Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.

Abstract: A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region.

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.

Abstract: The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.