Abstract: A method for memory management, include allocating an empty page of a physical memory for reference data according to execution of an application program, and mapping the empty page to a virtual memory; checking a physical address of the physical memory to which the reference data has been loaded; mapping the checked physical address to the virtual memory to which the empty page has been mapped, and mapping the reference data; and releasing allocation of the allocated physical memory when the reference data is mapped to the virtual memory.

Abstract: An automatic para-virtualization apparatus of an OS kernel is provided. The automatic para-virtualization apparatus includes a kernel profiler that detects profile information from a native OS kernel, and a virtualization unit that automatically generates a para-virtualized OS kernel that operates on a para-virtualization virtual machine monitor by combining the native OS kernel and the profile information.

Abstract: Disclosed herein is a method and apparatus for supporting virtualization. In the method, conversion of source code of a loadable module is initiated. A virtualization-sensitive instruction is searched for during the conversion of the source code. If the virtualization-sensitive instruction has been found, a virtualization-sensitive instruction table is generated based on the found virtualization-sensitive instruction. The virtualization-sensitive instruction is substituted with an instruction recognizable in a privileged mode, based on the generated virtualization-sensitive instruction table. The loadable module is loaded and executed in a kernel. Accordingly, the present invention supports virtualization, thus minimizing overhead occurring in full virtualization, and guaranteeing the high performance provided by para-virtualization without modifying a source.

Abstract: Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.

Abstract: Disclosed herein are a data processing apparatus for pipeline execution acceleration and a method thereof. According to an exemplary embodiment of the present invention, the data processing apparatus for pipeline execution acceleration includes: a processor configured to sequentially execute a first application program and a second application program reading or writing a specific file; and a file system configured to complete a write for a file data for the specific file to a data block previously allocated from the first application program and provide the file data for the specific file to the second application program prior to executing a close call for the specific file from the first application program, when executing a read call for the specific file from the second application program.

Abstract: In a method of forming a pattern of a semiconductor device, a hard mask layer is formed on a substrate. A photoresist film is coated on the hard mask layer. The photoresist film is exposed and developed to form a first photoresist pattern. A smoothing process is performed on the first photoresist pattern to form a second photoresist pattern having a roughness property lower from that of the first photoresist pattern. In the smoothing process, a surface of the first photoresist pattern is treated with an organic solvent. An ALD layer is formed on a surface of the second photoresist pattern. The ALD layer is anisotropically etched to form an ALD layer pattern on a sidewall of the second photoresist pattern. The hard mask layer is etched using the second photoresist pattern and the ALD layer pattern as an etching mask to form a hard mask pattern.

Abstract: A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.

Abstract: Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.

Abstract: An OS switching method for switching an OS within several seconds in an information processing system is provided. In the information processing system which includes a processor, a main memory, a nonvolatile memory, and a plurality of input/output apparatuses, an OS switcher is executed when power is applied to the information processing system. When a first OS acquires an OS switch command that indicates a switch to a second OS while the first OS is activated and running, the first OS stores identification information of the second OS and information indicating an OS switch in the nonvolatile memory, and performs STR. The OS switcher switches an OS from the first OS to the second OS after the STR is completed. Accordingly, in the system, one OS can be quickly switched to another OS within several seconds, and a previous working environment can be maintained.

Abstract: A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.

Abstract: A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

Abstract: A method for memory management, include allocating an empty page of a physical memory for reference data according to execution of an application program, and mapping the empty page to a virtual memory; checking a physical address of the physical memory to which the reference data has been loaded; mapping the checked physical address to the virtual memory to which the empty page has been mapped, and mapping the reference data; and releasing allocation of the allocated physical memory when the reference data is mapped to the virtual memory.

Abstract: A computing system for virtualization-based resource management includes a plurality of physical machines, a plurality of virtual machines and a management virtual machine. The virtual machines are configured by virtualizing each of the plurality of physical machines. The management virtual machine is located at any one of the plurality physical machines. The management virtual machine monitors amounts of network resources utilized by the plurality of physical machines and time costs of the plurality of virtual machines, and performs a resource reallocation and a resource reclamation.

Abstract: A virtualization apparatus includes: an emulation manager for searching a basic block cache for an entry with an entry point, and, if there exists no entry with the entry point in the basic block cache, requesting the identification of a basic block corresponding to the entry point; a basic block identifier for identifying the basic block by sequentially analyzing instructions of a source binary in response to a request from the emulation manager; and an instruction replacer for writing an entry of the identified basic block in a replaced instruction table, writing a branch instruction for the entry of the basic block in the source binary, and then branching to the entry point. The apparatus further includes an instruction emulator for executing an instruction of the basic block when a branch to the entry point is made.

Abstract: Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.

Abstract: An automatic para-virtualization apparatus of an OS kernel is provided. The automatic para-virtualization apparatus includes a kernel profiler that detects profile information from a native OS kernel, and a virtualization unit that automatically generates a para-virtualized OS kernel that operates on a para-virtualization virtual machine monitor by combining the native OS kernel and the profile information.

Abstract: An OS switching method for switching an OS within several seconds in an information processing system is provided. In the information processing system which includes a processor, a main memory, a nonvolatile memory, and a plurality of input/output apparatuses, an OS switcher is executed when power is applied to the information processing system. When a first OS acquires an OS switch command that indicates a switch to a second OS while the first OS is activated and running, the first OS stores identification information of the second OS and information indicating an OS switch in the nonvolatile memory, and performs STR. The OS switcher switches an OS from the first OS to the second OS after the STR is completed. Accordingly, in the system, one OS can be quickly switched to another OS within several seconds, and a previous working environment can be maintained.

Abstract: A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer.

Abstract: Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.

Abstract: A method of forming hard mask employs a double patterning technique. A first hard mask layer is formed on a substrate, and a first sacrificial pattern is formed on the first hard mask layer by photolithography. Features of the first sacrificial pattern are spaced from one another by a first pitch. A second hard mask layer is then formed conformally on the first sacrificial pattern and the first hard mask layer so as to delimit recesses between adjacent features of the first sacrificial pattern. Upper portions of the second hard mask layer are removed to expose the first sacrificial pattern, and the exposed first sacrificial pattern and the second sacrificial pattern are removed. The second hard mask layer and the first hard mask layer are then etched to form a hard mask composed of residual portions of the first hard mask layer and the second hard mask layer.