Abstract: An LED package comprises a frame having a concave portion formed in the center thereof; one or more LED chips mounted on the bottom surface of the concave portion; and a lens filled in the concave portion, the lens having an upper surface formed of continuous prismatic irregularities forming concentric circles.

Abstract: A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

Abstract: Disclosed herein is a touch panel. A touch panel according to a first preferred embodiment of the present invention includes: a base member; a transparent electrode formed in an active area of the base member; an insulator formed in a bezel area of the base member, and convexly protruded from the base member; and an electrode wiring formed on an exposed surface of the insulator. In addition, a touch panel according to a second preferred embodiment of the present invention includes: a base member having a groove portion formed such that an exposed surface thereof has a concave curved surface; a transparent electrode formed in an active area; and an electrode wire connected to one end or both ends of the transparent electrode and formed on the exposed surface of the groove portion.

Abstract: Disclosed is a capacitive touch panel, which includes a transparent substrate, transparent electrodes formed on one surface of the transparent substrate, and electrode wires formed on the other surface of the transparent substrate, wherein the transparent substrate includes through holes which are formed therethrough and are filled with a filler so that the transparent electrodes are electrically connected with the electrode wires, and in which the patterned transparent electrodes are connected with the electrode wires by the through holes formed on the transparent electrodes, thus increasing the force of adhesion between the electrode wires and the transparent electrodes, and also, the through holes are filled with a filler and thus the transparent electrodes and the electrode wires are electrically connected with each other, thus reducing contact resistance.

Abstract: Disclosed herein is a touch screen including a touch panel and a window disposed at a top side of the touch panel. In particular, a groove part is formed in the window or the lower substrate and the touch panel is configured in the groove part to reduce an interface of the touch panel, exposed to the outside, thereby making it possible to prevent infiltration of moisture and oil.

Abstract: Disclosed herein is a touch panel. The touch panel includes a transparent substrate and a plurality of transparent electrodes. The transparent electrodes are formed on one surface of the transparent substrate. Each of the transparent electrodes includes a touch part formed to have an identical width and a connection part configured in a stepped form along with the touch part and configured to connect the touch part with the transparent substrate.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: Provided is a method of manufacturing a nanowire capacitor including forming a lower metal layer on a substrate; growing conductive nanowires on the lower metal layer, the conductive nanowires including metal and transparent electrodes; depositing a dielectric layer on the lower metal layer including the grown conductive nanowires; growing dielectric nanowires on the deposited dielectric layer; and depositing an upper metal layer on the dielectric layer including the grown dielectric nanowires.

Abstract: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.

Abstract: An optical coupler including: a substrate; a cladding layer formed on the substrate; and a slab waveguide formed on the cladding layer, wherein the slab waveguide comprises a first waveguide area on which a laser beam is incident and a second waveguide area having an incident surface capable of converging and outputting the laser beam passing through the first waveguide in a width direction. The optical coupler may optically couple one of an optical fiber and a laser diode with the slab waveguide, and more particularly, and a photonic crystal waveguide, with high efficiency.

Abstract: There is provided a solar cell including: a substrate; and an energy absorption structure formed on the substrate, the energy absorption structure including a metal layer, a semiconductor layer and an insulator formed therebetween, wherein at least one of the metal layer, the semiconductor layer and the insulator is formed of a plurality of nanowire structures. The solar cell has the energy absorption structure formed of a nanowire MIS junction structure to ensure high photoelectric conversion efficiency. Further, the solar cell does not require an epitaxial growth, thereby free from drawbacks of an epitaxial layer such as crystal defects.

Abstract: There is provided a solar cell including: a substrate; an energy absorption layer formed on the substrate and having a plurality of nanowire structures, each of the nanowire structures including an n-type semiconductor and a p-type semiconductor joined together; and n-type and p-type electrodes electrically connected to the n-type and p-type semiconductors, respectively. The solar cell exhibits high photoelectric efficiency due to pn junction of the nanowire structures. Further, the solar cell can absorb light falling within a substantially whole range of solar spectrum and does not require an epitaxial growth process, thereby overcoming drawbacks of an epitaxial layer such as crystal defect.

Abstract: An optical coupler including: a substrate; a cladding layer formed on the substrate; and a slab waveguide formed on the cladding layer, wherein the slab waveguide comprises a first waveguide area on which a laser beam is incident and a second waveguide area having an incident surface capable of converging and outputting the laser beam passing through the first waveguide in a width direction. The optical coupler may optically couple one of an optical fiber and a laser diode with the slab waveguide, and more particularly, and a photonic crystal waveguide, with high efficiency.

Abstract: A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.

Abstract: There is provided a light emitting device that can reduce the size of a light emitting device module by using a more simplified light emitting device that directly uses an alternating current source, prevent a decrease in luminous efficiency that is caused due to the use of a separate driving device, solve a problem with an ohmic contact of a p-type electrode, reduce the number of electrodes, and secure a larger area of light emission.