Abstract: To control the temperature sensitivity of a ferroelectric microwave device, a microwave waveguide in the device is loaded with a modified ferroelecc material of reduced grain size less than 100 nm, preferably about 50 nm. The electrical properties of this material are less sensitive to temperature change. Thus, when a dc bias voltage is applied across the ferroelectric to tune the dielectric constant, changes in temperature will have a minimal effect on the desired tuning of the device.

Abstract: Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the general formula A.sub.2 MeSbO.sub.6 wherein A is either barium (Ba) or strontium (Sr) and Me is a non-magnetic ion selected from the group consisting of scandium (Sc), indium (In) and gallium (Ga) have been prepared and included in high critical temperature thin film superconductor structures.

Abstract: A voltage-variable ceramic capacitance device which has a plurality of las in a matching lattice structure and which possesses a symmetric voltage characteristic and a determinable voltage breakdown and has a high resistance to overbiasing or reverse biasing from an applied voltage. The device consists of a carrier substrate layer, a high temperature superconducting metallic layer deposited on the substrate, a thin film ferroelectric deposited on the metallic layer, and a plurality of metallic conductive means disposed on the thin film ferroelectric which are placed in electrical contact with RF transmission lines in tuning devices.

Abstract: A piezoelectrically controlled superconducting switch is provided for use in superconducting devices and piezoelectric devices. This switch includes a substrate, a superconductor which is bonded to the substrate, and a piezoelectric subassembly which has a load applicator and voltage source for straining the superconductor and for changing its superconductor curve of resistivity versus temperature.

Abstract: Uniform films deposited on substrates by laser ablation of targets are inased in size by configuring irradiated target areas as curves rather than flat surfaces. Since material ejected from the target area leaves in a direction normal to the target area, a curved surface results in the material following a trajectory which is at an acute angle to the surface of the substrate being coated. This results in a cone of ejected material which diverges, thus covering an area larger than the irradiated target area. The irradiated target area may be convex, concave or be comprised of a plurality of juxtaposed convex surfaces.