Abstract: Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Abstract: Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: A system for managing a plurality of IRS-generated tax transcripts is provided. Each tax transcript may be populated with a plurality of tax data from a variety of sources, such as the plurality of tax forms provided to the IRS. The plurality of tax data may comprise a plurality of fixed data fields and a plurality of transaction events.

Abstract: A system for managing a plurality of IRS-generated tax transcripts is provided. Each tax transcript may be populated with a plurality of tax data from a variety of sources, such as the plurality of tax forms provided to the IRS. The plurality of tax data may comprise a plurality of fixed data fields and a plurality of transaction events.

Abstract: A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×103 ohm-centimeter (?-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1×1015 atoms per cubic centimeter (atoms/cc) to 5×1021 atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn).

Abstract: A ZnO bulk single crystal of the invention has n-type conductivity with a maximum resistivity of one (1) ohm-centimeter (?-cm). N-type conductivity is achieved through introduction of dopants in the formation of the crystal using a Bridgeman growth technique. The dopants can be a single species or combination of species from Group III, Group VII, Lanthanides, Actinides, Transition metals, or other element or combination of elements resulting in a net positive addition of carriers, i.e. free electrons, to the crystal. Dopant concentration ranges from 1×1015 to 5×1021 atoms/cc. The maximum resistivity at which doped ZnO will exhibit enhanced n-type behavior is one (1) ?-cm at room temperature, so dopant concentrations used to form the crystal are present in an amount that yields this result. The conductivity of the ZnO crystal can be tailored due to the general trend of increasing dopant concentration providing increasing conductivity. The crystal can be cut and polished to produce one or more wafers.

Abstract: A new diluted magnetic semiconductor-spintronics material and method for its production are disclosed. The material can be in bulk or thin film form. The material comprises zinc oxide (ZnO) which includes a transition element or a rare earth lanthanide, or both, in an amount sufficient to change the material from non-magnetic state to room temperature ferromagnetic state. The bulk crystal is grown by high pressure melt technique. A new method for growing transition metal doped ZnO thin films is presented. A metalorganic chemical vapor deposition (MOCVD) technique is used to grow thin films of transition metal doped ZnO and organic compounds have been used as source materials.

Abstract: A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×103 ohm-centimeter (?-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1×1015 atoms per cubic centimeter (atoms/cc) to 5×1021 atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn).