Abstract: Provided are a method and apparatus for providing a network switching service to a user equipment.

Abstract: Provided are a method and apparatus for a user equipment, a core network, and a second device to enable bidirectional communication for second devices. The method of the second device may include receiving internet protocol (IP) configuration information for automatically configuring an IP version 6 (IPv6) address of the second device from a core network through a user equipment; generating the IPv6 address using information in the IP configuration information; and transmitting the generated IPv6 address to the core network through the UE.

Abstract: A gene amplification chip includes a chamber layer, a cover layer, a bottom layer, an inlet, and an outlet. The chamber layer has a first passage and through holes which are formed on one side of the first passage. The cover layer is disposed on one side of the chamber layer and has a cover channel formed to communicate with the first passage and the through holes, wherein the cover channel, the first passage and the through holes allow passage of liquids in a divided manner. The bottom layer is disposed on another side of the chamber layer and has a bottom channel formed to communicate with the first passage and the through holes. The inlet is formed in the cover layer and communicates with the cover channel. The outlet communicates with any one of the cover channel and the bottom channel.

Abstract: Provided are a method and apparatus for providing a multi virtual local area network service to user equipments.

Abstract: There is provided a method for providing driver's driving information of a user terminal device, including accessing a driving information providing server storing data generated in a driving recording device for a vehicle, receiving driving record data including event record data corresponding to a driving-related event of a driver from the driving information providing server, and displaying a driving-related event occurrence location on a map using the received driving record data. The driving-related event may include at least two or more of a lane departure event, a forward collision possibility event, a rear side collision possibility event, a sudden deceleration event, a sudden acceleration event, a sudden stop event, a sudden start event, and a speeding event.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P1) to a second pressure (P2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A vacuum cleaner is provided, which includes a main body; a dust collection unit arranged in the main body to collect dusts from air that flows into the main body along an intake passage; and a suction unit arranged at a downstream that is lower than a location of the dust collection unit on the intake passage to provide a suction force, wherein the suction unit includes a suction force generator, an exhaust passage configured to switch a discharge direction of the air that has passed through the suction force generator at least twice, and a plurality of sound-absorbing members arranged on the exhaust passage to pass the air therethrough.

Abstract: A vacuum cleaner is provided, which includes a main body; a dust collection unit arranged in the main body to collect dusts from air that flows into the main body along an intake passage; and a suction unit arranged at a downstream that is lower than a location of the dust collection unit on the intake passage to provide a suction force, wherein the suction unit includes a suction force generator, an exhaust passage configured to switch a discharge direction of the air that has passed through the suction force generator at least twice, and a plurality of sound-absorbing members arranged on the exhaust passage to pass the air therethrough.

Abstract: With regard to a distortion correction apparatus and method which are applicable to hardware for real-time distortion correction, provided are a distorted image correction apparatus and method for correcting a distortion of an image by using a non-polynomial estimation function suitable for a hardware operation, and for correcting the distortion of the image by utilizing a morphing form.

Abstract: A refrigerator includes: a body; a storage compartment formed in the body; and a cold air generating unit installed in the storage compartment and including a heat exchanger for generating cold air, wherein the heat exchanger includes: a tube, which forms a heat-exchanging space and extends in one direction and in which a refrigerant flows; heat-exchanging fins disposed to be in contact with the tube in the heat-exchanging space; headers connected to one side and the other side of the tube, respectively; and a refrigerant pipe connected to the headers so that the refrigerant is introduced into/discharged from the tube, and a plurality of flow paths on which the refrigerant flows, are formed in the tube.

Abstract: With regard to a distortion correction apparatus and method which are applicable to hardware for real-time distortion correction, provided are a distorted image correction apparatus and method for correcting a distortion of an image by using a non-polynomial estimation function suitable for a hardware operation, and for correcting the distortion of the image by utilizing a morphing form.

Abstract: A catalyst for reforming hydrocarbons may include a catalytically active amount of nickel or nickel oxide dispersed on a metal oxide support. The metal oxide support may be of a single-metal oxide of a first metal or a complex-metal oxide of the first metal and a second metal. A co-catalyst of magnesium oxide (MgO) may anchor the nickel or nickel oxide onto the metal oxide support.

Abstract: A catalyst for reforming hydrocarbons may include a catalytically active amount of nickel or nickel oxide dispersed on a metal oxide support. The metal oxide support may be of a single-metal oxide of a first metal or a complex-metal oxide of the first metal and a second metal. A co-catalyst of magnesium oxide (MgO) may anchor the nickel or nickel oxide onto the metal oxide support.

Abstract: In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.

Abstract: A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.