Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.

Abstract: Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming a ferro-electric material between the top plate and the bottom plate. The method further includes encapsulating the barrier layer, top plate, bottom plate and ferro-electric material with an encapsulating material. The method further includes forming contacts to the top plate and bottom plate, through the encapsulating material. At least the contact to the top plate and a contact to a diffusion of the CMOS structure are in electrical connection through a common wire.

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

Abstract: A system includes a number of electrical switching apparatus having separable contacts, an operating mechanism structured to open and close the separable contacts, a trip mechanism cooperating with the operating mechanism to trip open the separable contacts, a test circuit structured to test the trip mechanism and determine a failure to protect condition thereof, and a communication circuit structured to communicate the failure to protect condition. The system also includes an electrical distribution panel having a housing housing the number of electrical switching apparatus, and a communication interface structured to receive the failure to protect condition from the communication circuit and annunciate the failure to protect condition.

Abstract: A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

Abstract: The invention relates to a process for preparing lube oil basestocks from lube oil boiling range feeds. More particularly, the present invention is directed toward a process wherein a wax containing feed is solvent dewaxed to produce at least a partially dewaxed lube oil boiling range stream, which is hydrodewaxed to produce a first lube basestock. The first lube basestock is added to an independently selected second lube basestock and additives to make a lubricating oil.

Abstract: A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

Abstract: Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices.

Abstract: A system and method for screening inter-modal shipping containers for the presence of weapons-of-mass-destruction, such as chemical-warfare agents, biological-warfare agents, radiological materials, nuclear material, or explosives, is disclosed.

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

Abstract: A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. Specifically, the method includes providing a substrate including a wiring level, the wiring level comprising at least one conductive interconnect formed in a dielectric layer; selectively removing a portion of the dielectric layer to recess the dielectric layer below an upper surface of the at least one conductive interconnect; forming a dielectric stack upon the at least one conductive interconnect and the recessed dielectric layer; and forming a metal-insulator-metal (MIM) capacitor on the dielectric stack. The MIM capacitor includes a bottom plate electrode, a dielectric and a top plate electrode.

Abstract: Compositions and methods for the detection, prevention, or treatment of anthrax or other infectious diseases. In one aspect, the present invention provides methods for immunizing humans or animals against Bacillus anthracis or other capsulated pathogens. The methods include administering a capsular polypeptide of a pathogen of interest and a CD40 agonist to a human or animal. The capsular polypeptide or the CD40 agonist is administered in such an amount or frequency that an immunoprotective response can be elicited in the human or animal against the pathogen of interest. In another aspect, the present invention provides methods of using passive immunization with anti-capsular polypeptide antibodies to prevent or treat infections caused by Bacillus anthracis or other pathogens. In yet another aspect, the present invention provides methods useful for diagnosis of anthrax by detection of capsular polypeptide in serum or other biological samples.

Abstract: A circuit breaker includes separable contacts, an operating mechanism structured to open and close the separable contacts, and a trip circuit including a trip coil and a fault detector. The fault detector energizes the trip coil to cause the operating mechanism to open the separable contacts. A test circuit is structured to test the trip coil and determine an open circuit condition thereof. An annunciation circuit is structured to annunciate the open circuit condition of the trip coil.

Abstract: A system includes a number of electrical switching apparatus having separable contacts, an operating mechanism structured to open and close the separable contacts, a trip mechanism cooperating with the operating mechanism to trip open the separable contacts, a test circuit structured to test the trip mechanism and determine a failure to protect condition thereof, and a communication circuit structured to communicate the failure to protect condition. The system also includes an electrical distribution panel having a housing housing the number of electrical switching apparatus, and a communication interface structured to receive the failure to protect condition from the communication circuit and annunciate the failure to protect condition.

Abstract: In some embodiments, the present disclosure provides methods for stimulating a subject's immune system. Particular methods provide a tumor specific immune response by injecting a tumor with a magnetorheological fluid and applying a magnetic field to the tumor. The immune response can be used to treat disseminated tumors or metastatic cells. Further methods induce a general immune response, such as by treating a section of tissue, such as healthy tissue, with a magnetorheological fluid and applying a magnetic field to the treated tissue. The immune response can be used to treat illness or disease or to enhance the effect of a therapeutic agent. In particular examples, the disclosed methods are used to enhance the effect of immuno stimulants. Also provided are methods for causing necrosis of a cell mass, such as a tumor, by injecting a magnetorheological fluid into a section of tissue and applying a magnetic field to the tissue.

Abstract: A process for producing lube oil basestocks wherein a wax containing lube oil boiling range feedstream is converted into a basestock suitable for use in motor oil applications by contacting it with a hydrodewaxing catalyst containing a medium pore molecular sieve having deposited thereon an active metal oxide and at least one hydrogenation metal selected from the Group VIII and Group VIB metals.

Abstract: A method is provided for fabricating a microelectronic chip which includes a passive device such, as an inductor, overlying an air gap. In such method, a plurality of front-end-of-line (“FEOL”) devices are formed in a semiconductor region of the microelectronic chip, and a plurality of stacked interlevel dielectric (“ILD”) layers are formed to overlie the plurality of FEOL devices, the plurality of stacked ILD layers including a first ILD layer and a second ILD layer, where the second ILD layer is resistant to attack by a first etchant which attacks the first ILD layer. A passive device is formed to overlie at least the first ILD layer. Using the first etchant, a portion of the first ILD layer in registration with the passive device is removed to form an air gap which underlies the passive device in registration with the passive device.