Abstract: Disclosed is a supporting device for a display device displaying an image, which includes a multi-joint arm including at least one joint, a hinge connected to one end of the multi-joint arm and rotatably coupled with the display device about a rotation axis extending in the front-rear direction of the display device, a damper to restrict rotation of the hinge to a certain extent to shorten a rotation time of the hinge when the hinge is rotated, and a brake to fix the hinge when the rotation of the hinge is finished, wherein the hinge is disposed on the same plane as the center of gravity of the display device in a vertical direction of the display device.

Abstract: A selective catalytic reduction system includes a reducing agent injection module installed in an exhaust pipe through which an exhaust gas is discharged from an engine and configured to inject a reducing agent into the exhaust pipe, a temperature calculator configured to calculate a temperature of the reducing agent injection module using temperature-related information of the reducing agent injection module, and a temperature controller configured to control to increase a reducing agent injection amount of the reducing agent injection module when the calculated temperature.

Abstract: The present disclosure relates to a display device including a process key, and more particularly, to a process key with an improved recognition rate in a display device implementing a narrow bezel. The feature of the present disclosure is such that a process key is divided into and formed as a first key pattern made of a metal material and a second key pattern made of a black matrix material, and the process key is positioned in a green pixel area in which a green color filter pattern is provided among pixels positioned at outermost peripheries corresponding to four corners of an active area of a display panel such that a narrow bezel can be implemented and a recognition rate of the process key can also be improved. Consequently, the display panel can be accurately aligned with manufacturing equipment or other objects such that a process defect can be minimized and process efficiency cab also be improved.

Abstract: A method of enhancing transmittance of waves according to the invention comprises the following steps: (a) generating a plurality of waves each of which has random phase; (b) grouping randomly the plurality of waves into a first group and a second group; (c) introducing the waves onto a disordered medium by fixing phase of waves constituting the first group and varying phase of waves constituting the second group; (d) measuring intensity of the waves based on overlapped waves of the first group and the second group which penetrated the disordered medium according to the phase variation of waves constituting the second group; (e) obtaining phase having the maximum intensity according to the phase variation among intensities measured at the step (d); and (f) adjusting phase of the waves constituting the second group based on phase obtained at the step (e).

Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

Abstract: A memory device includes a memory cell array that includes a plurality of memory cell rows, a temperature sensor that detects a temperature of the memory cell array and generates internal temperature data, a first register that stores external temperature data received from outside of the memory device, and a refresh control unit that determines a skip ratio of refresh commands received at a refresh frequency that corresponds to the external temperature data by comparing the internal temperature data and the external temperature data and performing a refresh operation for the plurality of memory cell rows in response to refresh commands skipped and transmitted based on the skip ratio.

Abstract: Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

Abstract: Disclosed herein is an X-ray detector having impact resistance and an X-ray imaging apparatus including the same. The X-ray imaging apparatus includes an X-ray source configured to generate X-rays and emit the generated X-rays and an X-rays detector configured to detect the X-rays emitted by the X-ray source. The X-ray detector includes a main body, a sensor panel disposed in the main body to convert the X-rays emitted by the X-ray source into electrical signals, a middle block disposed in the main body to support the sensor panel and a buffer member extending between the main body and the middle block and having at least one bent portion.

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

Abstract: A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.

Abstract: A center supporting device for a propeller shaft of a vehicle may include an inner bearing device configured to axially movably support a stub shaft, the stub shaft being connected between a front shaft and a rear shaft of the propeller shaft, an outer bearing device mounted outside the inner bearing device to axially rotatably support the stub shaft, and an insulator mounted in an elastically deformable manner between the outside of the outer bearing device and a bracket fixed to a vehicle body.

Abstract: A selective catalytic reduction system includes a reducing agent injection module installed in an exhaust pipe through which an exhaust gas is discharged from an engine and configured to inject a reducing agent into the exhaust pipe, a temperature calculator configured to calculate a temperature of the reducing agent injection module using temperature-related information of the reducing agent injection module, and a temperature controller configured to control to increase a reducing agent injection amount of the reducing agent injection module when the calculated temperature.

Abstract: A memory device includes a memory bank, a command control logic circuit, a row selection circuit, a refresh controller and a collision controller. The memory bank includes a plurality of memory blocks. The command control logic circuit decodes commands received from a memory controller to generate control signals. The command control logic receives an active command for an access operation during a refresh operation. The row selection circuit performs the access operation and the refresh operation with respect to the memory bank. The refresh controller controls the refresh operation. The collision controller generates a wait signal causing a delay of the access operation based on a result of a comparison of a row address associated with the access operation and a refresh address associated with the refresh operation.

Abstract: A propeller shaft with a locking device is provided to that improve performance upon impact by reducing a collapse load generated during a collision. The propeller shaft with a locking device includes a locking device for selectively coupling an exterior hub and an interior hub thereof. The propeller shaft has a structure that enables sliding between the interior and exterior hubs including a spline portion while the locking device is released by the load during a collision.

Abstract: A method of enhancing transmittance of waves according to the invention comprises the following steps: (a) Generating a plurality of waves each of which has random phase; (b) grouping randomly the plurality of waves into a first group and a second group; (c) introducing the waves onto a disordered medium by fixing phase of waves constituting the first group and varying phase of waves constituting the second group; (d) measuring intensity of the waves based on overlapped waves of the first group and the second group which penetrated the disordered medium according to the phase variation of waves constituting the second group; (e) obtaining phase having the maximum intensity according to the phase variation among intensities measured at the step (d); and (f) adjusting phase of the waves constituting the second group based on phase obtained at the step (e).

Abstract: Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

Abstract: A center supporting device for a propeller shaft of a vehicle may include an inner bearing device configured to axially movably support a stub shaft, the stub shaft being connected between a front shaft and a rear shaft of the propeller shaft, an outer bearing device mounted outside the inner bearing device to axially rotatably support the stub shaft, and an insulator mounted in an elastically deformable manner between the outside of the outer bearing device and a bracket fixed to a vehicle body.

Abstract: A boot unit may comprise a boot that includes a small diameter portion formed at one side, a large diameter portion form at the other side, and a wrinkle portion formed between the small diameter portion and the large diameter portion, a bushing that is integrally formed with an interior circumference or an exterior circumference in a circumferential direction and having a predetermined thickness, and a band that is formed in the bushing along the circumferential direction of the bushing and has substantially a ring shape.

Abstract: A semiconductor apparatus includes a plurality of memory blocks including a plurality of unit memory blocks, respectively, a first area extending in a first direction among areas formed among the plurality of memory blocks, a second area extending in a second direction among the areas formed among the plurality of memory blocks, and a test mode-related circuit block arranged at an edge part of the first area.

Abstract: A propeller shaft for a vehicle includes a shaft having locking protrusions on an outer circumference, a tube having locking grooves on an inner circumference into which the shaft is inserted, the locking grooves engaging with the locking protrusions to form the spline coupling, a dynamic damper inside the tube to correspond to an end of the shaft and absorbing vibrations transmitted from a driving system, and a rubber stopper interposed between an outer circumference of the dynamic damper and the inner circumference of the tube to support the dynamic damper and correspond to the end of the shaft to limit sliding of the tube at normal times. The rubber stopper is broken by a pushing operation of the tube when an impact load greater than a collapse load of the rubber stopper acts on the rubber stopper, thereby permitting the sliding of the tube.