Abstract: In some examples, a multi-wavelength power meter may include a first coupler to separate optical signals from an optical line terminal and an optical network terminal to ascertain a reduced percentage of total power related to the optical signals. A second coupler may receive the separated optical signals, combine the separated optical signals, and output the combined optical signals to an optical fiber. A filter may be communicatively connected to the optical fiber to isolate at least one specified wavelength or wavelength range of the combined optical signals. A photodiode may be communicatively connected to the filter for power measurement of the at least one specified wavelength or wavelength range.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A system for measuring linear and non-linear transmission perturbations in optical transmission systems is disclosed. The system may include a processor to help facilitate measurement of non-linear noise at an optical transceiver. The system, for example, may receive a reference correlation of a transmission of a channel of a fiber link, record an optical power spectrum of the channel, and determine a baud rate of the channel. The system may also apply a spectral correlation technique to the channel with a multiple baud rate distance in frequency domain. The system may also calculate a generalized optical signal-to-noise ratio (gOSNR) value based on the spectral correlation technique and the reference correlation. The system may also compare the gOSNR with wavelength division multiplexed (WDM) OSNR measurements to evaluate an amount of non-linear noise contributions.

Abstract: In some examples, a multi-wavelength power meter may include a first coupler to separate optical signals from an optical line terminal and an optical network terminal to ascertain a reduced percentage of total power related to the optical signals. A second coupler may receive the separated optical signals, combine the separated optical signals, and output the combined optical signals to an optical fiber. A filter may be communicatively connected to the optical fiber to isolate at least one specified wavelength or wavelength range of the combined optical signals. A photodiode may be communicatively connected to the filter for power measurement of the at least one specified wavelength or wavelength range.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.

Abstract: In some examples, a multi-wavelength power meter may include a first coupler to separate optical signals from an optical line terminal and an optical network terminal to ascertain a reduced percentage of total power related to the optical signals. A second coupler may receive the separated optical signals, combine the separated optical signals, and output the combined optical signals to an optical fiber. A filter may be communicatively connected to the optical fiber to isolate at least one specified wavelength or wavelength range of the combined optical signals. A photodiode may be communicatively connected to the filter for power measurement of the at least one specified wavelength or wavelength range.

Abstract: A system for measuring linear and non-linear transmission perturbations in optical transmission systems is disclosed. The system may include a processor to help facilitate measurement of non-linear noise at an optical transceiver. The system, for example, may receive a reference correlation of a transmission of a channel of a fiber link, record an optical power spectrum of the channel, and determine a baud rate of the channel. The system may also apply a spectral correlation technique to the channel with a multiple baud rate distance in frequency domain. The system may also calculate a generalized optical signal-to-noise ratio (gOSNR) value based on the spectral correlation technique and the reference correlation. The system may also compare the gOSNR with wavelength division multiplexed (WDM) OSNR measurements to evaluate an amount of non-linear noise contributions.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: In some examples, a multi-wavelength power meter may include a first coupler to separate optical signals from an optical line terminal and an optical network terminal to ascertain a reduced percentage of total power related to the optical signals. A second coupler may receive the separated optical signals, combine the separated optical signals, and output the combined optical signals to an optical fiber. A filter may be communicatively connected to the optical fiber to isolate at least one specified wavelength or wavelength range of the combined optical signals. A photodiode may be communicatively connected to the filter for power measurement of the at least one specified wavelength or wavelength range.

Abstract: In some examples, a multi-wavelength power meter may include a first coupler to separate optical signals from an optical line terminal and an optical network terminal to ascertain a reduced percentage of total power related to the optical signals. A second coupler may receive the separated optical signals, combine the separated optical signals, and output the combined optical signals to an optical fiber. A filter may be communicatively connected to the optical fiber to isolate at least one specified wavelength or wavelength range of the combined optical signals. A photodiode may be communicatively connected to the filter for power measurement of the at least one specified wavelength or wavelength range.

Abstract: A method of producing an optoelectronic component includes embedding an optoelectronic component part into a molded body such that an upper side of the optoelectronic component part is at least partially exposed on an upper side of the molded body; arranging and structuring a sacrificial layer above the upper side of the optoelectronic component part and the upper side of the molded body; arranging and structuring a layer of an optical material above the sacrificial layer; and removing the sacrificial layer.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.

Abstract: A method of producing an optoelectronic component includes embedding an optoelectronic component part into a molded body such that an upper side of the optoelectronic component part is at least partially exposed on an upper side of the molded body; arranging and structuring a sacrificial layer above the upper side of the optoelectronic component part and the upper side of the molded body; arranging and structuring a layer of an optical material above the sacrificial layer; and removing the sacrificial layer.

Abstract: The invention relates to a lighting means (1), comprising: an optical element (3), which has a main extension direction (Z), a radiation inlet surface (3a), and a radiation outlet surface (3b); and at least two light-emitting diodes (2), which each comprise at least one light-emitting diode chip (21) and a radiation passage surface (2a), which extends along a main extension plane (XZ); wherein the at least two lighting-emitting diodes (2) are arranged along the main extension direction (Z) of the optical element (3), the radiation inlet surface (3a) of the optical element (3) faces the radiation passage surfaces (2a) of the at least two light-emitting diodes (2), the optical element (3) is formed as a solid body, the radiation inlet surface (3a) of the optical element (3) is flat or convexly curved, and the radiation outlet surface (3b) of the optical element (3) comprises at least one recess (4) in the optical element (3).

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

Abstract: A method of producing a partial luminaire includes arranging at least one semiconductor chip that emits electromagnetic radiation on a substrate, and applying an elastic waveguide, disposed downstream of the at least one semiconductor chip in an emission direction, such that the elastic waveguide projects at at least one of its side surfaces beyond the substrate.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.