Patents by Inventor Wolfgang Lehnert

Wolfgang Lehnert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11328935
    Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 10, 2022
    Assignee: Infineon Technologies AG
    Inventors: Johann Gatterbauer, Wolfgang Lehnert, Norbert Mais, Verena Muhr, Edmund Riedl, Harry Sax
  • Publication number: 20210375792
    Abstract: A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.
    Type: Application
    Filed: May 28, 2021
    Publication date: December 2, 2021
    Applicant: Infineon Technologies AG
    Inventors: Harry Walter SAX, Johann GATTERBAUER, Wolfgang LEHNERT, Evelyn NAPETSCHNIG, Michael ROGALLI
  • Publication number: 20210351077
    Abstract: A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.
    Type: Application
    Filed: July 22, 2021
    Publication date: November 11, 2021
    Inventors: Francisco Javier Santos Rodriguez, Günter Denifl, Tobias Hoechbauer, Martin Huber, Wolfgang Lehnert, Roland Rupp, Hans-Joachim Schulze
  • Patent number: 11107732
    Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: August 31, 2021
    Assignee: Infineon Technologies AG
    Inventors: Francisco Javier Santos Rodriguez, Guenter Denifl, Tobias Franz Wolfgang Hoechbauer, Martin Huber, Wolfgang Lehnert, Roland Rupp, Hans-Joachim Schulze
  • Publication number: 20210159115
    Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.
    Type: Application
    Filed: November 25, 2020
    Publication date: May 27, 2021
    Inventors: Werner SCHUSTEREDER, Alexander BREYMESSER, Mihai DRAGHICI, Tobias Franz Wolfgang HOECHBAUER, Wolfgang LEHNERT, Hans-Joachim SCHULZE, Marko David SWOBODA
  • Patent number: 10903078
    Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: January 26, 2021
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joachim Schulze, Alexander Breymesser, Guenter Denifl, Mihai Draghici, Bernhard Goller, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert, Roland Rupp, Werner Schustereder
  • Publication number: 20210013090
    Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 14, 2021
    Inventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl
  • Publication number: 20200357637
    Abstract: A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 12, 2020
    Inventors: Roland Rupp, Mihai Draghici, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert, Matteo Piccin
  • Patent number: 10784145
    Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: September 22, 2020
    Assignee: Infineon Technologies AG
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20200227278
    Abstract: A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 16, 2020
    Inventors: Johann Gatterbauer, Wolfgang Lehnert, Norbert Mais, Verena Muhr, Edmund Riedl, Harry Sax
  • Patent number: 10651072
    Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: May 12, 2020
    Assignee: Infineon Technologies AG
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20190362972
    Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 28, 2019
    Inventors: Hans-Joachim Schulze, Alexander Breymesser, Guenter Denifl, Mihai Draghici, Bernhard Goller, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert, Roland Rupp, Werner Schustereder
  • Publication number: 20190348328
    Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.
    Type: Application
    Filed: May 13, 2019
    Publication date: November 14, 2019
    Inventors: Francisco Javier Santos Rodriguez, Guenter Denifl, Tobias Franz Wolfgang Hoechbauer, Martin Huber, Wolfgang Lehnert, Roland Rupp, Hans-Joachim Schulze
  • Patent number: 10431504
    Abstract: A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: October 1, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Wolfgang Lehnert, Rudolf Berger, Albert Birner, Helmut Brech, Oliver Häberlen, Guenther Ruhl, Roland Rupp
  • Publication number: 20190244850
    Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20190244853
    Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20180366427
    Abstract: A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.
    Type: Application
    Filed: June 19, 2018
    Publication date: December 20, 2018
    Inventors: Michael Rogalli, Johann Gatterbauer, Wolfgang Lehnert, Kurt Matoy, Evelyn Napetschnig, Manfred Schneegans, Bernhard Weidgans
  • Patent number: 10103123
    Abstract: Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: October 16, 2018
    Assignee: Infineon Technologies AG
    Inventors: Michael Rogalli, Wolfgang Lehnert
  • Patent number: 10020226
    Abstract: In certain embodiments, a semiconductor device includes a plurality of semiconductor chips. Each semiconductor chip comprises a semiconductor body having a first side and a second side opposite the first side, a graphite substrate bonded to the second side of the semiconductor body and comprising an opening leaving an area of the second side of the semiconductor body uncovered by the graphite substrate, and a back-side metallization arranged in the opening of the graphite substrate and electrically contacting the area of the second side. The semiconductor device further includes a plurality of separation trenches each separating one of the plurality of semiconductor chips from an adjacent one of the plurality of semiconductor chips.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: July 10, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Roland Rupp, Wolfgang Lehnert, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze
  • Publication number: 20180047619
    Abstract: A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.
    Type: Application
    Filed: July 25, 2017
    Publication date: February 15, 2018
    Inventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl