Abstract: An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.

Abstract: Methods of fabricating a floating gate of a flash memory cell are provided in which a first polysilicon layer is formed between first and second isolation layers. An upper region of the first polysilicon layer is then oxidized. The oxidized upper region of the first polysilicon layer is subsequently removed. A second polysilicon layer is formed on the first polysilicon layer. The second polysilicon layer and the first polysilicon layer are patterned to form the floating gate.

Abstract: A method of forming a floating gate of a non-volatile memory device can include etching a mask pattern formed between field isolation regions in a field isolation pattern on a substrate to recess a surface of the mask pattern below an upper surface of adjacent field isolation regions to form an opening having a width defined by a side wall of the adjacent field isolation regions above the surface. Then the adjacent field isolation regions is etched to increase the width of the opening.