Abstract: A reconfigurable built-in self test circuit for enabling the debugging of an embedded device. In one embodiment, the write data path from the built-in self test module to the embedded device includes a multiplexer which is controlled by a debug signal. When the debug signal is de-asserted, the multiplexer forwards the write data from the built-in self test module to the embedded device, thereby allowing the self test to proceed in the hard wired manner. When the debug signal is asserted, the multiplexer forwards external data from the user to the embedded device, thereby allowing the user to execute customized tests on the embedded device. A second multiplexer is similarly placed in the expected data path from the built-in self test module to the comparator to allow the user to provide external data for comparison with output data from the embedded device when the debug signal is asserted.

Abstract: A method for testing a memory device which statistically characterizes the failure time for a subset of cells sampled from the memory array before performing testing of the memory array in general. The memory device includes a testing unit which determines the failure times for cells in the sample subset, and a parameter calculation unit which computes one or more statistical parameters from the failure times. These statistical parameters are then used to determine a refresh pause time which is used in a data retention test of the memory array. The testing method may be performed when power is applied to the memory device. Thus, the BIST method may provide for the accurate detection of memory faults in the memory array at any power-up temperature. In addition, the testing method may be performed after the memory array attains an operational temperature, or in response to an operating system command.

Abstract: A test circuit is provided for detection of data retention faults and cell stability faults of a memory array, such as a static random access memory (SRAM). The memory array test circuit comprises a weak write test circuit, a memory array address decoder, a microprocessor and display unit. During testing of the memory array, the weak test circuit controls the address decoder to decrease the voltage on the word lines so that it is less than the threshold voltage of the memory array transistors. The microprocessor then writes an inverted data to the memory array and then reads it. The read inverted data is sent to the display unit for comparison with a known template. By comparing the read inverted data to the template, defective memory cells can be identified.