Abstract: Provided is to an epoxy coating composition having excellent acid resistance and workability. The epoxy coating composition of the present invention has excellent acid resistance and appearance, and at the same time, is capable of being coated into a thin film by using a roller, and thus, has excellent workability and enables easy repair coating. The epoxy coating composition of the present invention is applicable as a coating for buildings, such as concrete flooring, and the like.

Abstract: Proposed is a method for product recommendation by a server. The method may include receiving a gift recommendation request from a first user terminal for a second user, checking available basic information of the second user, and determining a first recommendation information based on the basic information, wherein the first recommendation information comprises a first recommendation reason and at least one product related to the first recommendation reason. The method may also include determining a second recommendation information not based on the basic information, wherein the second recommendation information comprises a second recommendation reason and at least one product related to the second recommendation reason. The method may further include providing recommendation information comprising the first and second recommendation information to the first user terminal. The first recommendation information may be prioritized for display over the second recommendation information.

Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P1) to a second pressure (P2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A vacuum cleaner is provided, which includes a main body; a dust collection unit arranged in the main body to collect dusts from air that flows into the main body along an intake passage; and a suction unit arranged at a downstream that is lower than a location of the dust collection unit on the intake passage to provide a suction force, wherein the suction unit includes a suction force generator, an exhaust passage configured to switch a discharge direction of the air that has passed through the suction force generator at least twice, and a plurality of sound-absorbing members arranged on the exhaust passage to pass the air therethrough.

Abstract: A vacuum cleaner is provided, which includes a main body; a dust collection unit arranged in the main body to collect dusts from air that flows into the main body along an intake passage; and a suction unit arranged at a downstream that is lower than a location of the dust collection unit on the intake passage to provide a suction force, wherein the suction unit includes a suction force generator, an exhaust passage configured to switch a discharge direction of the air that has passed through the suction force generator at least twice, and a plurality of sound-absorbing members arranged on the exhaust passage to pass the air therethrough.

Abstract: With regard to a distortion correction apparatus and method which are applicable to hardware for real-time distortion correction, provided are a distorted image correction apparatus and method for correcting a distortion of an image by using a non-polynomial estimation function suitable for a hardware operation, and for correcting the distortion of the image by utilizing a morphing form.

Abstract: A refrigerator includes: a body; a storage compartment formed in the body; and a cold air generating unit installed in the storage compartment and including a heat exchanger for generating cold air, wherein the heat exchanger includes: a tube, which forms a heat-exchanging space and extends in one direction and in which a refrigerant flows; heat-exchanging fins disposed to be in contact with the tube in the heat-exchanging space; headers connected to one side and the other side of the tube, respectively; and a refrigerant pipe connected to the headers so that the refrigerant is introduced into/discharged from the tube, and a plurality of flow paths on which the refrigerant flows, are formed in the tube.

Abstract: With regard to a distortion correction apparatus and method which are applicable to hardware for real-time distortion correction, provided are a distorted image correction apparatus and method for correcting a distortion of an image by using a non-polynomial estimation function suitable for a hardware operation, and for correcting the distortion of the image by utilizing a morphing form.

Abstract: A catalyst for reforming hydrocarbons may include a catalytically active amount of nickel or nickel oxide dispersed on a metal oxide support. The metal oxide support may be of a single-metal oxide of a first metal or a complex-metal oxide of the first metal and a second metal. A co-catalyst of magnesium oxide (MgO) may anchor the nickel or nickel oxide onto the metal oxide support.

Abstract: A catalyst for reforming hydrocarbons may include a catalytically active amount of nickel or nickel oxide dispersed on a metal oxide support. The metal oxide support may be of a single-metal oxide of a first metal or a complex-metal oxide of the first metal and a second metal. A co-catalyst of magnesium oxide (MgO) may anchor the nickel or nickel oxide onto the metal oxide support.

Abstract: In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.

Abstract: A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.

Abstract: A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.