Abstract: An extracardiac pumping for supplementing the circulation of blood, including the cardiac output, in a patient without any component thereof being connected to the patient's heart, and methods of using same. One embodiment of the intravascular extracardiac system comprises a pump with inflow and outflow conduits that are sized and configured to be implantable intravascularly through a non-primary vessel, whereby it may positioned where desired within the patient's vasculature. The system comprises a subcardiac pump that may be driven directly or electromagnetically from within or without the patient. The pump is configured to be operated continuously or in a pulsatile fashion, synchronous with the patient's heart, thereby potentially reducing the afterload of the heart.

Abstract: The present invention relates to a wrapper for individually packaging absorbent articles for personal hygiene, especially tampons. The wrapper of the present invention is provided with an opening means comprising a tear tape and a stopper, the tear tape is used for opening the wrapper and the stopper prevents the wrapper from becoming separated into more than two segments of wrapper material upon being opened.

Abstract: The present invention relates to a wrapper for individually packaging absorbent articles for personal hygiene, especially tampons. The wrapper of the present invention is provided with an opening means, which prevents the wrapper from becoming separated into more than one piece of wrapper material upon being opened.

Abstract: An input circuit for an HF-transmitting component 1 of a battery-operated device for the transmission of a data signal aims to reduce the power consumption. For that purpose the fundamental frequency of a reference oscillator 5 is modulated with the digital data signal, the data rate being greater than 20 kchip/s. For smoothing of the modulated reference signal an amplitude limiter 11 and a band pass filter 15 are connected between the reference oscillator 5 and the HF-transmitting component 1.

Abstract: A semiconductor component includes a first connection zone of a first conductivity type for providing a contact at a first side of a semiconductor body and a second connection zone of the first conductivity type for providing a contact at the second side of the semiconductor body. A drift zone adjoins the first connection zone and extends in a vertical direction of the semiconductor body as far as the second side of the semiconductor body. A body zone of a second conductivity type is disposed between the second connection zone and the first connection zone or the drift zone. A control electrode is insulated from the semiconductor body and disposed above the body zone such that the control electrode substantially does not overlap with the drift zone and the second connection zone in a lateral direction. A method for manufacturing a semiconductor component is also provided.

Abstract: A semiconductor layer with laterally variable doping, and a method for producing it are disclosed. The trenches here are no longer filled up completely with doped semiconductor material. Instead, a doped balancing layer is deposited in a sense as a lining on the walls of the trenches. The doped balancing layer has a defined layer thickness that remains constant over an entire depth of the trenches. Furthermore, both a dopant concentration and the layer thickness of the balancing layer are adjusted such that a complete charge required for compensation is already contained in the balancing layer. The trenches here can advantageously have an arbitrarily great berm angle. The invention is especially advantageous in a peripheral region of semiconductor components with high depletion voltage strength.

Abstract: Shaped tampons having varying volumes are provided. A tampon which is formed into a self-sustaining shape has an outer surface, which is substantially serpentine. The tampon also has continually changing volume. The shaped tampons may also have varying average fiber density regions. The shaped tampons may be wrapped in tightly conforming wrappers which optionally aid in maintaining the self-sustaining shape prior to use. Optionally, the shaped tampons may utilize tampon applicators which enable a user to visually see the shape of the tampon prior to use.

Abstract: Shaped tampons having varying perimeters are provided. Tampons disclosed comprise a mass of absorbent material formed into a self-sustaining shape comprising an insertion end, a withdrawal end, and a center region. The center region has at least one perimeter which is less than a largest insertion end perimeter and is less than a withdrawal end perimeter. The shaped tampons may also have varying average fiber density regions. The shaped tampons may be wrapped in tightly conforming wrappers which optionally aid in maintaining the self-sustaining shape prior to use. Optionally, the shaped tampons may utilize tampon applicators which enable a user to visually see the shape of the tampon prior to use.

Abstract: Cyclic substituted aminomethyl compounds of general formula IA and IB, methods for production thereof, intermediates in said production methods, a medicament containing at least one of said cyclic substituted aminomethyl compounds, the use of said cyclic substituted aminomethyl compounds for the production of a medicament, pharmaceutical compositions containing said compounds, and methods for the treatment of pain, incontinence, pruritis, tinnitus aurium and/or diarrhea using said pharmaceutical compositions.

Abstract: An extracardiac pumping for supplementing the circulation of blood, including the cardiac output, in a patient without any component thereof being connected to the patient's heart, and methods of using same. One embodiment of the intravascular extracardiac system comprises a pump with inflow and outflow conduits that are sized and configured to be implantable intravascularly through a non-primary vessel, whereby it may positioned where desired within the patient's vasculature. The system comprises a subcardiac pump that may be driven directly or electromagnetically from within or without the patient. The pump is configured to be operated continuously or in a pulsatile fashion, synchronous with the patient's heart, thereby potentially reducing the afterload of the heart.

Abstract: An integrated circuit configuration includes a semiconductor body having a first semiconductor zone of a first conductivity type in a region near a rear side and a second semiconductor zone of the first conductivity type adjoining the first semiconductor zone and doped more weakly than the first semiconductor zone in a region near a front side, a first component region in the body having at least one semiconductor zone of a second conductivity type, a second component region in the body having at least one semiconductor zone of the second conductivity type, and a conversion structure having a semiconductor zone of the second conductivity type and a semiconductor zone of the first conductivity type that are short-circuited and disposed at a distance from the first semiconductor zone between the first and second component regions in the second semiconductor zone.

Abstract: The method for producing a micromechanical component includes the following steps: producing a semi-finished micromechanical component; producing openings and forming a cavity; sealing the opening with sealing lids; removing material on the top surface of the first membrane layer, the surface of the first membrane layer being exposed and planarized. The invention also relates to a micromechanical component which can be produced according to the above method and to its use in sensors such as pressure sensors, microphones, or acceleration sensors.

Abstract: The present invention relates to a high-voltage semiconductor component having a semiconductor substrate of a first conduction type on which a semiconductor layer is provided as a drift path that takes up the reverse voltage of the semiconductor component. The semiconductor layer is either of the first conduction type or of a second conduction type that is opposite the first conduction type. The semiconductor layer is more weakly doped than the semiconductor substrate. Laterally oriented semiconductor regions of the first and second conduction types are alternately provided in the semiconductor layer. Furthermore, the present invention relates to a high-voltage semiconductor component having a MOS field-effect transistor that is formed in a semiconductor substrate and has a drift path that is connected to its drain electrode.

Abstract: A low impedance VDMOS semiconductor component having a planar gate structure is described. The VDMOS semiconductor component contains a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substantially opposite to one another. A highly doped first zone of the first conductivity type is disposed in an area of the first main surface. A second zone of a second conductivity type separates the first zone from the semiconductor body. The first zone and the second zone have a trench with a bottom formed therein reaching down to the semiconductor body. An insulating material fills the trench at least beyond an edge of the second zone facing the semiconductor body. A region of the second conductivity type surrounds an area of the bottom of the trench.

Abstract: A semiconductor component includes a first connection zone of a first conductivity type for providing a contact at a first side of a semiconductor body and a second connection zone of the first conductivity type for providing a contact at the second side of the semiconductor body. A drift zone adjoins the first connection zone and extends in a vertical direction of the semiconductor body as far as the second side of the semiconductor body. A body zone of a second conductivity type is disposed between the second connection zone and the first connection zone or the drift zone. A control electrode is insulated from the semiconductor body and disposed above the body zone such that the control electrode substantially does not overlap with the drift zone and the second connection zone in a lateral direction. A method for manufacturing a semiconductor component is also provided.

Abstract: The present invention relates to a semiconductor arrangement with a MOS transistor which has a gate electrode (40), arranged in a trench running in the vertical direction of a semiconductor body (100), and a Schottky diode which is connected in parallel with a drain-source path (D-S) and is formed by a Schottky contact between a source electrode and the semiconductor body.

Abstract: The semiconductor switching element blocks in both directions between a first and a second load terminal. The switching element has a field effect transistor and a bipolar transistor. The field effect transistor has a controlled gate, a source connected to the first load terminal, a drain connected to the second load terminal and a body connection. The bipolar transistor has a base, an emitter, and a collector. The emitter is connected to the body connection of the field effect transistor.

Abstract: The invention relates to a semiconductor configuration in which electrodes are insulated by a gas-filled or evacuated cavity. The semiconductor configuration includes at least two rigid electrodes; body regions; an active zone; a drift path; and an insulating device electrically isolating the at least two electrodes from each another. At least one of the at least two electrodes is a trench electrode electrically connected to the active zone. The insulating device includes a structure selected from the group consisting of at least one insulating or holding layer and a pn junction. The insulating device is further formed with at least one cavity. The trench electrode is isolated from the drift path by the cavity and surrounded by the cavity.

Abstract: A multilumen catheter that maximizes the blood flow into and out of the patient's vasculature while also providing for passive and/or active perfusion of tissue downstream of where the catheter resides in the vasculature. The inventive catheter comprises a proximal end, a first distal and a second distal end with first and second lumens extending from the proximal end to each of these distal ends to provide for blood circulation within one blood vessel or between two different blood vessels. The second lumen, and any additional lumens so desired, may be positioned coaxially with or radially around the first lumen. Redirecting means is provided at a distal end of at least one of said lumens for directing blood in a direction generally opposite of the direction of flow through said lumen.

Abstract: A multilumen catheter that maximizes the blood flow into and out of the patient's vasculature while also providing for passive and/or active perfusion of tissue downstream of where the catheter resides in the vasculature. The inventive catheter comprises a proximal end, a first distal and a second distal end. Lumens extending from the proximal end to each of these distal ends provide for blood circulation within one or between two blood vessels. At least one aperture in one of the lumens positioned near the proximal end provides for active perfusion of blood to the patient's vasculature downstream of where the aperture resides in the vasculature when the catheter is inserted into the patient for treatment. The inventive catheter may comprise a third lumen positioned entirely within the patient's vasculature, providing passive perfusion of blood to the patient's vasculature downstream of where the third lumen resides in the vasculature when the catheter is inserted into the patient for treatment.