Patents by Inventor Wolfgang Moench
Wolfgang Moench has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9614131Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.Type: GrantFiled: December 11, 2013Date of Patent: April 4, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Britta Göötz, Wolfgang Mönch, Norwin von Malm
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Publication number: 20170054054Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.Type: ApplicationFiled: May 22, 2015Publication date: February 23, 2017Inventors: Adam Bauer, Wolfgang Mönch, David Racz, Michael Wittmann, Dominik Schulten, Andreas Löffler
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Publication number: 20170002988Abstract: The invention relates to a lighting means (1), comprising: an optical element (3), which has a main extension direction (Z), a radiation inlet surface (3a), and a radiation outlet surface (3b); and at least two light-emitting diodes (2), which each comprise at least one light-emitting diode chip (21) and a radiation passage surface (2a), which extends along a main extension plane (XZ); wherein the at least two lighting-emitting diodes (2) are arranged along the main extension direction (Z) of the optical element. (3), the radiation inlet surface (3a) of the optical element (3) faces the radiation passage surfaces (2a) of the at least two light-emitting diodes (2), the optical element (3) is formed as a solid body, the radiation inlet surface (3a) of the optical element (3) is flat or convexly curved, and the radiation outlet surface (3b) of the optical element (3) comprises at least one recess (4) in the optical element (3).Type: ApplicationFiled: January 16, 2015Publication date: January 5, 2017Inventors: Sandra SOBCZYK, Frank SINGER, Wolfgang MÖNCH, Matthias SABATHIL
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Patent number: 9537063Abstract: A method for producing a plurality of optoelectronic components (100) comprises the steps: providing a semiconductor body (101) that is arranged on a carrier (114); and applying a converter material (105) to the semiconductor body (101) by means of a photoconductive transfer element (120).Type: GrantFiled: July 9, 2013Date of Patent: January 3, 2017Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Siegfried Herrmann, Wolfgang Moench
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Patent number: 9496462Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.Type: GrantFiled: December 18, 2013Date of Patent: November 15, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Britta Göötz, Wolfgang Mönch, Martin Straβburg
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Patent number: 9461218Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.Type: GrantFiled: February 20, 2013Date of Patent: October 4, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Stefan Illek, Matthias Sabathil, Alexander Linkov, Thomas Bleicher, Norwin von Malm, Wolfgang Mönch
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Publication number: 20160276556Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.Type: ApplicationFiled: November 4, 2014Publication date: September 22, 2016Inventors: Thomas Schwarz, Frank Singer, Alexander Linkov, Stefan Illek, Wolfgang Moench
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Publication number: 20160146434Abstract: A conversion element includes a separating structure and a multiplicity of conversion regions, wherein each conversion region is at least partly enclosed by a part of the separating structure, and each conversion region converts electromagnetic primary radiation at least partly into a secondary radiation having a longer wavelength.Type: ApplicationFiled: July 3, 2014Publication date: May 26, 2016Inventors: Wolfgang Mönch, Frank Singer
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Publication number: 20160149101Abstract: In at least one embodiment, the optoelectronic semiconductor component (1) comprises a cast body (4). At least one optoelectronic semiconductor chip (3) is designed to generate radiation and is situated in a recess (43) in the cast body (4). The semiconductor chip (3) has a main radiation side (30) having an edge length (L). At least one lens plate (5), which covers the recess (43), is arranged downstream of the semiconductor chip (1) in a main radiation direction (M). The lens plate (5) has a plurality of structural elements (55) on an upper side (50) that faces away from the semiconductor chip (1). The lens plate (5) has a diameter (D) that is at least 1.5 times the edge length (L). A thickness (H) of the lens plate (5) is at least 0.1 times and at most 1.5 times the diameter (D). The lens plate (5) covers the main radiation side (30) completely.Type: ApplicationFiled: June 25, 2014Publication date: May 26, 2016Applicant: OSRAM Opto Semicouductors GmbHInventors: Frank SINGER, Wolfgang MOENCH, Alexander LINKOV
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Publication number: 20160087177Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.Type: ApplicationFiled: May 5, 2014Publication date: March 24, 2016Inventors: Thomas Schwarz, Frank Singer, Alexander Linkov, Stefan Illek, Wolfgang Mönch
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Publication number: 20160076731Abstract: An optical arrangement includes a multiplicity of light-emitting chips on a carrier. In this case, first light-emitting chips respectively include pixels of a first group and second light-emitting chips respectively comprise pixels of a second group. Respectively one of the first and one of the second light-emitting chips are arranged in first unit cells in a planar fashion on the carrier. Furthermore, an optical element is provided, which is disposed downstream of the light-emitting chips in the emission direction. It is designed to guide light emitted by the pixels of the first and second groups in such a way that light from the pixels of the first group and light from the pixels of the second group are combined in second unit cells in a coupling-out plane, wherein the second unit cells each have an area that is smaller than the area of each of the first unit cells.Type: ApplicationFiled: April 15, 2014Publication date: March 17, 2016Inventors: Wolfgang Mönch, Stefan Illek, Alexander Linkov
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Publication number: 20150349215Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.Type: ApplicationFiled: December 18, 2013Publication date: December 3, 2015Inventors: Britta Göötz, Wolfgang Mönch, Martin Straßburg
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Publication number: 20150311407Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.Type: ApplicationFiled: December 11, 2013Publication date: October 29, 2015Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Britta GÖÖTZ, Wolfgang MÖNCH, Norwin VON MALM
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Patent number: 9159890Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.Type: GrantFiled: February 14, 2014Date of Patent: October 13, 2015Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Juergen Moosburger, Britta Goeoetz, Georg Dirscherl, Wolfgang Moench, Alexander Linkov
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Publication number: 20150247608Abstract: A method of producing a partial luminaire includes arranging at least one semiconductor chip that emits electromagnetic radiation on a substrate, and applying an elastic waveguide, disposed downstream of the at least one semiconductor chip in an emission direction, such that the elastic waveguide projects at at least one of its side surfaces beyond the substrate.Type: ApplicationFiled: January 17, 2013Publication date: September 3, 2015Inventors: Wolfgang Mönch, Thomas Bleicher
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Publication number: 20150207044Abstract: A method for producing a plurality of optoelectronic components (100) comprises the steps: providing a semiconductor body (101) that is arranged on a carrier (114); and applying a converter material (105) to the semiconductor body (101) by means of a photoconductive transfer element (120).Type: ApplicationFiled: July 9, 2013Publication date: July 23, 2015Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Siegfried Herrmann, Wolfgang Moench
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Publication number: 20150097198Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.Type: ApplicationFiled: February 20, 2013Publication date: April 9, 2015Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Stefan Illek, Matthias Sabathil, Alexander Linkov, Thomas Bleicher, Norwin von Malm, Wolfgang Mönch
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Publication number: 20140246690Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.Type: ApplicationFiled: February 14, 2014Publication date: September 4, 2014Inventors: Juergen Moosburger, Britta Goeoetz, Georg Dirscherl, Wolfgang Moench, Alexander Linkov
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Patent number: 5886517Abstract: In a displacement pick-up for detecting the displacement of an actuator driven by a rotating drive element, which has an indexing mechanism (11) with a first indexing wheel (13), driven by the drive element and having an indexing cam (19), and a rotatable second indexing wheel with encompassing teeth (20), and which also has a device (12) for detecting the rotary position of the second indexing wheel (15), for the sake of achieving high freedom from noise the teeth (20) on the second indexing wheel (15) and the indexing cam (19) meshing with them on the first indexing wheel (13) are embodied with large surface areas, and the two indexing wheels (13, 15) are magnetized in such a way that their respective immediately adjacent faces repel one another.Type: GrantFiled: October 28, 1996Date of Patent: March 23, 1999Inventors: Siegfried Reichmann, Wolfgang Moench