Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.

Abstract: An LED package comprises a frame having a concave portion formed in the center thereof; one or more LED chips mounted on the bottom surface of the concave portion; and a lens filled in the concave portion, the lens having an upper surface formed of continuous prismatic irregularities forming concentric circles.

Abstract: Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.

Abstract: A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.