Patents by Inventor Wing Yu
Wing Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967556Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: GrantFiled: October 25, 2021Date of Patent: April 23, 2024Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Publication number: 20240117362Abstract: Embodiments of the present disclosure relate to lipid-PEGylated solid support and phosphoramidites derivatives, methods for preparing the same, and their uses in the delivery of oligonucleotide drugs to the cellular targets.Type: ApplicationFiled: August 16, 2023Publication date: April 11, 2024Inventors: Mufa Zou, David Yu, Aldrich N.K. Lau, Ruiming Zou, Wing C. Poon, Gang Zhao, Gengyu Du, Yun-Chiao Yao, Allen Wong, Xiaojun Li
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Publication number: 20240101609Abstract: Embodiments of a recombinant human Parainfluenza Virus (hPIV) F ectodomain trimer stabilized in a prefusion conformation are provided. Also disclosed are nucleic acids encoding the hPIV F ectodomain trimer and methods of producing the hPIV F ectodomain trimer. Methods for inducing an immune response in a subject are also disclosed. In some embodiments, the method can be a method for treating or inhibiting a hPIV infection in a subject by administering a effective amount of the recombinant hPIV F ectodomain trimer to the subject.Type: ApplicationFiled: December 12, 2023Publication date: March 28, 2024Applicants: The United States of America, as represented by the Secretary, Department of Health and Human Servi, Institute for Research in BiomedicineInventors: Baoshan Zhang, Guillaume Stewart-Jones, Tongqing Zhou, John Mascola, Kai Xu, Yongping Yang, Paul Thomas, Gwo-Yu Chuang, Li Ou, Peter Kwong, Yaroslav Tsybovsky, Wing-Pui Kong, Aliaksandr Druz, Davide Corti, Antonio Lanzavecchia
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Patent number: 11935115Abstract: System and methods for management of third party satellite radio activation/deactivation by a vehicle rental service company, wherein satellite radio services may be provided in a rental car when requested by a customer. The systems and methods will enable activation of a satellite radio shortly before or at the start of the rental period, and activation may be altered by the vehicle rental service company in the event that the rental period is shortened or extended, or if the vehicle is exchanged. The systems and methods deactivate the satellite radio service at the end of the rental period. The systems and methods may also be used to activate or deactivate other equipment or services made available via a vehicle rental service company in response to a customer request.Type: GrantFiled: December 21, 2021Date of Patent: March 19, 2024Assignee: AVIS BUDGET CAR RENTAL, LLCInventors: Wing Yu Joseph Chan, Michael J. Caron
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Patent number: 11798845Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: GrantFiled: October 28, 2020Date of Patent: October 24, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Kai Wu, Min Heon, Wei Min Chan, Tom Ho Wing Yu, Peiqi Wang, Ju Ik Kang, Feihu Wang, Nobuyuki Sasaki, Chunming Zhou
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Patent number: 11637107Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.Type: GrantFiled: June 17, 2021Date of Patent: April 25, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Tom Ho Wing Yu, Nobuyuki Sasaki, Jianxin Lei, Wenting Hou, Rongjun Wang, Tza-Jing Gung
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Publication number: 20230115130Abstract: Embodiments of the present disclosure generally relate to methods for forming or otherwise producing metal silicides on a silicon surface of substrate. Exemplary metal silicides can be or include titanium silicide, cobalt silicide, nickel silicide, molybdenum silicide, or alloys thereof. In one or more embodiments, a method of forming a metal silicide is provided and includes removing a native oxide from a substrate to reveal a silicon surface of the substrate during a cleaning process, depositing a metallic layer on the silicon surface during a deposition process, and heating the substrate contained within a process region containing hydrogen gas during a silicidation process to produce a metal silicide layer on the substrate from the metallic layer and the silicon surface.Type: ApplicationFiled: October 13, 2021Publication date: April 13, 2023Inventors: Tom Ho Wing YU, Nobuyuki SASAKI
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Patent number: 11626410Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.Type: GrantFiled: July 11, 2022Date of Patent: April 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Tom Ho Wing Yu, Nobuyuki Sasaki, Jianxin Lei, Wenting Hou, Rongjun Wang, Tza-Jing Gung
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Patent number: 11607403Abstract: The therapeutic uses of febuxostat or febuxostat derivatives and compositions comprising febuxostat or febuxostat derivatives to promote neurogenesis for the treatment of disease.Type: GrantFiled: November 8, 2016Date of Patent: March 21, 2023Assignee: Morningside Ventures LimitedInventors: Nancy Yuk-Yu Ip, Wing-Yu Fu, Fanny Chui Fun Ip, Kit Yu Fu
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Publication number: 20220406788Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.Type: ApplicationFiled: June 17, 2021Publication date: December 22, 2022Applicant: Applied Materials, Inc.Inventors: Tom Ho Wing Yu, Nobuyuki Sasaki, Jianxin Lei, Wenting Hou, Rongjun Wang, Tza-Jing Gung
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Publication number: 20220406790Abstract: Bit line stacks and methods of forming bit line stacks are described herein. A bit line stack comprises: a polysilicon layer; an adhesion layer on the polysilicon layer; a barrier metal layer on the adhesion layer; an interface layer on the barrier metal layer; a resistance reducing layer on the interface layer; and a conductive layer on the resistance reducing layer. A bit line stack having the resistance reducing layer has a resistance at least 5% lower than a comparable bit line stack without the resistance reducing layer. The resistance reducing layer may include silicon oxide or silicon nitride. The resistance reducing layer may be formed using one or more of a physical vapor deposition (PVD), a radio frequency-PVD, a pulsed-PVD, chemical vapor deposition (CVD), atomic layer deposition (ALD) or sputtering process.Type: ApplicationFiled: July 11, 2022Publication date: December 22, 2022Applicant: Applied Materials, Inc.Inventors: Tom Ho Wing Yu, Nobuyuki Sasaki, Jianxin Lei, Wenting Hou, Rongjun Wang, Tza-Jing Gung
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Publication number: 20220336274Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU
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Publication number: 20220130724Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: October 28, 2020Publication date: April 28, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU
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Publication number: 20220045007Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: ApplicationFiled: October 25, 2021Publication date: February 10, 2022Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Patent number: 11205221Abstract: System and methods for management of third party satellite radio activation/deactivation by a vehicle rental service company, wherein satellite radio services may be provided in a rental car when requested by a customer. The systems and methods will enable activation of a satellite radio shortly before or at the start of the rental period, and activation may be altered by the vehicle rental service company in the event that the rental period is shortened or extended, or if the vehicle is exchanged. The systems and methods deactivate the satellite radio service at the end of the rental period. The systems and methods may also be used to activate or deactivate other equipment or services made available via a vehicle rental service company in response to a customer request.Type: GrantFiled: March 17, 2020Date of Patent: December 21, 2021Assignee: AVIS BUDGET CAR RENTAL, LLCInventors: Wing Yu Joseph Chan, Michael J. Caron
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Patent number: 11158577Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: GrantFiled: January 31, 2020Date of Patent: October 26, 2021Assignee: Micron Technology, Inc.Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Publication number: 20210327717Abstract: Methods and apparatus for the formation of cobalt disilicide are described. Some embodiments of the disclosure provide in-situ methods of forming cobalt disilicide. The resulting films are smoother and have lower resistance and resistivity than films formed by similar ex-situ methods. Some embodiments of the disclosure provide apparatus for performing the described methods without an air break between processes.Type: ApplicationFiled: April 15, 2020Publication date: October 21, 2021Applicant: Applied Materials, Inc.Inventors: Tom Ho Wing Yu, Nobuyuki Sasaki, Kazuya Daito
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Publication number: 20210242131Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.Type: ApplicationFiled: January 31, 2020Publication date: August 5, 2021Inventors: Biow Hiem Ong, David A. Daycock, Chieh Hsien Quek, Chii Wean Calvin Chen, Christian George Emor, Wing Yu Lo
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Publication number: 20210171645Abstract: The present invention provides new, fully human EphA4 monoclonal antibodies with distinct binding characteristics. Also disclosed are antigen binding fragments of these antibodies, bispecific forms of these antibodies, and conjugates of these antibodies. In addition, nucleic acids encoding these antibodies, antigen binding fragments, bispecific antibodies and conjugates are disclosed. These monoclonal antibodies, antigen binding fragments, bispecific antibodies, conjugates, nucleic acids and vectors are of use for identifying and treating a subject with a disease or condition involving abnormal EphA4-mediated signaling.Type: ApplicationFiled: February 15, 2021Publication date: June 10, 2021Inventors: Nancy Yuk-Yu Ip, Kit Yu Fu, Wing Yu Fu, Dimiter S. Dimitrov, Tianlei Ying
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Patent number: D1023269Type: GrantFiled: November 23, 2021Date of Patent: April 16, 2024Assignee: PURACLENZ LLCInventors: Christopher Patrick Dooley, Wing Kau Spencer Fok, Tin Yu Wong