Abstract: Described herein are durable coatings, i.e. for medical devices, and methods of forming the coatings.

Abstract: A system and method for connecting a removable counterweight system to a crane including a lower assembly adapted to be connected to the counterweight system, an upper assembly adapted to be mounted to the crane, and a latch block assembly mounted to the upper assembly. The latch block assembly includes a plurality of blocks cooperating together to form a central counterbore for receiving a stud therein. The blocks are mounted within the upper assembly by at least one axle to allow for rotation of the blocks. A distal end of the stud is removably connected to the latch block assembly to attach the counterweight system to the crane.

Abstract: A mobile scanner includes a base, an articulating boom assembly, a scanning assembly, and a boom-power system. The articulating boom assembly includes a proximal vertical boom section pivotably secured to the base; a distal vertical boom section; and an intermediate horizontal boom section disposed between the proximal vertical boom section and the proximal vertical boom section. The articulating boom assembly forms a general inverted U-shape when in a deployed position, so as to present an opening therethrough for the passing of an object to be scanned. The scanning assembly is disposed at least in part on the distal vertical boom section for scanning the object in the opening. The boom-power system is configured to place the articulating boom assembly into the deployed position. The articulating boom assembly is configured to remain in the deployed position without the boom-power system keeping the articulating boom assembly in the deployed position.

Abstract: A mobile scanner includes a base, an articulating boom assembly, a scanning assembly, and a boom-power system. The articulating boom assembly includes a proximal vertical boom section pivotably secured to the base; a distal vertical boom section; and an intermediate horizontal boom section disposed between the proximal vertical boom section and the proximal vertical boom section. The articulating boom assembly forms a general inverted U-shape when in a deployed position, so as to present an opening therethrough for the passing of an object to be scanned. The scanning assembly is disposed at least in part on the distal vertical boom section for scanning the object in the opening. The boom-power system is configured to place the articulating boom assembly into the deployed position. The articulating boom assembly is configured to remain in the deployed position without the boom-power system keeping the articulating boom assembly in the deployed position.

Abstract: The present disclosure relates generally to systems and techniques for applying color adjustments to a display. In certain embodiments, the color adjustment techniques may be employed to transition current color correction values, which are based on a previously detected temperature of the display, to target correction values, which are based on a presently detected temperature of the display. Adjustment increments for each color channel of the display may be determined based on the color channel that has the largest difference between the current color correction value and the target color correction value. In particular, the number of adjustment steps may be determined so that the adjustment increment for each channel is less than or equal to a maximum adjustment increment.

Abstract: A boom system includes a boom turret, a brake for preventing rotational movement of the boom turret, and a controller for actuating the brake. The brake prevents movement of the turret when the turret is subject to rotational loading below a torque threshold and allows rotational movement of the turret when the turret is subject to rotational loading above the torque threshold. The controller dynamically adjusts the torque threshold in response to changes in the position of the boom during operation of the boom system, including applying a lower torque threshold when the boom is in a first position and applying a higher torque threshold when the boom is in a second position.

Abstract: The invention relates to a method for manufacturing an RF filter comprising several resonator cavities and an RF filter manufactured by the method. The resonator cavities are formed into shape from a copper plate in a first manufacturing phase. In a second manufacturing phase the formed resonator cavities are inserted or integrated into a chassis material of the RF filter.

Abstract: A load guide for securing a load relative to a boom includes a base secured to the boom and a retractable arm assembly attached to the base. The base presents a front portion that is proximate a load supported by the boom. The arm assembly includes a pair of load-securing arms movably connected to the load guide base, each of the arms being movable between an operative position and a retracted position, wherein moving the arms from the operative position to the retracted position includes rotating each of the arms toward the other arm, and further includes translational movement of each of the arms away from the front portion of the load guide base.

Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Abstract: A boom system includes a boom turret, a brake for preventing rotational movement of the boom turret, and a controller for actuating the brake. The brake prevents movement of the turret when the turret is subject to rotational loading below a torque threshold and allows rotational movement of the turret when the turret is subject to rotational loading above the torque threshold. The controller dynamically adjusts the torque threshold in response to changes in the position of the boom during operation of the boom system, including applying a lower torque threshold when the boom is in a first position and applying a higher torque threshold when the boom is in a second position.

Abstract: In a third-person shooter video game, the viewing perspective is smoothly transitioned between an “explorer” viewpoint and a “ready” viewpoint as game conditions change. In the “explorer” viewpoint, scenes are depicted from a camera positioned behind and removed from a character. The explorer viewpoint offers a wide angle of view of the surrounding combat area, enabling the game player to scout the terrain. In the “ready” viewpoint, scenes are depicted from the camera as it is repositioned close to the character. The ready viewpoint provides a narrower angle of view to facilitate better aiming when the character is engaged in armed combat. The transition between the explorer and ready viewpoints tracks a non-linear path.

Abstract: A load guide for securing a load relative to a boom includes a base secured to the boom and a retractable arm assembly attached to the base. The base presents a front portion that is proximate a load supported by the boom. The arm assembly includes a pair of load-securing arms movably connected to the load guide base, each of the arms being movable between an operative position and a retracted position, wherein moving the arms from the operative position to the retracted position includes rotating each of the arms toward the other arm, and further includes translational movement of each of the arms away from the front portion of the load guide base.

Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer, The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Abstract: The present disclosure relates generally to systems and techniques for applying color adjustments to a display. In certain embodiments, the color adjustment techniques may be employed to transition current color correction values, which are based on a previously detected temperature of the display, to target correction values, which are based on a presently detected temperature of the display. Adjustment increments for each color channel of the display may be determined based on the color channel that has the largest difference between the current color correction value and the target color correction value. In particular, the number of adjustment steps may be determined so that the adjustment increment for each channel is less than or equal to a maximum adjustment increment.

Abstract: The invention relates to a method for manufacturing an RF filter comprising several resonator cavities and an RF filter manufactured by the method. The resonator cavities are formed into shape from a copper plate in a first manufacturing phase. In a second manufacturing phase the formed resonator cavities are inserted or integrated into a chassis material of the RF filter.

Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Abstract: An additive cartridge for dispersing an additive within a filter housing is provided. The additive cartridge includes an additive cartridge housing having a peripheral wall, the additive cartridge housing defining first interior area and a second interior area being divided by a first wall. A first unidirectional fluid path is disposed adjacent the second end, the first fluid path defining a flow path from the second interior area. A first biasing member being made from a shape-memory alloy disposed in the second interior area adjacent the first end, the shape memory alloy moving between a first position and a second position in response to a change in temperature. A first piston member is movably disposed within the second interior area and coupled to the first biasing member, the first piston member defining a dispensing chamber within the second interior area.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.