Patents by Inventor Won-Joo Kim

Won-Joo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10988834
    Abstract: The present invention relates to a high-entropy alloy especially having excellent low-temperature tensile strength and elongation by means of having configured, through thermodynamic calculations, an alloy composition region having an FCC single-phase microstructure at 700° C. or higher, and enabling the FCC single-phase microstructure at room temperature and at an ultra-low temperature. The high-entropy alloy, according to the present invention, comprises: Cr: 3-18 at %; Fe: 3-60 at %; Mn: 3-40 at% ; Ni: 20-80 at %: 3-12 at %; and unavoidable impurities, wherein the ratio of the V content to the Ni content (V/Ni) is 0.5 or less.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: April 27, 2021
    Assignees: POSTECH ACADEMY-INDUSTRY FOUNDATION, THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY
    Inventors: Byeong-joo Lee, Sung-hak Lee, Hyoung-seop Kim, Young-sang Na, Sun-ig Hong, Won-mi Choi, Chang-woo Jeon, Seung-mun Jung
  • Publication number: 20210119161
    Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
    Type: Application
    Filed: October 16, 2020
    Publication date: April 22, 2021
    Inventors: Moon Gyu HAN, Heejae LEE, Eun Joo JANG, Tae Ho KIM, Kun Su PARK, Won Sik YOON, Hyo Sook JANG
  • Patent number: 10863850
    Abstract: An electric cooker is configured to cook food in a pressurized state and a non-pressurized state of an inner pot, thereby improving the cooking quality and convenience of use. The electric cooker includes a main body having an inner pot configured to accommodate food and a heating unit; a lid coupled to an upper portion of the main body and opened/closed by an opening/closing unit; and a pressure switching selection unit arranged to pass through the lid and configured to switch or maintain opened/closed states to discharge internal steam from the inner pot by interworking with the opening/closing unit.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: December 15, 2020
    Assignee: CUCKOO ELECTRONICS CO., LTD.
    Inventors: Won Young Kim, Won Joo Kim, Seung Yun Kim, Jun Seok Oh
  • Publication number: 20190255094
    Abstract: According to an aspect, provided are: a guide RNA; a vector comprising the same; a composition for removing a nucleic acid sequence encoding a KRAS polypeptide in the genome of a cell, containing the same; a composition for preventing or treating cancer, containing the same; and a method using the same. The present invention enables the mutation of a nucleic acid sequence encoding a KRAS polypeptide in the genome of a cell or a subject and, particularly, can be usable, as personalized or precision medical care, in the prevention or treatment of cancer.
    Type: Application
    Filed: October 16, 2017
    Publication date: August 22, 2019
    Inventors: Hyong Bum KIM, Won Joo KIM, Han Sang KIM
  • Publication number: 20190115533
    Abstract: A method for producing layers of ReRAM memories includes applying a TMO layer to a lower electrode, and implanting, via ion implantation, impurity atoms in the TMO layer.
    Type: Application
    Filed: March 31, 2017
    Publication date: April 18, 2019
    Inventors: Rene Borowski, Won Joo Kim, Vikas Rana, Rainer Waser
  • Publication number: 20190069706
    Abstract: An electric cooker is configured to cook food in a pressurized state and a non-pressurized state of an inner pot, thereby improving the cooking quality and convenience of use. The electric cooker includes a main body having an inner pot configured to accommodate food and a heating unit; a lid coupled to an upper portion of the main body and opened/closed by an opening/closing unit; and a pressure switching selection unit arranged to pass through the lid and configured to switch or maintain opened/closed states to discharge internal steam from the inner pot by interworking with the opening/closing unit.
    Type: Application
    Filed: July 27, 2018
    Publication date: March 7, 2019
    Inventors: Won Young Kim, Won Joo Kim, Seung Yun Kim, Jun Seok Oh
  • Patent number: 9829983
    Abstract: A mobile system may comprise a three-dimensional (3D) image sensor on a first surface of the mobile system configured to perform a first sensing to detect proximity of a subject and a second sensing to recognize a gesture of the subject by acquiring distance information for the subject; and/or a display device on the first surface of the mobile system to display results of the first sensing and the second sensing. A mobile system may comprise a light source unit; a plurality of depth pixels; and/or a plurality of color pixels. The light source unit, the plurality of depth pixels, or the plurality of color pixels may be activated based on an operation mode of the mobile system.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: November 28, 2017
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Yoon-Dong Park, Won-Joo Kim, Young-Gu Jin, Dong-Wook Kwon, Kyung-Il Kim, Min-Ho Kim, Gi-Sang Lee, Sang-Bo Lee, Jin-Kyung Lee, Jin-Wuk Choi
  • Patent number: 9711675
    Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: July 18, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seoung-hyun Kim, Won-joo Kim, Young-gu Jin
  • Patent number: 9118856
    Abstract: An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: August 25, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won Joo Kim, Hyoung Soo Ko, Doo Cheol Park, Hee Woo Park, Kwang-Min Lee, Ju Hwan Jung
  • Patent number: 9103722
    Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: August 11, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-Soo Ko, Shin-Wook Yi, Won-Joo Kim, Ju-Hwan Jung
  • Patent number: 9035309
    Abstract: A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: May 19, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-soo Park, Won-joo Kim, Kyoo-chul Cho, Gi-jung Kim, Sam-jong Choi
  • Patent number: 9029785
    Abstract: A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: May 12, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Doo Cheol Park, Seung Hyuk Chang, Myung-Sun Kim, Won Joo Kim, Ju Hwan Jung, Seung Hoon Lee, Kwang-Min Lee, Hyoung Soo Ko
  • Publication number: 20150122973
    Abstract: Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor.
    Type: Application
    Filed: November 5, 2014
    Publication date: May 7, 2015
    Inventors: Seoung-hyun Kim, Won-joo Kim, Young-gu Jin
  • Publication number: 20150069244
    Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.
    Type: Application
    Filed: November 14, 2014
    Publication date: March 12, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyoung-Soo KO, Shin-Wook YI, Won-Joo KIM, Ju-Hwan JUNG
  • Patent number: 8901498
    Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyoung-Soo Ko, Shin-Wook Yi, Won-Joo Kim, Ju-Hwan Jung
  • Publication number: 20140111423
    Abstract: A mobile system may comprise a three-dimensional (3D) image sensor on a first surface of the mobile system configured to perform a first sensing to detect proximity of a subject and a second sensing to recognize a gesture of the subject by acquiring distance information for the subject; and/or a display device on the first surface of the mobile system to display results of the first sensing and the second sensing. A mobile system may comprise a light source unit; a plurality of depth pixels; and/or a plurality of color pixels. The light source unit, the plurality of depth pixels, or the plurality of color pixels may be activated based on an operation mode of the mobile system.
    Type: Application
    Filed: October 23, 2013
    Publication date: April 24, 2014
    Inventors: Yoon-Dong PARK, Won-Joo KIM, Young-Gu JIN, Dong-Wook KWON, Kyung-Il KIM, Min-Ho KIM, Gi-Sang LEE, Sang-Bo LEE, Jin-Kyung LEE, Jin-Wuk CHOI
  • Publication number: 20140015932
    Abstract: A 3D image sensor includes a first color filter configured to pass wavelengths of a first region of visible light and wavelengths of infrared light; a second color filter configured to pass wavelengths of a second region of visible light and the wavelengths of infrared light; and an infrared sensor configured to detect the wavelengths of infrared light passed through the first color filter.
    Type: Application
    Filed: July 12, 2013
    Publication date: January 16, 2014
    Inventors: Won Joo KIM, Doo Cheol PARK, Yoon Dong PARK, Jung Bin YUN, Kwang Min LEE
  • Patent number: 8624665
    Abstract: Provided is a method of operating a semiconductor device, wherein an operating mode is set by adjusting timing of a voltage pulse or by adjusting a voltage level of the voltage pulse.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: January 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-moo Choi, Won-joo Kim, Tae-hee Lee, Dae-kil Cha
  • Patent number: 8541841
    Abstract: Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: September 24, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-joo Kim, Sang-moo Choi, Tae-hee Lee, Yoon-dong Park
  • Patent number: 8385122
    Abstract: Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-joo Kim, Yoon-dong Park, Jung-hun Sung, Yong-koo Kyoung, Sang-moo Choi, Tae-hee Lee