concave mirror. The optical elements are designed to provide an image-side numerical aperture NA>0.6 in a large effective image field having a maximum image field height Y?>25 mm. A compact, low mass projection objective enabling high throughput of exposed substrates is thereby obtained.

Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A projection objective for microlithography for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective has at least one polarization splitter device that is operated only once in transmission or reflection. By using this device, polarization-dependent differences in the intensity and response of the light passing through the objective, which lead to a worsening of the imaging quality of the projection objective, can largely be avoided.

Abstract: A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.

Abstract: A method of adjusting a projection objective permits the projection objective to be adjusted between an immersion configuration and a dry configuration with few interventions in the system, and therefore to be used optionally as an immersion objective or as a dry objective. The projection objective has a multiplicity of optical elements which are arranged along an optical axis of the projection objective, the optical elements comprising a first group of optical elements following the object plane and a last optical element following the first group, arranged next to the image plane and defining an exit surface of the projection objective which is arranged at a working distance from the image plane. The last optical element is substantially without refracting power and has no curvature or only slight curvature.