Abstract: The implementation proposes a magnetoresistive sensor, including at least one xMR sensor element formed from a layer stack, having a magnetically free layer having a magnetically free vortex magnetization, and having at least one reference layer having a reference magnetization in a predetermined direction. Magnetically free layers having a magnetically free vortex magnetization that are arranged along the predetermined direction on opposite sides of the xMR sensor element and laterally adjacent to the xMR sensor element. The adjacent magnetically free layers can act as magnetic flux concentrators for the magnetoresistive sensor element arranged therebetween.

Abstract: A method of manufacturing a superconductive integrated circuit on a substrate includes forming a first superconductive layer of a superconductive material over the substrate. A Josephson junction (JJ) layer stack including a JJ barrier layer is formed over the first superconductive layer. The JJ layer stack is structured to form a JJ structure. The first superconductive layer is structured to form a structured first superconductive layer. A dielectric cover layer is formed over the JJ structure. The dielectric cover layer is structured a first time to expose an upper side of the JJ structure. A second superconductive layer of a superconductive material is formed over the dielectric cover layer. The second superconductive layer is structured to form a structured second superconductive layer.

Abstract: The implementation proposes a substrate and a method for heating a magnetoresistive sensor. The substrate includes a wire-on-chip (WoC) layer. The WoC layer has one or more conductive WoC wires for generating a magnetic field, the one or more conductive WoC wires being integrated in a chip plane. The substrate further includes a heating layer. The heating layer has one or more conductive heating wires for increasing a temperature of the substrate.

Abstract: An electronic circuit includes a substrate and a superconducting electronic circuit unit which is constructed on the substrate. The superconducting electronic circuit unit includes a capacitor with parallel plates opposite one another and a crystalline capacitor dielectric arranged between the parallel plates.

Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

Abstract: A semiconductor package includes a lead frame that includes a die pad and a first lead extending away from the die pad, a semiconductor die mounted on the die pad, a load path connection that electrically connects a first load terminal of the semiconductor die with the first lead, and a magnetic sensor arrangement mounted directly on a region of the lead frame which forms part of the load path connection, wherein the magnetic sensor arrangement comprises a magnetic current sensor that is configured to measure a current flowing through the load path connection and an electrical isolation layer that electrically isolates the magnetic current sensor from the lead frame.

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.

Abstract: The present disclosure relates to a magnetic sensor device, including a substrate spanning a plane, a plurality of series-connected TMR resistance elements arranged on the substrate, wherein each of the TMR resistance elements has at least one magnetic tunnel contact and wherein each of the TMR resistance elements has the same reference magnetization. The series-connected TMR resistance elements are arranged and interconnected on the substrate in such a way that an electric current flow direction in the plane relative to the reference magnetization changes at least once along a current path through the series-connected TMR resistance elements.

Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.

Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.

Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.

Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.

Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.

Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.