Abstract: A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Abstract: A semiconductor structure including a doped semiconductor substrate defining a surface. A buffer layer of epitaxial semiconductor material overlies the substrate surface, the buffer layer having a relatively higher dopant concentration than the substrate and being virtually free from oxygen precipitation. A layer of intrinsic semiconductor material overlies the buffer layer, and a device layer of epitaxial semiconductor material is situated on the intrinsic layer. The device layer is formed to have a relatively lower dopant concentration than the first layer. Isolation regions extend from a surface of the device layer into the buffer layer for forming an electrically isolated device region in the device layer. At least one active device is formed in the isolated device region.

Abstract: An energy absorbing assembly in which a number of spaced, metallic plate-like elements are coupled together by end blocks and spacers clamped together so that the elements are generally parallel with each other and are cantilevered from the upper ends thereof. In one embodiment, the upper ends of the elements are rigidly coupled to a floor beam and the cantilevered ends are coupled by a plate-like strut to an adjacent column to which the floor beam is pivotally mounted. A number of rollers permit free movement of the lower ends of the plates relative to the upper ends thereof. In a second embodiment, the assembly has elements which are bow tie-shaped plates, and the upper ends of the elements are rigidly secured to a horizontal floor beam. Diagonal braces are secured at opposed lower ends of the elements, and the lower ends of the braces extend downwardly and away from each other and are secured to the next floor beam therebelow.

Abstract: There is disclosed transparent, abrasion resistant coating compositions comprising a colloidal dispersion of a water insoluble dispersant in a water-alcohol solution of the partial condensate of silanol wherein the dispersant comprises metals, alloys, salts, oxides and hydroxides thereof.

Abstract: There is disclosed transparent, abrasion resistant coating compositions comprising a colloidal dispersion of a water insoluble dispersant in a water-alcohol solution of the partial condensate of silanol wherein the dispersant comprises metals, alloys, salts, oxides and hydroxides thereof.

Abstract: Articles coated with transparent, abrasion resistant compositions comprising a colloidal dispersion of a water insoluble dispersant in a water-alcohol solution of the partial condensate of silanol wherein the dispersant comprises metals, alloys and salts thereof.

Abstract: There is disclosed transparent, abrasion resistant coating compositions comprising a colloidal dispersion of a water insoluble dispersant in a water-alcohol solution of the partial condensate of silanol wherein the dispersant comprises metals, alloys and salts thereof.

Abstract: A cured transparent, abrasion resistant coating on at least one surface of a substrate. The coating composition comprises an effective abrasion resisting amount of a colloidal dispersion containing colloidal antimony oxide and colloidal silica in a weight ratio of less than or equal to about 30:70, in a water-alcohol solution of the partial condensate of R(Si(OH).sub.3) wherein R is an organic radical.

Abstract: A radiation hardened CMOS formed by applying a radiation hard gate oxide layer on a silicon substrate, applying silicon doped aluminum gates on the gate oxide, and by ion implanting and annealing source and drain regions using said gates as masks at a temperature of or below 500 degrees centigrade. Using an N.sup.- type substrate, a P.sup.+ guard ring is formed at the interface of the P.sup.- well of the N channel MOS device and the N.sup.- substrate before the formation of the gate oxide.

Abstract: A coating composition which forms an improved transparent, abrasion resistant coating upon curing. The coating composition comprises an effective abrasion resisting amount of a colloidal dispersion containing colloidal antimony oxide and colloidal silica in a weight ratio of less than or equal to about 30:70, in a water-alcohol solution of the partial condensate of R(Si(OH).sub.3) wherein R is an organic radical.

Abstract: A radiation hardened CMOS formed by applying a radiation hard gate oxide layer on a silicon substrate, by applying silicon doped aluminum gates on the gate oxide, and by ion implanting and annealing source and drain regions using said gates as masks at a temperature of or below 500 degrees centigrade. Using an N.sup.- type substrate, a P.sup.+ guard ring is formed at the interface of the P.sup.- well of the N channel MOS device and the N.sup.- substrate before the formation of the gate oxide.

Abstract: Apparatus to test the divergence of a beam from a laser includes a beam expander, aperture-forming means, an off-axis parabolic mirror positioned to image the beam from the aperture in a Fraunhofer plane, and a vidicon camera to translate the spatial distribution of light energy along a horizontal line in the Fraunhofer plane to an electrical signal indicating the difference between a light energy peak and a light energy valley. The aperture-forming means includes a V-shaped slit which is movable relative to a member with a horizontal slit so that the aperture formed can be changed from a single aperture to two apertures having an increasing separation. The amount of separation of the apertures when the electrical signal goes through zero is an inverse measure of the divergence of the light beam from the laser under test.

Abstract: A circuit having an input terminal connected to one input of a NOR gate through three cascaded IGFET inverters and connected directly to the other input of the NOR gate for producing an output pulse in response to an input signal going from a first voltage level to a second voltage level. The output pulse has a width which is a function of the time delay imparted by the high resistance device of two unbalanced IGFET inverters and the parasitic capacitors at the output of each of the unbalanced inverters.

Abstract: Upon storage, the activity of immobilized enzymes slowly decreases in the presence of moisture. This decrease in activity can be reduced by a significant extent by treating the immobilized enzymes in the presence of moisture with a long chain quaternary ammonium compound.