Patents by Inventor Won-bong Choi

Won-bong Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6616497
    Abstract: A method of manufacturing a carbon nanotube field emitter for field emission displays by electrophoresis is disclosed. The method of manufacturing involves: first, loading an electrode plate and the field emitter substrate, which are spaced apart from one another, into an electrophoresis bath containing a carbon nanotube suspension for the electrophoresis; second, applying a predetermined bias voltage from a power supply between the electrode plate and the cathodes of the field emitter substrate to deposit, at room temperature, carbon nanotube particles on the surface of the electrodes exposed through the holes of the dielectric film; and third, drawing the field emitter substrate, on which the carbon nanotube particles have been deposited, out of the electrophoresis bath, and heating the field emitter substrate with carbon nanotube tips at a predetermined temperature. An efficient low-temperature process, incorporating low cost carbon nanotube particles, provides for a lower manufacturing cost.
    Type: Grant
    Filed: June 26, 2000
    Date of Patent: September 9, 2003
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Won-bong Choi, Hoon-young Kim, Deuk-seok Chung, Jung-ho Kang
  • Publication number: 20030153151
    Abstract: Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.
    Type: Application
    Filed: August 22, 2002
    Publication date: August 14, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, Soo-doo Chae
  • Publication number: 20030134267
    Abstract: Provided is a sensor for detecting a biomolecule, and particularly, a sensor for detecting a biomolecule, including (a) a substrate; and (b) a plurality of carbon nanotubes which are arranged on the substrate and provide a binding site for a receptor for a target biomolecule. With the biomolecular sensor, a various kinds of disease-associated biomolecules can be detected simultaneously, accurately and quickly.
    Type: Application
    Filed: September 27, 2002
    Publication date: July 17, 2003
    Inventors: Seong-Ho Kang, Yukeun Eugene Pak, Won-Bong Choi
  • Publication number: 20030119034
    Abstract: A biochip and a method for separating a target substance contained in a sample on the biochip are disclosed. The biochip comprises a substrate, a sample loading portion disposed on the substrate, a channel in fluid communication with the sample loading portion, and carbon nanotubes arrayed in intervals in the channel. The sample is loaded on the sample loading portion and flowed through the channel. The target substance is selectively separated from the sample according to the interval sizes between the carbon nanotubes. According to the present invention, various substances in a sample may be easily separated or filtered by flowing through the channel having the carbon nanotubes, and thus, sample contamination and/or experimental error are reduced.
    Type: Application
    Filed: September 25, 2002
    Publication date: June 26, 2003
    Inventors: Seong-ho Kang, Yukeun Eugene Pak, Won-bong Choi
  • Patent number: 6566704
    Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: May 20, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, Jo-won Lee, Young-hee Lee
  • Publication number: 20030058749
    Abstract: A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.
    Type: Application
    Filed: September 23, 2002
    Publication date: March 27, 2003
    Inventors: In-Kyeong Yoo, Won-Bong Choi, Hyun-Jung Shin
  • Publication number: 20030053399
    Abstract: A high-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same are provided. The high-density information storage apparatus includes a lower electrode, a photoconductive layer and a recording medium sequentially provided on the lower electrode, a conductive layer converting unit for making the photoconductive layer conductive, a data write and read unit for writing data to the recording medium or reading data from the recording medium, a data loss preventing unit for preventing loss of data during data write and read operations, and a power supply connected to the lower electrode and the data write and read unit, for supplying voltage necessary for reading and writing data.
    Type: Application
    Filed: March 6, 2002
    Publication date: March 20, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: In-kyeong Yoo, Won-bong Choi, Byong-man Kim
  • Publication number: 20020197752
    Abstract: A field emission array (FEA) using carbon nanotubes having characteristics of low work function, durability and thermal stability, and a method for fabricating the same are provided. The field emission array uses carbon nanotubes as electron emission sources, thereby lowering a work function and dropping driving voltage. Accordingly, a device can be driven at low voltage. In addition, resistance to gases, which are generated during the operation of a device, is improved, thereby increasing the life span of an emitter. The method prints a mixed paste using extrusion or screen printing and performs sintering, thereby fusing carbon nanotubes such that the carbon nanotubes are aligned in a single direction.
    Type: Application
    Filed: July 10, 2002
    Publication date: December 26, 2002
    Inventor: Won-bong Choi
  • Publication number: 20020182542
    Abstract: An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
    Type: Application
    Filed: June 4, 2002
    Publication date: December 5, 2002
    Inventors: Won-Bong Choi, In-Kyeong Yoo
  • Patent number: 6440761
    Abstract: A field emission array (FEA) using carbon nanotubes having characteristics of low work function, durability and thermal stability, and a method for fabricating the same are provided. The field emission array uses carbon nanotubes as electron emission sources, thereby lowering a work function and dropping driving voltage. Accordingly, a device can be driven at low voltage. In addition, resistance to gases, which are generated during the operation of a device, is improved, thereby increasing the life span of an emitter. The method prints a mixed paste using extrusion or screen printing and performs sintering, thereby fusing carbon nanotubes such that the carbon nanotubes are aligned in a single direction.
    Type: Grant
    Filed: May 12, 2000
    Date of Patent: August 27, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Won-bong Choi
  • Publication number: 20020011769
    Abstract: A field emission array adopting carbon nanotubes as an electron emitter source and a method for fabricating same, wherein the fabrication method includes forming a rear substrate assembly including cathodes formed as stripes over a rear substrate, and carbon nanotubes; forming a front substrate assembly including anodes formed as stripes over a front substrate; depositing phosphors on the anodes; forming a plurality of openings separated by a predetermined distance in a nonconductive plate, corresponding to the anodes, and forming gates as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings; supporting and separating the nonconductive plate from the rear substrate by a predetermined distance, using spacers; combining the rear substrate assembly with the front substrate assembly so the carbon nanotubes on the cathodes project through the emitter openings at a predetermined distance from the gates.
    Type: Application
    Filed: April 19, 2001
    Publication date: January 31, 2002
    Inventors: Won-bong Choi, Min-Jae Yun, Yong-wan Jin
  • Publication number: 20020001905
    Abstract: The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.
    Type: Application
    Filed: June 27, 2001
    Publication date: January 3, 2002
    Inventors: Won-bong Choi, Jo-won Lee, Young-hee Lee