Abstract: Provided herein are methods to prepare Heteroaryl Compounds having the following structure: wherein R1-R4 are as defined herein. The Heteroaryl compounds are useful for treating or preventing cancer, inflammatory conditions, immunological conditions, neurodegenerative diseases, diabetes, obesity, neurological disorders, age-related diseases, or cardiovascular conditions.

Abstract: The present invention relates to a flat-shaped article with an electrical function for placement in a functional tone. Provision is made that, even after having been placed, the flat-shaped article can again be removed without being destroyed from the functional zone.

Abstract: Provided herein are methods to prepare Heteroaryl Compounds having the following structure: wherein R1-R4 are as defined herein. The Heteroaryl compounds are useful for treating or preventing cancer, inflammatory conditions, immunological conditions, neurodegenerative diseases, diabetes, obesity, neurological disorders, age-related diseases, or cardiovascular conditions.

Abstract: Provided herein are methods to prepare Heteroaryl Compounds having the following structure: wherein R1-R4 are as defined herein. The Heteroaryl compounds are useful for treating or preventing cancer, inflammatory conditions, immunological conditions, neurodegenerative diseases, diabetes, obesity, neurological disorders, age-related diseases, or cardiovascular conditions.

Abstract: A temperature control device for a climate control loop comprising at least one handle piece.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments forming an active region in a semiconductor substrate, wherein the active region is bounded by an isolation region; forming a first doped region within the active region; forming a gate electrode over the active region, wherein the gate electrode overlies a portion of the first doped region; forming at least one dielectric layer over sidewalls of the gate electrode; forming a pair of spacers on the dielectric layer; and forming a second doped region substantially within the portion of the first doped region adjacent the one of the spacers and spaced apart from the one of the spacers. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor.

Abstract: Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.

Abstract: An LDMOS transistor structure and methods of making the same are provided. The structure includes a gate electrode extended on an upper boundary of an extension dielectric region that separates the gate electrode from the drain region of the LDMOS transistor. Moreover, at an area close to an edge of the extended gate electrode portion, the gate electrode further projects downwards into a convex-shaped recess or groove in the upper boundary of the extension dielectric region, forming a tongue. LDMOS transistors with this structure may provide improved suppression of hot carrier effects.

Abstract: A moped transmission includes a crankcase assembled in four sections, namely a first section, a second section, a third section and a fourth section. A crankshaft is formed as an eccentric shaft, and the crankshaft has a crankshaft gear mounted to the crankshaft. The crankshaft passes through the first section, and the crankshaft passes through and is rotably mounted to the first planar vertical mounting face. An engine connected to the first section and the second section. A main shaft has a main shaft gear in mesh with the crankshaft gear. The main shaft passes through and is rotably mounted outside the first planar vertical mounting face. The main shaft gear is mounted to the main shaft outside the first section such that the main shaft gear is encapsulated between the first section and the third section.

Abstract: A high-voltage metal-oxide-semiconductor (HVMOS) device having increased breakdown voltage and methods for forming the same are provided. The HVMOS device includes a semiconductor substrate; a gate dielectric on a surface of the semiconductor substrate; a gate electrode on the gate dielectric; a source/drain region adjacent and horizontally spaced apart from the gate electrode; and a recess in the semiconductor substrate and filled with a dielectric material. The recess is between the gate electrode and the source/drain region, and is horizontally spaced apart from the gate electrode.

Abstract: A moped transmission includes a crankcase assembled in four sections, namely a first section, a second section, a third section and a fourth section. A crankshaft is formed as an eccentric shaft, and the crankshaft has a crankshaft gear mounted to the crankshaft. The crankshaft passes through the first section, and the crankshaft passes through and is rotably mounted to the first planar vertical mounting face. An engine connected to the first section and the second section. A main shaft has a main shaft gear in mesh with the crankshaft gear. The main shaft passes through and is rotably mounted outside the first planar vertical mounting face. The main shaft gear is mounted to the main shaft outside the first section such that the main shaft gear is encapsulated between the first section and the third section.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments forming an active region in a semiconductor substrate, wherein the active region is bounded by an isolation region; forming a first doped region within the active region; forming a gate electrode over the active region, wherein the gate electrode overlies a portion of the first doped region; forming at least one dielectric layer over sidewalls of the gate electrode; forming a pair of spacers on the dielectric layer; and forming a second doped region substantially within the portion of the first doped region adjacent the one of the spacers and spaced apart from the one of the spacers. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.

Abstract: Provided herein are methods to prepare Heteroaryl Compounds having the following structure: wherein R1-R4 are as defined herein. The Heteroaryl compounds are useful for treating or preventing cancer, inflammatory conditions, immunological conditions, neurodegenerative diseases, diabetes, obesity, neurological disorders, age-related diseases, or cardiovascular conditions.

Abstract: A transistor suitable for high-voltage applications and a method of manufacture is provided. A first device is formed by depositing a dielectric layer and a conductive layer over a substrate. A hard mask is deposited over the conductive layer and patterned using photolithography techniques. The photoresist material is removed prior to etching the underlying conductive layer and dielectric layer. The hard mask is also used as an implant mask. Another mask may be deposited and formed over the conductive layer to form other devices in other regions of the substrate. The other mask is preferably removed from over the hard mask prior to etching the conductive layer and the dielectric layer.

Abstract: A disk drive having a translatable ramp is disclosed. The disk drive includes a head gimbal assembly having a proximate end that is attached to an actuator, and a distal end that includes a lift tab. The ramp includes a lift tab supporting surface located as close to a pivot axis of the actuator as is the lift tab. The ramp also includes a ramp guiding surface that is in contact with a mating surface of the disk drive base. A fastener selectively allows or prevents relative translation between the ramp and the disk drive base. The aforementioned contact constrains the relative translation so that the relative translation changes the distance between the lift tab supporting surface and the disk axis of rotation more than the relative translation changes the distance between the lift tab supporting surface and the actuator pivot axis.

Abstract: An LDMOS transistor structure and methods of making the same are provided. The structure includes a gate electrode extended on an upper boundary of an extension dielectric region that separates the gate electrode from the drain region of the LDMOS transistor. Moreover, at an area close to an edge of the extended gate electrode portion, the gate electrode further projects downwards into a convex-shaped recess or groove in the upper boundary of the extension dielectric region, forming a tongue. LDMOS transistors with this structure may provide improved suppression of hot carrier effects.

Abstract: A method for propagating an error between video frames of a video stream wherein data in a single macroblock is propagated from a first video frame to a second video frame via inter-frame coding. Once integrated into the second video frame, the macroblock may be utilized as the basis for intra-frame coding within the second video frame. Intra-frame coding within the second video frame allows for any error in the data contained in the macroblock to propagate through the second video frame while minimizing the amount of the second video frame dedicated to propagation the existing error(s). Embodiments of the present invention are directed to the application of stress to a decoder, to cause an error in the decoder, and propagation of the error between video frames of a video stream.

Abstract: A transistor suitable for high-voltage applications and a method of manufacture is provided. A first device is formed by depositing a dielectric layer and a conductive layer over a substrate. A hard mask is deposited over the conductive layer and patterned using photolithography techniques. The photoresist material is removed prior to etching the underlying conductive layer and dielectric layer. The hard mask is also used as an implant mask. Another mask may be deposited and formed over the conductive layer to form other devices in other regions of the substrate. The other mask is preferably removed from over the hard mask prior to etching the conductive layer and the dielectric layer.

Abstract: A high-voltage metal-oxide-semiconductor (HVMOS) device having increased breakdown voltage and methods for forming the same are provided. The HVMOS device includes a semiconductor substrate; a gate dielectric on a surface of the semiconductor substrate; a gate electrode on the gate dielectric; a source/drain region adjacent and horizontally spaced apart from the gate electrode; and a recess in the semiconductor substrate and filled with a dielectric material. The recess is between the gate electrode and the source/drain region, and is horizontally spaced apart from the gate electrode.