Patents by Inventor Wolfgang Raberg

Wolfgang Raberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200217907
    Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
    Type: Application
    Filed: January 9, 2019
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Wolfgang RABERG, Clemens MUEHLENHOFF, Juergen ZIMMER
  • Publication number: 20200220075
    Abstract: Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventor: Wolfgang RABERG
  • Patent number: 10665778
    Abstract: Methods and apparatuses for producing magneto resistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magneto resistive elements.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: May 26, 2020
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10649010
    Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: May 12, 2020
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Raberg, Goran Keser, Matthias Rose, Rainer Markus Schaller
  • Patent number: 10649043
    Abstract: Magnetic field sensor devices and associated methods are disclosed. Magnetic field sensor devices may comprise a first magnetic field sensor having a first bridge part spatially separated from a second bridge part. In some implementations, a second magnetic field sensor may be arranged between the first bridge part and the second bridge part. With this arrangement, measurements read by the magnetic field sensor device have high precision and low jitter.
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: May 12, 2020
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10585148
    Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 10, 2020
    Assignee: Infineon Technologies AG
    Inventors: Anton Bachleitner Hofmann, Hubert Brueckl, Klemens Pruegl, Wolfgang Raberg, Armin Satz, Dieter Suess, Tobias Wurft
  • Patent number: 10571527
    Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dieter Suess, Hubert Brueckl, Klemens Pruegl, Wolfgang Raberg, Armin Satz
  • Patent number: 10545199
    Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: January 28, 2020
    Assignee: Infineion Technologies Austria AG
    Inventors: Hermann Gruber, Sergio Morini, Wolfgang Raberg, Holger Wille
  • Patent number: 10458813
    Abstract: A magnetic field sensor is disclosed that includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component H1, and at least one AMR sensor element configured to sense a second magnetic field component H2 which is perpendicular to the first magnetic field component H1. In one example the at least one magneto-resistive spin-valve sensor element is a tunnel magneto-resistive (TMR) or giant magneto-resistive (GMR) sensor, and in one example the AMR sensor element includes an antiferromagnetic layer coupled to a ferromagnetic layer generating a bias magnetization for the AMR sensor element.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: October 29, 2019
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10422662
    Abstract: A magnetic field sensor is disclosed that includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component H1, and at least one AMR sensor element configured to sense a second magnetic field component H2 which is perpendicular to the first magnetic field component H1. In one example the at least one magneto-resistive spin-valve sensor element is a tunnel magneto-resistive (TMR) or giant magneto-resistive (GMR) sensor, and in one example the AMR sensor element includes an antiferromagnetic layer coupled to a ferromagnetic layer generating a bias magnetization for the AMR sensor element.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 24, 2019
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Publication number: 20190277661
    Abstract: A magnetic field sensor includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component, and at least one AMR sensor element configured to sense a second magnetic field component which is perpendicular to the first magnetic field component.
    Type: Application
    Filed: May 20, 2019
    Publication date: September 12, 2019
    Inventor: Wolfgang Raberg
  • Patent number: 10403813
    Abstract: Embodiments relate to magnetoresistive (xMR) sensors. In an embodiment, an xMR stack structure is configured to form two different xMR elements that can be coupled to form a locally differential Wheatstone bridge. The result is a highly sensitive magnetic sensor with small dimensions and robustness against thermal drift and sensor/encoder pitch mismatch that can be produced using standard processing equipment. Embodiments also relate to methods of forming and patterning the stack structure and sensors that provide information regarding direction in addition to speed.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: September 3, 2019
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10399394
    Abstract: A sensor module is provided that includes a magnetic sensor and a microcontroller. The magnetic sensor is configured to measure a magnitude of a magnetic field component of an Earth magnetic field projected on a sensing axis of the magnetic sensor and is configured to generate a measurement signal. The magnetic sensor is configured to rotate about an axis through the Earth magnetic field such that the measurement signal oscillates between a first and second extremas as the magnitude of the magnetic field component projected onto the sensing axis changes due to rotation of the magnetic sensor about the axis. The microcontroller is configured to receive the measurement signal, acquire a predetermined number of measurement samples over a sampling period, calculate a variance value of the acquired measurement samples, and determine whether the magnetic sensor is rotating about the axis based on a threshold test of the variance value.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: September 3, 2019
    Assignee: Infineon Technologies AG
    Inventors: Jooil Park, Felix Gow, Thomas Lange, Karine Pillet, Wolfgang Raberg, Maximilian Werner, Ren Yi You
  • Publication number: 20190265313
    Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Inventors: Hermann Gruber, Sergio Morini, Wolfgang Raberg, Holger Wille
  • Patent number: 10324144
    Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: June 18, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Hermann Gruber, Sergio Morini, Wolfgang Raberg, Holger Wille
  • Patent number: 10317480
    Abstract: A magneto resistive device having a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements has a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater. There may be one hundred or more magneto resistive sensing elements.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: June 11, 2019
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Raberg, Andreas Strasser
  • Patent number: 10109367
    Abstract: A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. An input node of the magnetic memory device is coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal. The first tunnel magnetoresistive element initially holds a first resistance value, wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node. End nodes of the memory circuit are coupled to defined voltages in a read mode. The magnetic memory device further includes a read-out circuit configured to measure a voltage at a sensing node in the read mode. The sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: October 23, 2018
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10008225
    Abstract: An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also comprises a magnetic reference layer having a non-closed flux reference magnetization pattern. The magnetic sensor device further comprises a magnetic biasing structure configured to generate a biasing field in the magnetic free layer, the biasing field having a non-zero magnetic biasing field component perpendicular to the reference magnetization pattern.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: June 26, 2018
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Raberg, Tobias Wurft
  • Publication number: 20180172783
    Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.
    Type: Application
    Filed: December 20, 2016
    Publication date: June 21, 2018
    Inventors: Hermann Gruber, Sergio Morini, Wolfgang Raberg, Holger Wille
  • Publication number: 20180172739
    Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.
    Type: Application
    Filed: December 20, 2016
    Publication date: June 21, 2018
    Inventors: Wolfgang Raberg, Goran Keser, Matthias Rose, Rainer Markus Schaller