Patents by Inventor Winston K. Chan

Winston K. Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a field-effect transistor over gate electrode
    Patent number: 5401665
    Abstract: A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.
    Type: Grant
    Filed: January 5, 1994
    Date of Patent: March 28, 1995
    Assignee: Bell Communications Research, Inc.
    Inventor: Winston K. Chan
  • Field-effect transistor formed over gate electrode
    Patent number: 5302842
    Abstract: A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.
    Type: Grant
    Filed: July 20, 1992
    Date of Patent: April 12, 1994
    Assignee: Bell Communications Research, Inc.
    Inventor: Winston K. Chan
  • Optically controlled surface-emitting lasers
    Patent number: 5132982
    Abstract: An optically controlled vertical-cavity, surface-emitting laser comprising a heterojunction, bipolar photo-transistor epitaxially grown on a substrate and a vertical-cavity, surface-emitting laser epitaxially grown on the photo-transistor. Two electrodes set up a single current path through the laser and photo-transistor. A controlling optical beam selectively illuminates the photo-transistor to turn it on, open the current path through the laser, and causing the laser to emit light. Dependent upon the electrical biasing conditions, the combination device can be used as an optical amplifier or can be made to optically latch. Further, it can be biased to operate as an AND or OR gate.
    Type: Grant
    Filed: May 9, 1991
    Date of Patent: July 21, 1992
    Assignee: Bell Communications Research, Inc.
    Inventors: Winston K. Chan, Ann C. Von Lehmen
  • Schottky barrier on indium gallium arsenide
    Patent number: 4954851
    Abstract: The formation on an indium gallium arsenide substrate of a cadmium-containing layer significantly enhances the Schottky-barrier height between an overlying metal and the substrate. Device structures such as gates for indium gallium arsenide field-effect transistors are thereby made feasible.
    Type: Grant
    Filed: May 26, 1988
    Date of Patent: September 4, 1990
    Assignee: Bell Communications Research Inc.
    Inventor: Winston K. Chan
  • Phase-shifted gratings by selective image reversal of photoresist
    Patent number: 4885231
    Abstract: Image reversal is controlled to occur in lithographically defined regions of a positive photoresist. In that way, selective reversal of a simple holographic grating is achieved to obtain 180-degree phase shifts within lighographically defined regions of the grating. Such a phase-shifted grating is useful, for example, to provide distributed feedback in a semiconductor laser designed for single-longitudinal-mode operation.
    Type: Grant
    Filed: May 6, 1988
    Date of Patent: December 5, 1989
    Assignee: Bell Communications Research, Inc.
    Inventor: Winston K. Chan