Abstract: A waveguide device for frequency mixing or conversion through birefringent phase matching, having two suspended horizontal waveguides with an air-filled horizontal nanoslot between them. The waveguides are formed of a material with a high nonlinear susceptibility, and one waveguide can be n-doped with the other waveguide slab being p-doped. The system can be tuned to operate at different frequencies by varying the nanoslot gap distance by electrostatically actuating the suspended air-clad waveguides.

Abstract: An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Abstract: An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Abstract: A change in mass of a microbridge in a mass sensor can be sensed by applying a time-varying amplitude modulated electrostatic force to excite the microbridge into resonance at the frequency of amplitude modulation. An optical energy is then transmitted at a wavelength close to a resonant wavelength of a Fabry-Perot microcavity, which is formed by etching a movable reflective mirror into a region of the microbridge and by etching a fixed reflective minor in a region spaced apart from the microbridge. The two mirrors are interconnected by an optical waveguide. The movable mirror and fixed mirror reflect the optical energy to a receiver, and a change in the Fabry-Perot microcavity's reflectivity is interferometrically determined. The change in reflectivity indicates a change in the microbridge's resonant frequency due to increased mass of the microbridge resulting from sorption of a target chemical by a layer of chemoselective material deposited on the microbridge.

Abstract: An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Abstract: Micro-opto-mechanical chemical sensors and methods for simultaneously detecting and discriminating between a variety of vapor-phase analytes. One embodiment of the sensor is a photonic microharp chemical sensor with an array of closely spaced microbridges, each differing slightly in length and coated with a different sorbent polymer. The microbridges can be excited photothermally, and the microbridges can be optically interrogated using microcavity interferometry. Other actuation methods include piezoelectric, piezoresistive, electrothermal, and magnetic. Other read-out techniques include using a lever arm and other interferometric techniques.

Abstract: An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Abstract: A system and method for encoding an analog input signal for optical transmission, including driving a voltage controlled oscillator with an analog input signal to produce a frequency modulated electrical signal having a frequency proportional to the amplitude of the input signal, and applying the frequency modulated electrical signal to a multiple quantum well modulating retroreflector. The retroreflector receives optical energy from a laser source and modulates the optical energy with the frequency modulated signal to produce an output optical signal.

Abstract: A sensor and a method for sensing a change in mass of a reflective microbeam in a sensor, the sensor having a reflective layer disposed on a substrate and spaced apart from the reflective microbeam. The microbeam receives amplitude modulated laser energy at a first wavelength and is photothermally excited into resonance at the frequency of amplitude modulation, the reflective microbridge and the reflective layer receive optical energy at a second wavelength and reflect the optical energy toward a receiver. A change in reflectivity of the microbeam at different frequencies is determined. A change in reflectivity indicates a change in resonant frequency of the microbeam. Mass of the microbeam changes when a chemoselective material on the microbeam sorbs a target chemical.

Abstract: An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.

Abstract: A system for remote optical communications includes a base station and a remote station. The remote station includes a retroreflector, a multiple quantum well modulator (MQW), and drive circuitry that drives the MQW. A base station transmitter sends an interrogating light beam to the MQW, which modulates the light beam based on the information in the electrical signal from the drive circuitry. The retroreflector reflects the modulated light beam to the base station for detection by a receiver.

Abstract: A multiple quantum well spatial light modulator combines both optically addressed and electrically addressed portions on a single wafer. The electrically and optically addressed portions may be physically distinct or combined. To fabricate the modulator, a portion of an optically addressed multiple quantum well spatial light modulator is configured as an electrically addressed portion by pixellating that portion of the multiple quantum well wafer. The frequency of the applied voltage to the electrically addressed portion is increased such that the voltage switches faster than both the dark and illuminated screening time. The electrically and optically addressed portions may be combined or positioned side-by-side. The spatial light modulator has applications in a wide variety of low-cost, high performance pattern recognition systems. In one system, a first infrared beam impinges the electrically addressed portion of the modulator and picks up the pattern electrically written thereon (i.e., the template image).

Abstract: An optically addressed spatial light modulator includes top and bottom conductive layers sandwiching an intrinsic semiconductor multilayer structure. A cladding layer having a high trapping density is sandwiched between at least one of the electrodes and the intrinsic semiconductor layer structure. Typically, one cladding layer will be sandwiched between the top conductive layer and the intrinsic semiconductor multilayer structure and another cladding layer will be sandwiched between the bottom conductive layer and the intrinsic semiconductor structure. The cladding layer or layers laterally confine the photocarriers generated within the intrinsic semiconductor multilayer structure.

Abstract: A solid-state laser device includes a neodymium laser pump source capable outputting a pump beam of about 1.1 .mu.m wavelength, and a holmium laser being pumped by said 1.1 .mu.m pump beam to generate an output laser beam of about 3 .mu.m wavelength.