Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: An optical modulator device includes a body portion operative to propagate an optical mode along a longitudinal axis of the body portion, the body portion comprising a first layer disposed on a second layer, wherein the first layer includes a first p-type doped region adjacent to a first n-type doped region along the longitudinal axis of the body portion, and the second layer includes a second n-type doped region disposed on the first p-type doped region and a second p-type doped region adjacent to the second n-type doped region along the longitudinal axis of the body portion, the second p-type doped region disposed on the first n-type doped region.

Abstract: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

Abstract: A mode-selective add/drop unit for a mode division de/multiplexing device includes an optical ADU waveguide adapted for coupling to an input optical waveguide. The optical ADU waveguide includes at least one region providing optical signal coupling between the ADU waveguide and a multi-mode waveguide; and, one or more phase matching regions for controlling a relative or absolute phase difference between an electromagnetic wave (EMW) carried in the ADU waveguide and the multi-mode waveguide. The mode-selective add/drop unit may further include a transition region connecting the coupling region and a phase matching region, wherein a shape of a transition region is governed by a polynomial function, exponential function, logarithmic function, trigonometric function or, any combination of these functions.

Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A method of implementing optical deflection switching includes directing a tuning operation at a specific region of coupled optical resonators coupled to an input port, a first output port and a second output port, the coupled optical resonator including a plurality of cascaded unit cells; wherein the tuning operation interrupts a resonant coupling between one or more of the unit cells of the coupled resonators so as to cause an input optical signal from the input port to be directed from the first output port to the second output port.

Abstract: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

Abstract: A transmission line and method for implementing includes a plurality of segments forming an electrical path and a continuous optical path passing through the segments. Discrete inductors are formed between and connect adjacent segments. The inductors are formed in a plurality of metal layers of an integrated circuit to balance capacitance of an optical modulator which includes the transmission line to achieve a characteristic impedance for the transmission line.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: An electricity generating assembly includes a first turbine having a first plurality of fan blades and a second turbine having a second plurality of fan blades. A first rotor is connected to the first turbine and rotatable with the first turbine. A second rotor is connected to the second turbine and is rotatable with the second turbine. The first and second turbines are rotatably connected to a shaft such that rotation of the first and second turbines cause rotation of the shaft, wherein the first and second turbines rotate in opposite directions.

Abstract: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

Abstract: A thermally switched Silicon-On-Insulator (SOI) photo electronic device includes a silicon layer including an optical waveguide and a silicide heating element horizontally adjacent to the waveguide. The waveguide has a refractive index that changes with heat applied to the waveguide.

Abstract: A electricity generating assembly includes a plurality of rotatable fan blades. A generator is connected to the plurality of fan blades to convert rotation of the fan blades into electricity. A plurality of shutters surround the plurality of fan blades. The plurality of shutters are movable between a first position in which said plurality of shutters are open to allow access to the plurality of fan blades and a second position in which the plurality of shutters are closed to prevent access to the plurality of fan blades. A motor is connected to the plurality of shutters to move the plurality of shutters between the first and second positions.

Abstract: An optical switch includes a plurality of optical interferometric structures is serially connected between at least one optical input node and two optical output nodes. A primary waveguide directly connects an optical input node and a first optical output node. A complementary waveguide, which is directly connected to a second optical output node, is evanescently coupled with the primary waveguide in a pair of optically coupled sections provided in each optical interferometric structure. Each optical interferometric structure also includes a pair of decoupled sections, which includes a primary decoupled section embedding a portion of the primary waveguide and a complementary decoupled section which includes a portion of the complementary waveguide. The complementary decoupled section is embedded in a phase tuning structure that allows modulation of the phase of the optical signal passing through.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A method of implementing optical deflection switching includes directing a tuning operation at a specific region of coupled optical resonators coupled to an input port, a first output port and a second output port, the coupled optical resonator including a plurality of cascaded unit cells; wherein the tuning operation interrupts a resonant coupling between one or more of the unit cells of the coupled resonators so as to cause an input optical signal from the input port to be directed from the first output port to the second output port.