Abstract: An underwater communication apparatus for performing an optical communication with an external device under water includes: a current control unit that modulates first data to be transmitted to the external device into a first current; and a light transmitting unit that transmits light with a wavelength of 450 to 500 nm corresponding to the first current to the external device.

Abstract: A constant velocity joint apparatus for a vehicle may include an outer race, an inner race disposed inside the outer race, and a cage that may be disposed between the inner race and the outer race and has a plurality of ball tracks that may be formed on an spherical inner side of the outer race and an spherical outer side of the inner race to retain balls disposed between the outer race and the inner race, wherein a first ball track-pressing angle applied to the balls from the ball tracks of the outer race and a second ball track-pressing angle applied to the balls from the ball tracks of the inner race may be set different.

Abstract: Provided is a device for measuring a bending angle of a constant velocity joint of a drive shaft, the device including an outer race provided at a drive shaft and having an opening part formed at one end thereof, a permanent magnet mounted in the opening part of the outer race, and a sensor provided on an outer peripheral surface of the drive shaft and interlocking with the permanent magnet to measure a bending angle between the drive shaft and the outer race. Therefore, a size and a direction of the bending angle between the drive shaft and the outer race may be measured, thereby making it possible to improve marketability and stability of a vehicle.

Abstract: A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.

Abstract: Circuits for generating refresh period signals and semiconductor integrated circuits using the same are presented. The refresh period signal generation circuit can include an oscillator, a pulse generation unit, and a signal controller. The oscillator is configured to generate an oscillation signal in response to a refresh duration correction signal. The pulse generation unit is configured to generate a refresh period signal in response to the oscillation signal. The signal controller configured to generate the refresh duration correction signal, which corrects an active time of a refresh duration signal, in response to the oscillation signal.

Abstract: Scalable multi-view image encoding and decoding methods and apparatuses are provided. The scalable multi-view image encoding and decoding methods and apparatuses filter multi-view images input from a plurality of cameras in spatial-axis and in temporal-axis directions using motion compensated temporal filtering (MCTF) or hierarchical B-pictures and scalably code the filtered multi-view.

Abstract: A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.

Abstract: An address counting circuit includes a counter configured to sequentially count from an initial address in response to a clock signal in order to output counted addresses. The address counting circuit also includes a code conversion unit that is configured to output converted addresses such that only one address bit of the converted addresses with respect to the previous converted addresses are toggled to output the converted addresses. The converted addresses output form the code conversion unit do not overlap with one another.

Abstract: Circuits for generating refresh period signals and semiconductor integrated circuits using the same are presented. The refresh period signal generation circuit can include an oscillator, a pulse generation unit, and a signal controller. The oscillator is configured to generate an oscillation signal in response to a refresh duration correction signal. The pulse generation unit is configured to generate a refresh period signal in response to the oscillation signal. The signal controller configured to generate the refresh duration correction signal, which corrects an active time of a refresh duration signal, in response to the oscillation signal.

Abstract: A semiconductor memory apparatus includes first and second bank blocks, a mode generator configured to generate a chip select mode signal used to control an operational mode of the first and second bank blocks, and a controller configured to drive the first and second bank blocks in response to the chip select mode signal, first and second select signals, and a predetermined address signal that are used to control driving of the first and second bank blocks, wherein the controller receives the chip select mode signal having a level used to determine a single chip mode to control operation of the first and second bank blocks in one rank unit, and the first and second bank blocks are selectively activated by using the predetermined address signal.

Abstract: Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.

Abstract: A method of testing a word line using a word line driving circuit comprising; activating a word line by activating a word line driving signal; floating the word line by activating a test mode signal after the activating of the word line; recording data having a predetermined logic value into a memory cell by inputting a write command while the word line is floated; and reading out data from the memory cell by inputting a read command after the recording of data.

Abstract: An address counting circuit includes a counter configured to sequentially count from an initial address in response to a clock signal in order to output counted addresses. The address counting circuit also includes a code conversion unit that is configured to output converted addresses such that only one address bit of the converted addresses with respect to the previous converted addresses are toggled to output the converted addresses. The converted addresses output form the code conversion unit do not overlap with one another.

Abstract: A semiconductor memory apparatus includes first and second bank blocks, a mode generator configured to generate a chip select mode signal used to control an operational mode of the first and second bank blocks, and a controller configured to drive the first and second bank blocks in response to the chip select mode signal, first and second select signals, and a predetermined address signal that are used to control driving of the first and second bank blocks, wherein the controller receives the chip select mode signal having a level used to determine a single chip mode to control operation of the first and second bank blocks in one rank unit, and the first and second bank blocks are selectively activated by using the predetermined address signal.

Abstract: Disclosed is a method of manufacturing a semiconductor device whereby InAs(1-x)Sbx semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, a quantum dot layer is formed between a semiconductor substrate and a semiconductor layer to reduce defects caused by lattice mismatch between the semiconductor layer and the semiconductor layer. The method may improve the growth speed of the semiconductor layer. In addition, because the InSb layer provided by the present invention has an electron mobility greater at room temperature, it may improve the quality and productivity of the semiconductor device.

Abstract: There is provided a distributed Bragg's reflector (DBR) comprising a substrate and an unit distributed Bragg's reflector (DBR) layer, wherein a multi-layer is laminated on the substrate. The unit DBR layer is composed of a multi-layer laminated structure of unit digital-alloy multinary compound semiconductor layer/multinary compound semiconductor layer or unit digital-alloy multinary compound semiconductor layer/unit digital-alloy multinary compound semiconductor layer. The unit digital-alloy multinary compound semiconductor layer is composed of the multi-layer laminated structure of the first layer of multinary compound semiconductor and the second layer of a different multinary compound semiconductor on said first layer. The digital-alloy distributed Bragg's reflector of the present invention has a uniform quality on the substance area and the filter and reflector having uniformly high quality can be mass produced by using the reflector.

Abstract: A sense amplifier screen circuit and a screen method thereof are disclosed. The sense amplifier screen circuit includes a test mode signal generator for generating a test mode signal, a voltage regulator for regulating a bit line precharge voltage in response to the test mode signal, and a driving controller for generating a sense amplifier drive signal and a bit line equalize signal in response to the test mode signal.

Abstract: A fuse information control device having a delay circuit to delay an active signal, includes a fuse circuit that outputs fuse information in response to a fuse information control signal, and a fuse information control signal generating unit that generates the fuse information control signal in response to one of the active signal and internal delay signals of the delay circuit.

Abstract: An indoor unit of an air conditioner is provided. The indoor unit includes a main chassis constituting a rear appearance, a heat exchanger and a fan disposed in an inner space of the main chassis, and a front frame formed on a front of the main chassis and constituting a front appearance. The front frame includes a suction port for sucking air of a space for air-conditioning, a high-performance filter-mount part formed on one side of the suction port for fixing the high performance filter, a dust-collecting filter-fixing part formed on one side of the high-performance filter-mount part for fixing the dust-collecting filter, and a discharge port formed on one side of the dust-collecting filter-fixing part for discharging air that has been sucked to the suction port.

Abstract: Disclosed is a method of manufacturing a semiconductor device whereby InAs(1-x)Sbx semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, a quantum dot layer is formed between a semiconductor substrate and a semiconductor layer to reduce defects caused by lattice mismatch between the semiconductor layer and the semiconductor layer. The method may improve the growth speed of the semiconductor layer. In addition, because the InSb layer provided by the present invention has an electron mobility greater at room temperature, it may improve the quality and productivity of the semiconductor device.