Abstract: A heat transfer device includes a base chamber, a fin chamber, and at least one fin. The chambers can be thermally coupled. The heat transfer device also includes a wick structure. The wick structure can include a multi-wick structure. The multi-wick structure can include a three-dimensional wick structure and/or a spatially varying wick structure.

Abstract: A heat transfer device includes a chamber with a condensable fluid with an evaporative region coupled to a heat source. Within the chamber is a boiling-enhanced multi-wick structure.

Abstract: A heat transfer device includes a base chamber, a fin chamber, and at least one fin. The chambers can be thermally coupled. The heat transfer device also includes a wick structure. The wick structure can include a multi-wick structure. The multi-wick structure can include a three-dimensional wick structure and/or a spatially varying wick structure.

Abstract: A heat transfer device includes a base chamber, a fin chamber, and at least one fin. The chambers can be thermally coupled. The heat transfer device also includes a wick structure. The wick structure can include a multi-wick structure. The multi-wick structure can include a three-dimensional wick structure and/or a spatially varying wick structure.

Abstract: A heat transfer device includes a base chamber, a fin chamber, and at least one fin. The chambers can be thermally coupled. The heat transfer device also includes a wick structure. The wick structure can include a multi-wick structure. The multi-wick structure can include a three-dimensional wick structure and/or a spatially varying wick structure.

Abstract: A split-body Peltier device includes a plurality of thermoelectric junctions having dissimilar metallic conductors that are functionally interconnected in series and/or parallel by metallic conductors that may be identical to the junction materials. By using these metallic conductors, interconnection electrical resistance is reduced to allow a significant separation between the hot junction and the cold junction without dramatically increasing the ohmic heating. Further, the relatively small area-to-length ratio of the interconnecting material promotes heat loss along its length that effectively prevents heat at the hot junction from reaching the cold junction through the interconnecting material via conduction, thereby substantially eliminating Thermal Back Diffusion and accommodating auxiliary cooling devices to improve the device performance.

Abstract: A heat transfer device includes a base chamber, a fin chamber, and at least one fin. The chambers can be thermally coupled. The heat transfer device also includes a wick structure. The wick structure can include a multi-wick structure. The multi-wick structure can include a three-dimensional wick structure and/or a spatially varying wick structure.

Abstract: A semiconductor package includes a metallic foil (10) having a front surface and a rear surface, which foil (10) is formed to have a recess portion (12) including a bottom and an extended border region (14) around the recess portion (12). A substrate (30) is attached to the front surface of the foil (10) over the border region (14) to provide a support for electrical connection of a semiconductor element (40). The substrate (30) has an opening exposing the recess portion (12). A stiffener (20) is formed on the rear surface of the foil (10) for enhancing the rigidity of the foil (10). The stiffener (20) extends over the border region (14) and around the recess portion (12), with the rear surface of the bottom of the recess portion (12) exposed for heat dissipation. A semiconductor element (40) is mounted on the bottom of and within the recess portion (12).

Abstract: A split-body Peltier device includes a plurality of thermoelectric junctions having dissimilar metallic conductors that are functionally interconnected in series and/or parallel by metallic conductors that may be identical to the junction materials. By using these metallic conductors, interconnection electrical resistance is reduced to allow a significant separation between the hot junction and the cold junction without dramatically increasing the ohmic heating. Further, the relatively small area-to-length ratio of the interconnecting material promotes heat loss along its length that effectively prevents heat at the hot junction from reaching the cold junction through the interconnecting material via conduction, thereby substantially eliminating Thermal Back Diffusion and accommodating auxiliary cooling devices to improve the device performance.

Abstract: A laminated heat transfer device for cooling or thermal energy transport applications and a method of manufacture thereof. In various implementations, the laminated heat transfer device provides complex duct channels for efficient cooling. The various implementations are compatible and integrateable with each other.

Abstract: A laminated heat transfer device for cooling or thermal energy transport applications and a method of manufacture thereof. In various implementations, the laminated heat transfer device provides complex duct channels for efficient cooling. The various implementations are compatible and integrateable with each other. The method of producing a laminated heat transfer device includes specifying a three-dimensional structure as a plurality of laminae, producing the laminae from sheets of working material, stacking the laminae according to a predetermined sequence with a guiding structure, and connecting the laminae.

Abstract: A semiconductor package includes a metallic foil (10) having a front surface and a rear surface, which foil (10) is formed to have a recess portion (12) including a bottom and an extended border region (14) around the recess portion (12). A substrate (30) is attached to the front surface of the foil (10) over the border region (14) to provide a support for electrical connection of a semiconductor element (40). The substrate (30) has an opening exposing the recess portion (12). A stiffener (20) is formed on the rear surface of the foil (10) for enhancing the rigidity of the foil (10). The stiffener (20) extends over the border region (14) and around the recess portion (12), with the rear surface of the bottom of the recess portion (12) exposed for heat dissipation. A semiconductor element (40) is mounted on the bottom of and within the recess portion (12).