Abstract: An adsorbent having a composition comprising at least 90% chabazite where the chabazite is a single phase chabazite having an Si/Al ratio of 1.2 to 1.8, the chabazite includes a mixture of at least two types of cations, and each of the at least two types of cations are in a molar ratio relative to Al of at least 0.05.

Abstract: Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Abstract: The disclosure relates to new compositions comprising an, B12FxH12?x? anion that may be prepared chemically or electrochemically by oxidation of B12FxH12?x2? salts. This anion can be generated electrochemically in a voltammetry experiment, or by chemically by treatment of the (2?) anions with powerful oxidants such as XeF2 or NO2(+) salts. The new compositions can be used as 1 electron chemical oxidants and in electrochemical cells such as lithium ion batteries where their formation at elevated potential can serve to limit the upper limit of voltage during the overcharge of such a cell.

Abstract: An adsorbent having a composition comprising at least 90% chabazite where the chabazite is a single phase chabazite having an Si/Al ratio of 1.2 to 1.8, the chabazite includes a mixture of at least two types of cations, and each of the at least two types of cations are in a molar ratio relative to Al of at least 0.05.

Abstract: A method for preparing an adsorbent is disclosed that includes mixing an NaY zeolite, aqueous Al(OH)3, and aqueous KOH, and then heating the resultant mixture for an allotted amount of time to achieve a composition comprising at least 90% single phase chabazite having an Si/Al ratio of 1.0 to 2.2.

Abstract: A method of separating oxygen from an oxygen-containing fluid stream is disclosed, the method including the step of contacting the oxygen-containing fluid stream with an oxygen-selective zeolite adsorbent comprising at least 90% chabazite, wherein the chabazite is a single phase chabazite having an Si/Al ratio of 1.2 to 1.8. The single phase chabazite may comprise a mixture of at least two types of cations.

Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

Abstract: Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing titanium nitride (TiN or TiNxOy) etch residue.

Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Abstract: Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH <4, preferably <3, more preferably <2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants.

Abstract: Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Abstract: Formulations for stripping titanium nitride (TiN or TiNxOy; x=0 to 1.3 and y=0 to 2) hard mask and removing titanium nitride etch residue are low pH (<4) comprise a weakly coordinating anion having negative charge highly dispersed throughout its structure, amine salt buffer, a non-oxidizing trace metal ion, a non-ambient trace oxidizer, and the remaining being solvent selected from the group consisting of water, sulfolane, dimethyl sulfide, lactic acid, glycol, and mixtures thereof. The formulations contain no hydrogen peroxide, and are exposed to air. Bifluoride, corrosion inhibitors, surfactants may be added to the formulations. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.

Abstract: Aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing titanium nitride(TiN or TiNxOy) etch residue.

Abstract: Condensable materials, such as but not limited to tungsten fluoride (WF6), can be used deposit films in a chemical vapor deposition (CVD) process. Described herein are methods to collect and reuse the condensable materials that are unreacted in the production process rather than treat these materials as waste. In one embodiment, when a condensable material, such as gaseous WF6, is not supplied to the CVD reactor, it is redirected to a recovery cabinet for capture.

Abstract: The over charge protection of a lithium ion cell is improved by using an electrolyte comprising at least one redox shuttle additive that comprises an in situ generated soluble oxidizer or oxidant to accelerate other forms of chemical overcharge protection. The oxidizer can be employed in combination with radical polymerization additives.

Abstract: The present invention relates to lithium secondary batteries comprising a negative electrode, a positive electrode, a separator and a lithium-based electrolyte carried in an aprotic solvent, and to the electrolyte compositions, and to methods for purifying battery active materials. The electrolyte comprises at least one solvent and a lithium salt of the formula: Li2B12FxH12-x-yZy where x+y is from 3 to 12, and x and y are independently from 0 to 12, and Z comprises at least one of Cl and Br.

Abstract: The disclosure relates to new compositions comprising an, B12FxH12-x? anion that may be prepared chemically or electrochemically by oxidation of B12FxH12-x2? salts. This anion can be generated electrochemically in a voltammetry experiment, or by chemically by treatment of the (2?) anions with powerful oxidants such as XeF2 or NO2(+) salts. The new compositions can be used as 1 electron chemical oxidants and in electrochemical cells such as lithium ion batteries where their fomation at elevated potential can serve to limit the upper limit of voltage during the overcharge of such a cell.

Abstract: An electrochemical device and a proton conducting medium for use in an electrochemical device having a proton conducting electrolyte comprising the formula: HaMbQ.nH2O where H is a proton, M is a cation, Q is the fluoroborate or fluoroheteroborate anion, n ranges from 0.01 to 1000, a ranges from 0.01 to 2 and b ranges from 0 to 2, a and b are chosen to render the formula electrically neutral, and when b is greater than 0, the ratio of b to a is less than 100 to 1.

Abstract: A process for fluorination of borohydride salts including providing a reaction medium comprising HF and a superacid. A borohydride salt compound is added to the reaction medium. The borohydride salt is reacted with the with the reaction medium under conditions to form a fluorinated borohydride salt. In addition, reactor vessels may be provided for reacting the HF, superacid additive and borohydride that are fabricated from materials resistant to superacid compositions.