Abstract: Disclosed is a fungicidal composition comprising (a) at least one compound selected from the compounds of Formula 1, including all geometric and stereoisomers, tautomers, A-oxides, and salts thereof, wherein E, L, J, A and T are as defined in the disclosure; and (b) at least one additional fungicidal compound. Also disclosed is a method for controlling plant diseases caused by fungal plant pathogens comprising applying to the plant or portion thereof, or to the plant seed, a fungicidally effective amount of a compound of Formula 1, an A-oxide, or salt thereof (e.g., as a component in the aforesaid composition). Also disclosed is a composition comprising: (a) at least one compound selected from the compounds of Formula 1 described above, A-oxides, and salts thereof; and at least one invertebrate pest control compound or agent.

Abstract: A novel system for providing for safe operation of railgear, that is, a set of guide wheels that allow road vehicles to travel on railroad tracks, based on the use of overload indicators installed on the suspension arm of each guide wheel to give operators a quick, visual representation of whether or not a guide wheel is overloaded.

Abstract: An improved safety system used to determine the present position of a car riding on railroad tracks that provides data to control signals, such as flashing lights, and crossing gates at railroad grade crossings in order to prevent accidents with vehicles or persons.

Abstract: The present disclosure relates to the identification of a subject that is affected with, or predisposed to, autism or to one or more autism spectrum disorders (ASD). The present disclosure includes methods related to the association of certain genetic markers with autism and/or ASD. More particularly, the present disclosure is related to methods and diagnostic tests for diagnosing or predicting ASD in an individual.

Abstract: The present disclosure relates to the identification of a subject that is affected with, or predisposed to, autism or to one or more autism spectrum disorders (ASD). The present disclosure includes methods related to the association of certain genetic markers with autism and/or ASD. More particularly, the present disclosure is related to methods and diagnostic tests for diagnosing or predicting ASD in an individual.

Abstract: An improved safety system used to determine the present position of road vehicles with rubber tires that are outfitted with railgear to be able to ride on railroad tracks that provides data to control signals, such as flashing lights, and crossing gates at railroad grade crossings in order to prevent accidents with vehicles or persons.

Abstract: An improved safety system used to determine the present position of a car riding on railroad tracks that provides data to control signals, such as flashing lights, and crossing gates at railroad grade crossings in order to prevent accidents with vehicles or persons.

Abstract: A novel system for providing for safe operation of railgear, that is, a set of guide wheels that allow road vehicles to travel on railroad tracks, based on the use of overload indicators installed on the suspension arm of each guide wheel to give operators a quick, visual representation of whether or not a guide wheel is overloaded.

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device writeability through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS through the array VCS driver.

Abstract: At least one method and system involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.

Abstract: Method, apparatus, and system for improving semiconductor device writeability at row/bit level through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS, wherein the first array supply voltage and the second array supply voltage are greater than the operational array supply voltage. By virtue of BTI, application of the first array supply voltage may lead to improved writeability of one or more cells of the device.

Abstract: At least one method and system disclosed herein involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device writeability through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS through the array VCS driver.

Abstract: Method, apparatus, and system for improving semiconductor device writeability at row/bit level through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS, wherein the first array supply voltage and the second array supply voltage are greater than the operational array supply voltage. By virtue of BTI, application of the first array supply voltage may lead to improved writeability of one or more cells of the device.

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device writeability through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS through the array VCS driver.

Abstract: At least one method and system disclosed herein involves performing a time-dependent dielectric breakdown (TDDB) test and a bias temperature instability (BTI) test on a device. A device having at least one transistor and at least one dielectric layer is provided. A test signal is provided for performing a TDDB test and a BTI test on the device. The TDDB test and the BTI test are performed substantially simultaneously on the device based upon the test signal. The data relating to a breakdown of the dielectric layer and at least one characteristic of the transistor based upon the TDDB test and the BTI test is acquired, stored, and/or transmitted.

Abstract: The present disclosure relates to the identification of a subject that is affected with, or predisposed to, autism or to one or more autism spectrum disorders (ASD). The present disclosure includes methods related to the association of certain genetic markers with autism and/or ASD. More particularly, the present disclosure is related to methods and diagnostic tests for diagnosing or predicting ASD in an individual.

Abstract: At least one method and system disclosed herein involves testing of integrated circuits. A device having at least one transistor and at least one dielectric layer is provided. A first voltage is provided during a first time period for performing a stress test upon the device. A second voltage is provided during a second time period for discharging at least a portion of the charge built-up as a result of the first voltage. The second voltage is of an opposite polarity of the first voltage. A sense function is provided during a third time period for determining a result of the stress test. Data relating to a breakdown of the dielectric layer based upon the result of the stress test is acquired, stored and/or transmitted.

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device yield and/or reliability through bias temperature instability (BTI). One device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line controls access to each pass gate of a first number of cells; a word line driver electrically connected to each word line; and a control line configured to provide an operational write voltage or a first write voltage to each word line through the word line driver. By virtue of BTI, application of the first write voltage may lead to improved stability of data desired to be read from one or more cells of the device.

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device yield and/or reliability through bias temperature instability (BTI). One device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line controls access to each pass gate of a first number of cells; a word line driver electrically connected to each word line; a row decoder configured to authorize or deauthorize a write voltage to each word line through the word line driver, wherein the write voltage is selected from an operational write voltage or a first write voltage; and a control line configured to provide an operational write voltage or a first write voltage to each word line authorized by the row decoder, wherein the first write voltage is greater than an operational write voltage.