Abstract: An apparatus constructed with a plural of independent reactors for depositing thin films is provided. The apparatus includes a chamber consisting of a base plate, a chamber wall and a chamber cover. A plural of identical and independent reactors are mounted inside the chamber, and each reactor has two parts; a reactor lower body and a reactor upper body, where the reactor upper body is fixed to the chamber cover and the reactor lower body is fixed to the base plate and moves up and down, thereby the up position of the reactor lower body makes a contact with the reactor upper body and thus providing a vacuum-tight processing space. Since a plural of identical and independent reactors are used, the processing steps and conditions developed for a single substrate type of reactor can be used for multiple reactors with minor adjustments, by utilizing a relatively symmetrical process gas supply inlet tube and process gas inlet tube and process gas exhaust tube arrangements.

Abstract: Method for forming a thin film at low temperature by using plasma pulses is disclosed. While a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, so that a thin film is formed according to the method. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , are disclosed.