Abstract: A light receiving unit having a first energy source made up of two sub sources. A first terminal contact is formed at the upper face of the first sub source and a second terminal contact is formed at the lower face of the second sub source. The sub source has at least one semiconductor diode that has an absorption edge adapted to a first wavelength of light and the second semiconductor diode has an absorption edge adapted to a second wavelength of light which is different from the first wavelength of light, such that the first sub source generates electric voltage upon being irradiated with the first wavelength of light and the second sub source generates electric voltage upon being irradiated with the second wavelength of light.

Abstract: A method for producing a light-emitting diode with a stacked structure, having a first region and a second region and a third region, wherein all three regions have a substrate and an n-doped lower cladding layer and an active layer generating electromagnetic radiation, wherein the active layer includes a quantum well structure, and a p-doped upper cladding layer, and the first region additionally has a tunnel diode formed on the upper cladding layer and composed of a p+ layer and an n+ layer, and an n-doped current distribution layer. The current distribution layer and the n-doped contact layer are covered with a conductive trace. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design. The second region has a contact hole with a bottom region.

Abstract: A light-emitting diode with a stacked structure, having a first region and a second region and a third region, wherein all three regions have a substrate and an n-doped lower cladding layer and an active layer generating electromagnetic radiation, wherein the active layer includes a quantum well structure, and a p-doped upper cladding layer, and the first region additionally has a tunnel diode formed on the upper cladding layer and composed of a p+ layer and an n+ layer, and an n-doped current distribution layer. The current distribution layer and the n-doped contact layer are covered with a conductive trace. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design. The second region has a contact hole with a bottom region.

Abstract: An optocoupler having a transmitter unit and a receiver unit being electrically isolated from each other and optically coupled with each other and integrated into a shared housing. The receiver unit includes an energy source that has a first electrical contact and a second electrical contact. The transmitter unit includes at least one first transmitter diode having a first optical wavelength and a second transmitter diode having a second optical wavelength. The first optical wavelength differing from the second optical wavelength by a difference wavelength, and the energy source of the receiving unit including two partial sources. The energy source being designed as a current source or as a voltage source, and the first partial source including a first semiconductor diode, and the second partial source including a second semiconductor diode. Each partial source having multiple semiconductor layers for each partial source being arranged in the shape of a stack.

Abstract: A light-emitting diode with a stacked structure, having a first region and a second region and a third region, wherein all three regions have a substrate and an n-doped lower cladding layer and an active layer generating electromagnetic radiation, wherein the active layer includes a quantum well structure, and a p-doped upper cladding layer, and the first region additionally has a tunnel diode formed on the upper cladding layer and composed of a p+ layer and an n+ layer, and an n-doped current distribution layer. The current distribution layer and the n-doped contact layer are covered with a conductive trace. At least the lower cladding layer, the active layer, the upper cladding layer, the tunnel diode, and the current distribution layer are monolithic in design. The second region has a contact hole with a bottom region.

Abstract: A device having a multi-junction solar cell and a protection diode structure, whereby the multi-junction solar cell and the protection diode structure have a common rear surface and front sides separated by a mesa trench. The common rear surface comprises an electrically conductive layer, and the light enters through the front side into the multi-junction solar cell. The cell includes a stack of a plurality of solar cells, and has a top cell, placed closest to the front side, and a bottom solar cell, placed closest to the rear side, and a tunnel diode is placed between adjacent solar cells. The number of semiconductor layers in the protection diode structure is smaller than the number of semiconductor layers in the multi-junction solar cell. The sequence of the semiconductor layers in the protection diode structure corresponds to the sequence of semiconductor layers of the multi-junction solar cell.

Abstract: The present invention relates to an arrangement having at least one solar cell, which is formed by a first sequence of differently doped layers (1, 2, 11, 12) on a substrate (6, 16), and at least one bypass diode, which is connected to the solar cell, particularly in a monolithic, series-connected solar module. The arrangement is characterized in that the bypass diode is formed by a second sequence of layers (4, 5, 13, 14), which is arranged between the substrate (6, 16) and the first layer sequence (1, 2, 11, 12). With the proposed arrangement monolithic, series-connected solar modules can be formed at a very low loss of active receiving surface, the solar cells of which are protected by bypass diodes.

Abstract: The present invention relates to an arrangement having at least one solar cell, which is formed by a first sequence of differently doped layers (1, 2, 11, 12) on a substrate (6, 16), and at least one bypass diode, which is connected to the solar cell, particularly in a monolithic, series-connected solar module. The arrangement is characterised in that the bypass diode is formed by a second sequence of layers (4, 5, 13, 14), which is arranged between the substrate (6, 16) and the first layer sequence (1, 2, 11, 12). With the proposed arrangement monolithic, series-connected solar modules can be formed at a very low loss of active receiving surface, the solar cells of which are protected by bypass diodes.