Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

Abstract: Polishing pads with grooved foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a pattern of grooves disposed therein. A continuous polishing surface layer is attached to the pattern of grooves of the foundation layer. In another example, a polishing pad for polishing a substrate includes a foundation layer with a surface having a pattern of protrusions disposed thereon. Each protrusion has a top surface and sidewalls. A non-continuous polishing surface layer is attached to the foundation layer and includes discrete portions. Each discrete portion is attached to the top surface of a corresponding one of the protrusions of the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a grooved foundation layer are also described.

Abstract: Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.

Abstract: Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.

Abstract: Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described.

Abstract: Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.

Abstract: Polishing pads with alignment marks are described. Methods of fabricating polishing pads with alignment marks are also described.

Abstract: Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.

Abstract: Polishing pads with multi-modal distributions of pore diameters are described. Methods of fabricating polishing pads with multi-modal distributions of pore diameters are also described.

Abstract: Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.

Abstract: Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: A method of forming a chemical mechanical polishing pad includes providing a first reactant including an isocyanate functional polyurethane prepolymer at a temperature above about 60° C., providing a second reactant including a diamine at a temperature above about 100° C., impingement mixing the first reactant and the second reactant within an impingement mixer to begin formation of a polyurea polyurethane elastomer, wherein the mixing is at a ratio of the first reactant to the second reactant of about 3:1 to about 6:1, casting the polyurea polyurethane elastomer that is formed from the mixed first and second reactants; and forming the polyurea polyurethane elastomer into chemical mechanical polishing pad dimensions. The polyurea polyurethane elastomer may further be provided with surface grooves and can be used as a single layer pad or formed into various stacked pad arrangements.

Abstract: A polishing pad is attachable to a platen to minimize trapped air and polishing fluid intrusion. The pad comprises a polishing layer having a polishing surface on a first end of the pad and a polishing layer peripheral edge extending away from the polishing surface; a gas impermeable attaching layer defines an attachment surface for securing the pad to the platen at an opposed second end of the pad, the attaching layer having an attaching layer peripheral edge extending away from the attachment surface, wherein a peripheral edge of the pad extends from the polishing surface to the attaching surface formed of the peripheral edges of each pad layer; and a plurality of openings extending through the attaching layer. During pad attachment, trapped air flows through the attaching layer openings and out of the peripheral edge of the pad at a position spaced from the attaching layer peripheral edge.

Abstract: Provided is a process for preparing a polyurethane urea pad adapted to polish a microelectronic substrate. The pad includes at least partially gas-filled cells substantially uniformly distributed throughout. The process is s follows: forming a reaction mixture by adding to a mixing unit the following mixture components: (a) a polyisocyanate, (b) an amine-containing material, (c) a blowing agent, and (d) optionally, a hydroxyl-containing material; mechanically mixing the reaction mixture at a pressure of less than 20 bar; dispensing the reaction mixture into an open mold; and curing the reaction mixture to form a polyurethane urea, wherein the at least partially gas-filled cells comprise carbon dioxide produced by the reaction of the mixture components.

Abstract: The present invention relates to an article for altering a surface of a workpiece, or a polishing pad having a window. In particular, the polishing pad includes a polyurethane urea material wherein the polyurethane urea material contains cells which are at least partially filled with gas. The polyurethane urea material can be prepared by combining polyisocyanate and/or polyurethane prepolymer, hydroxyl-containing material, amine-containing material and blowing agent. The polishing pad according to the present invention is useful for polishing articles, and is especially useful for chemical mechanical polishing or planarization of microelectronic and optical electronic devices such as but not limited to semiconductor wafers. The window of the polishing pad is at least partially transparent and thus, can be particularly useful with polishing or planarizing tools that are equipped with through-the-platen wafer metrology.

Abstract: A polishing pad is described as comprising, (a) particulate polymer which can be chosen from particulate thermoplastic polymer (e.g., particulate thermoplastic polyurethane), particulate crosslinked polymer (e.g., particulate crosslinked polyurethane and/or particulate crosslinked polyepoxide) and mixtures thereof; and (b) organic polymer binder (e.g., polyurethane binder and/or polyepoxide binder), which can bind the particulate polymer together, wherein said organic polymer binder can be prepared in-situ. The particulate polymer and organic polymer binder can be distributed substantially across the work surface the polishing pad, and the pad can have a percent pore volume of from 2 percent by volume to 50 percent by volume, based on the total volume of said polishing pad.

Abstract: The present invention relates to a polishing pad. In particular, the polishing pad of the present invention comprises a sublayer, a middle layer, and a top layer which can function as a polishing layer. The polishing pad of the present invention is useful for polishing articles and particularly useful for chemical mechanical polishing or planarization of a microelectronic device, such as a semiconductor wafer.

Abstract: The present invention relates to a polishing pad. In particular, the polishing pad of the present invention can include a window area. The window area can be formed in the pad using a cast-in-place process. The polishing pad of the present invention can be useful for polishing articles and can be especially useful for chemical mechanical polishing or planarization of a microelectronic device, such as a semiconductor wafer. The window area of the polishing pad of the present invention can be particularly useful for polishing or planarizing tools that are equipped with through-the-platen wafer metrology.