Patents by Inventor Wolfgang Raberg

Wolfgang Raberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11815532
    Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.
    Type: Grant
    Filed: November 24, 2021
    Date of Patent: November 14, 2023
    Assignee: Infineon Technologies AG
    Inventors: Milan Agrawal, Dominik Durner, Wolfgang Raberg
  • Patent number: 11808791
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: November 7, 2023
    Assignee: Infineon Technologies AG
    Inventors: Guenter Schwarzberger, Sebastian Maerz, Wolfgang Raberg
  • Publication number: 20230324477
    Abstract: The present disclosure relates to a magnetic sensor device, including a substrate spanning a plane, a plurality of series-connected TMR resistance elements arranged on the substrate, wherein each of the TMR resistance elements has at least one magnetic tunnel contact and wherein each of the TMR resistance elements has the same reference magnetization. The series-connected TMR resistance elements are arranged and interconnected on the substrate in such a way that an electric current flow direction in the plane relative to the reference magnetization changes at least once along a current path through the series-connected TMR resistance elements.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 12, 2023
    Inventor: Wolfgang RABERG
  • Patent number: 11761990
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: September 19, 2023
    Assignee: Infineon Technologies AG
    Inventors: Guenter Schwarzberger, Sebastian Maerz, Wolfgang Raberg
  • Publication number: 20230160929
    Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.
    Type: Application
    Filed: November 24, 2021
    Publication date: May 25, 2023
    Inventors: Milan Agrawal, Dominik Durner, Wolfgang Raberg
  • Publication number: 20230066358
    Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: Dieter Suess, Udo Ausserlechner, Armin Satz, Klemens Pruegl, Wolfgang Raberg, Milan Agrawal, Johannes Guettinger, Michael Kirsch
  • Publication number: 20230034717
    Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.
    Type: Application
    Filed: October 11, 2022
    Publication date: February 2, 2023
    Inventors: Juergen Zimmer, Wolfgang Raberg
  • Patent number: 11519977
    Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: December 6, 2022
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Raberg, Clemens Muehlenhoff, Juergen Zimmer
  • Patent number: 11506732
    Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: November 22, 2022
    Assignee: Infineon Technologies AG
    Inventors: Juergen Zimmer, Wolfgang Raberg
  • Publication number: 20220334148
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 20, 2022
    Applicant: Infineon Technologies AG
    Inventors: Guenter SCHWARZBERGER, Sebastian MAERZ, Wolfgang RABERG
  • Patent number: 11467232
    Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: October 11, 2022
    Assignee: Infineon Technologies AG
    Inventors: Clemens Muehlenhoff, Wolfgang Raberg, Dieter Suess
  • Patent number: 11467188
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: October 11, 2022
    Inventors: Guenter Schwarzberger, Sebastian Maerz, Wolfgang Raberg
  • Patent number: 11346880
    Abstract: A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: May 31, 2022
    Inventors: Anton Mauder, Thomas Kimmer, Wolfgang Raberg, Mitja Rebec
  • Patent number: 11333721
    Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: May 17, 2022
    Assignee: Infineon Technologies AG
    Inventors: Juergen Zimmer, Wolfgang Raberg
  • Patent number: 11335851
    Abstract: Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: May 17, 2022
    Inventor: Wolfgang Raberg
  • Patent number: 11313923
    Abstract: A method includes measuring a first property of a magnetic field using a bridge circuit with spatially separated bridge branches, and measuring a second property of the magnetic field using a magnetic field sensor located between the spatially separated bridge branches.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: April 26, 2022
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Publication number: 20210263079
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Application
    Filed: February 25, 2020
    Publication date: August 26, 2021
    Applicant: Infineon Technologies AG
    Inventors: Guenter SCHWARZBERGER, Sebastian MAERZ, Wolfgang RABERG
  • Patent number: 11047709
    Abstract: A magnetic field sensor includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component, and at least one AMR sensor element configured to sense a second magnetic field component which is perpendicular to the first magnetic field component.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: June 29, 2021
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Raberg
  • Patent number: 10996292
    Abstract: A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. Furthermore, the sensor circuit includes a second magnetoresistor. The second magnetoresistor has a second resistance transfer function. The second resistance transfer function is different from the first resistance transfer function. The first magnetoresistor and the second magnetoresistor are connected in series between a first supply terminal of the sensor circuit and a second supply terminal of the sensor circuit.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: May 4, 2021
    Inventor: Wolfgang Raberg
  • Patent number: 10989769
    Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: April 27, 2021
    Assignee: Infineon Technologies AG
    Inventors: Juergen Zimmer, Armin Satz, Wolfgang Raberg, Hubert Brueckl, Dieter Suess