Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Abstract: The invention relates to a CMOS-compatible lateral DMOS transistor and to a method for producing such a transistor. The aim of the invention is to provide a CMOS-compatible DMOS transistor that can be optionally designed for very high drain voltages or for the power amplification at very high frequencies by choosing the appropriate layout and that can be produced with little additional technical effort as compared to the conventional sub-&mgr;m production technology for CMOS circuits. To this end, a gate insulator of the inventive CMOS-compatible lateral DMOS transistor has a uniform thickness across the entire current-carrying (active) zone below a control gate.

Abstract: A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.

Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Abstract: A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 &mgr;m of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 &mgr;m smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 &mgr;m, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.

Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.

Abstract: A bearing plate for a commutator machine according to the related art is made of metal and comprises an applied brush holder made of plastic. Connector elements for electrical components on the brush holder are inserted in corresponding receptacles in the brush holder in a separate working step, however. In the bearing plate (1) according to the invention, the connector elements (4, 8, 11) are formed out of the bearing plate and are partially connected to the bearing plate (1), thereby reducing the number of parts to be installed as well as the production expense.

Abstract: A process for the chemical-mechanical polishing of silicon wafers is by rotational movement of the silicon surface which is to be polished on a polishing plate which is covered with polishing cloth, with a continuous supply of an alkaline polishing agent which contains abrasives, at least 2 &mgr;m of material being removed from the polished silicon surface during the polishing. Immediately after the polishing has finished, and while maintaining the rotational movement, instead of the polishing agent at least two different stopping agents are supplied in succession, each removing less than 0.5 &mgr;m of material from the polished silicon surface.

Abstract: A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 &mgr;m of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 &mgr;m smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 &mgr;m, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.

Abstract: An apparatus for measuring the viscosity of a fluid having a first rigid member extending from a body of semiconductor material and provided with a first conductive path and a second resiliently flexible member provided with a second conductive path and arranged in cantilever fashion over the rigid member. At least one of the conductive paths may be selectively energized to brig about relative movement between the rigid and flexible member. Subsequent deenergization of the path causes the resiliently flexible member to return to its initial position, the rate of return being measured to derive a signal representative of the viscosity. Also described are methods of carrying out the measurement and of fabricating the apparatus.

Abstract: A pigment-containing oil-based gel material which contains 0.1 to 25% by weight of a hydroxy-fatty acid having 10 to 20 C atoms, 0.1 to 30% by weight of C30-45-alkylmethicone, 1 to 70% by weight of an oil component and 0.1 to 50% by weight of pigments is described.

Abstract: There is a process for producing a semiconductor wafer having a front surface and a back surface and a polished edge, in which the semiconductor wafer is subjected to polishing on both sides.

Abstract: A process for producing a stick-like implement, having a first sleeve, having a second sleeve with an insertion section for insertion into the first sleeve, it being possible for the two sleeves to be rotated with respect to one another in the inserted state, having an externally threaded element which is coupled to the second sleeve in a rotationally fixed but axially displaceable manner and is designed to mesh with an internally threaded element which is coupled to the first sleeve in a rotationally fixed manner, with the result that rotation of the two sleeves with respect to one another results in axial displacement of the externally threaded element in relation to the sleeves, and having a filler element which, in the case of corresponding axial displacement of the externally threaded element on account of rotation of the two sleeves with respect to one another, is pushed out of a sleeve opening.

Abstract: A power plant facility having gas turbines, steam turbines and mixed gas/steam turbines. By use of appropriate networking of the three turbine facilities, an approach to isothermal heat supply and removal is achieved with optimal utilization of waste heat.

Abstract: The present invention pertains to a holding device (4) for holding an electric fan (1), in particular, a minifan, on a mounting wall (2). The invention is characterized by at least one essentially flat holding part (10), one side of which defines a fan contact plane (12), wherein said holding part comprises at least one plug element (14) that projects from the holding part (10) approximately perpendicular to the contact plane (12) and can be positively and/or nonpositively inserted into a mounting hole (16) of the fan (1) as well as at least one pin-like fastening element (22) that projects from the holding part (10) approximately perpendicular to the plug element (14) and can be inserted into a hole (20) in the mounting wall (2).

Abstract: Described is a cosmetic pencil (10) having a casing shank portion (12) and a casing front portion (14). A cosmetic stick (24) is displaceable by of a drive element (22) in relation to the front casing opening (40) of the casing front portion (14). In order to be able to move the cosmetic stick (24) both out of the casing and also back into the casing, the drive element (22) is in the form of a tubular stick holding member (26) which is arranged in the casing front portion (14) movably axially in opposite directions. The cosmetic stick (24) which projects out of the stick holding member (26) is fixed with a rear fixing portion (42) in the stick holding member (26).

Abstract: Described is an application system (10) having an applicator (16) and a container (12) in which a liquid application medium (14) is disposed. The applicator (16) has a handle (18) and an applicator member (20) which can be wetted with the liquid application medium, and it can be introduced into the container (12) through an opening (26), with the applicator member (20) leading. Starting from the opening (26), extending into the container (12) is a sleeve (32) which is sealingly fixed to the container (12) with its upper end portion (36) and which at a middle portion (42) is provided with at least one aperture (44) through which the inside of the sleeve (32) is communicated with the interior of the container (12), which surrounds the sleeve (32). The sleeve (32) is also provided with a shaping portion (48) which serves for re-shaping the applicator member (20).

Abstract: A method of fabricating a semiconductor device. A series of layers is deposited on a semiconductor substrate of a first conductivity type to form a shielding arrangement, including an upper part and a lower part, to provide a shield against accelerated ions. This is followed by forming openings in the shielding arrangement by microlithographic processes and anisotropic etching, and then implanting ions via the openings to form one of a base area and a base-connection area of the first conductivity type. Edges of the openings are displaced by isotropic etching of the lower part of the shielding arrangement.

Abstract: A pencil, in particular for cosmetic purposes, is made by casting a stick composition into a tubular body, which forms the shaft of the pencil and is preferably seamless, in such a way that a ready-to-use exposed stick point is formed during casting. The shaft may be of wood or plastics. In the case of a wooden shaft, a solid wooden rod of twice the shaft length may be bored out and otherwise worked and then separated along a central plane transverse to the axis of the rod to form a pair of shafts into which the stick composition can subsequently be cast.

Abstract: A color television receiver has an automatic adjustment system. The receiver includes a digital control unit for controlling the vertical deflection and the horizontal deflection outputs. The digital control unit contains a line counter, a programmable read only memory and a logic circuit which controls the outputs of the receiver. A sensor system serves for the automatic adjustment, which sensor system is arranged in front of the picture tube and which transmits the rated magnitudes to the programmable read only memory by means of an adjustment computer.