Abstract: The IGBT (insulated gate bipolar transistor) has a weakly doped drift zone of a first conductivity formed in a weakly doped semiconductor substrate of the same conductivity. A highly doped first well zone of the first conductivity and a highly doped second well zone of a second conductivity are arranged between the drift zone and the semiconductor substrate.

Abstract: The present invention relates to a semiconductor arrangement which has a layer structure with at least one semiconductor chip, a carrier for the semiconductor chip and an electrically insulating insulating layer, the insulating layer comprising nanoparticles of an electrically insulating material.

Abstract: A percutaneous cannula is provided that directs blood into a vessel of a patient. The cannula includes a main cannula portion and a tip portion. The tip portion directs blood-flow in a direction generally counter to the direction of flow through the lumen. The cannula is configured to prevent blood-flow exiting the distal end from immediately discharging against a wall of the vessel.

Abstract: A process for producing an optical film from a polyolefin of the formula: in which R and X are either both hydrogen, or R is methyl and X is a polar group, and n is a number from 10 to 1000.

Abstract: Cyclic substituted aminomethyl compounds of general formula IA and IB, methods for production thereof, intermediates in said production methods, a medicament containing at least one of said cyclic substituted aminomethyl compounds, the use of said cyclic substituted aminomethyl compounds for the production of a medicament, pharmaceutical compositions containing said compounds, and methods for the treatment of pain, incontinence, pruritis, tinnitus aurium and/or diarrhea using said pharmaceutical compositions.

Abstract: An acceleration sensor includes a deflectable pressure measuring diaphragm and a counter-structure, which is deflectable as against the pressure measuring diaphragm. The acceleration sensor includes a detection means for detecting a deflection of the pressure measuring diaphragm as against the counter-structure. Further, a test mass is connected to the pressure measuring diaphragm or the counter-structure in order to be deflected from an idle position depending on an acceleration applied. The deflection of the test mass results in a change of the distance between the pressure measuring diaphragm and the counter-structure, which is detectable by the detection means.

Abstract: An input circuit for an HF-transmitting component 1 of a battery-operated device for the transmission of a data signal aims to reduce the power consumption. For that purpose the fundamental frequency of a reference oscillator 5 is modulated with the digital data signal, the data rate being greater than 20 kchip/s. For smoothing of the modulated reference signal an amplitude limiter 11 and a band pass filter 15 are connected between the reference oscillator 5 and the HF-transmitting component 1.

Abstract: A semiconductor component has a semiconductor substrate, an insulation layer located on the semiconductor substrate, and a semiconductor layer that is arranged on the insulation layer. A first doped terminal zone, a second doped terminal zone, and a drift zone are formed in the semiconductor layer between the first and second terminal zones. At least one of the first and second terminal zones directly adjoins the semiconductor substrate.

Abstract: A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

Abstract: Shaped tampons having varying volumes are provided. A tampon which is formed into a self-sustaining shape has an outer surface, which is substantially serpentine. The tampon also has continually changing volume. The shaped tampons may also have varying average fiber density regions. The shaped tampons may be wrapped in tightly conforming wrappers which optionally aid in maintaining the self-sustaining shape prior to use. Optionally, the shaped tampons may utilize tampon applicators which enable a user to visually see the shape of the tampon prior to use.

Abstract: An extracardiac pumping for supplementing the circulation of blood, including the cardiac output, in a patient without any component thereof being connected to the patient's heart, and methods of using same. One embodiment of the intravascular extracardiac system comprises a pump with inflow and outflow conduits that are sized and configured to be implantable intravascularly through a non-primary vessel, whereby it may positioned where desired within the patient's vasculature. The system comprises a subcardiac pump that may be driven directly or electromagnetically from within or without the patient. The pump is configured to be operated continuously or in a pulsatile fashion, synchronous with the patient's heart, thereby potentially reducing the afterload of the heart.

Abstract: A device for fastening objects such as flat conductor strips to a substrate comprises a pedestal and separate object holders. Each object holder has an object holding portion and a fastening portion by which the object holder is attached to the pedestal.

Abstract: A bipolar high-voltage power component, in particular an IGBT, includes a semiconductor body on which at least two mutually spaced apart electrodes are provided, between which a drift path is formed in a semiconductor region of a first conduction type. Floating zones of a second conduction type, opposite the first conduction type, are provided in the semiconductor region. When the power component is switched on or switched off, the floating zones respectively emit charge carriers of the second conduction type into the semiconductor region or take up the charge carriers from the semiconductor region. The floating zones are connected, through a respective MOS transistor with a channel of the second conduction type or a bipolar transistor with a base of the first conduction type, to active regions of the power component which are connected to the two electrodes.

Abstract: An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the first conductivity type adjoining the first semiconductor zone and doped more weakly than the first semiconductor zone in a region near a front side, a first component region in the body having at least one semiconductor zone of a second conductivity type, a second component region in the body having at least one semiconductor zone of the second conductivity type, and a conversion structure having a semiconductor zone of the second conductivity type and a semiconductor zone of the first conductivity type that are short-circuited and disposed at a distance from the first semiconductor zone between the first and second component regions in the second semiconductor zone.

Abstract: The present invention relates to a high-voltage semiconductor component having a semiconductor substrate of a first conduction type on which a semiconductor layer is provided as a drift path that takes up the reverse voltage of the semiconductor component. The semiconductor layer is either of the first conduction type or of a second conduction type that is opposite the first conduction type. The semiconductor layer is more weakly doped than the semiconductor substrate. Laterally oriented semiconductor regions of the first and second conduction types are alternately provided in the semiconductor layer. Furthermore, the present invention relates to a high-voltage semiconductor component having a MOS field-effect transistor that is formed in a semiconductor substrate and has a drift path that is connected to its drain electrode.

Abstract: A multilumen catheter that maximizes the blood flow into and out of the patient's vasculature while also providing for passive and/or active perfusion of tissue downstream of where the catheter resides in the vasculature. The inventive catheter comprises a proximal end, a first distal and a second distal end. Lumens extending from the proximal end to each of these distal ends provide for blood circulation within one or between two blood vessels. At least one aperture in one of the lumens positioned near the proximal end provides for active perfusion of blood to the patient's vasculature downstream of where the aperture resides in the vasculature when the catheter is inserted into the patient for treatment. The inventive catheter may comprise a third lumen positioned entirely within the patient's vasculature, providing passive perfusion of blood to the patient's vasculature downstream of where the third lumen resides in the vasculature when the catheter is inserted into the patient for treatment.

Abstract: A method for manufacturing thin-film chip resistors, in which method a resistor layer (14) and a contact layer (15, 16) are applied onto the upper surface of a substrate (10) and structured using laser light so as to form on said substrate (10) a plurality of adjacent, separate resistor lands (24) having a predetermined approximate resistance value, allows the simplified and cheap manufacturing by performing the electrical insulation of the resistor elements (24) and the structuring of the individual resistor lands (24) for the entire resistor land simultaneously by means of a laser-lithographic direct exposure method.

Abstract: A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces or media, in which two absolute pressure measuring devices are monolithically integrated on a single support substrate, in particular on a semiconductor chip. The absolute pressure measuring devices are preferably fabricated by surface micromachining.

Abstract: The present invention relates to an integrated transformer configuration having a first coil formed from an electrically conductive material having a spiral course with an essentially rectangular cross section. The transformer has a second coil with a spiral course. The first and the second coils are arranged such that they are electrically insulated from one another. The ratio between the height and the width of the rectangular cross section of the first coil is greater than 1.

Abstract: An acceleration sensor includes a deflectable pressure measuring diaphragm and a counter-structure, which is deflectable as against the pressure measuring diaphragm. The acceleration sensor includes a detection means for detecting a deflection of the pressure measuring diaphragm as against the counter-structure. Further, a test mass is connected to the pressure measuring diaphragm or the counter-structure in order to be deflected from an idle position depending on an acceleration applied. The deflection of the test mass results in a change of the distance between the pressure measuring diaphragm and the counter-structure, which is detectable by the detection means.