Abstract: Disclosed is a light emitting diode using zinc oxide-aminopyrene core-shell quantum dots capable of improving the purity of blue light emission and securing long lifetime through the characteristic that emission transition of electrons proceeds in aminopyrene by applying the zinc oxide-aminopyrene quantum dots forming a core-shell structure with zinc oxide(ZnO) and 1-aminopyrene to the light emitting diode. The light emitting diode using the zinc oxide-aminopyrene core-shell quantum dots comprises a bule light-emitting layer of the ZnO@1-aminopyrene quantum dots having a core-shell structure in which ZnO quantum dots form a core, and 1-aminopyrene forms a shell.

Abstract: Disclosed are a zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission in which ZnO is combined with a polycyclic aromatic hydrocarbon having a blue light emitting characteristic to realize a quantum dot of a core-shell structure and electron emission transition is induced to proceed within the polycyclic aromatic hydrocarbon so that the purity of blue light emission is improved, and a manufacturing method thereof. The zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission includes a core-shell structure of zinc oxide-polycyclic aromatic hydrocarbon (ZnO-PAH) quantum dot in which the ZnO quantum dot and the PAH are combined, the ZnO-PAH quantum dot includes an energy level in a form of a Type II structure or a quasi-Type II structure.

Abstract: Disclosed are a flexible transparent electrode structure, a method for preparing the same, and an organic optoelectronic device using the same. The flexible transparent electrode structure includes: a flexible substrate; a thin film laminate of a triple-layer structure formed on both sides of the flexible substrate; and a transparent electrode formed on the thin film laminate of a triple-layer structure provided on one side of the flexible substrate, wherein the thin film laminate of a triple-layer structure includes a SiNx thin film, a SiOxNy thin film and a SiOx thin film formed sequentially on the flexible substrate. The flexible transparent electrode structure has superior light transmittance, water permeation resistance and oxygen permeation resistance, which can improve the electrical properties of an organic optoelectronic device.

Abstract: Disclosed is a zinc oxide-based quantum dot aggregate capable of emitting white light is a mixture of a zinc oxide quantum dot and a zinc oxide-graphene quantum dot, in which the zinc oxide quantum dot emits yellow light when being irradiated with an excitation wavelength shorter than a wavelength corresponding to an energy band gap of the zinc oxide quantum dot, the zinc oxide-graphene quantum dot is in a form in which a zinc oxide quantum dot is bound with graphene via a Zn—O—C bond and emits blue-based light, and white light emission is possible through color rendering of yellow light emission by the zinc oxide quantum dot and blue-based light emission by the zinc oxide-graphene quantum dot.

Abstract: Disclosed is a zinc oxide-based quantum dot aggregate capable of emitting white light is a mixture of a zinc oxide quantum dot and a zinc oxide-graphene quantum dot, in which the zinc oxide quantum dot emits yellow light when being irradiated with an excitation wavelength shorter than a wavelength corresponding to an energy band gap of the zinc oxide quantum dot, the zinc oxide-graphene quantum dot is in a form in which a zinc oxide quantum dot is bound with graphene via a Zn—O—C bond and emits blue-based light, and white light emission is possible through color rendering of yellow light emission by the zinc oxide quantum dot and blue-based light emission by the zinc oxide-graphene quantum dot.

Abstract: The present disclosure relates to a carbon fiber composition and a fabrication method for high-performance carbon fiber using the same. The method can fabricate high-performance carbon fiber (or graphite fiber) with lowering a graphitization temperature by using graphene carbon fiber composition including nano-sized graphene.

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0<x?0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055) deposited on the metal thin film.

Abstract: Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

Abstract: The present disclosure relates to a carbon fiber composition and a fabrication method for high-performance carbon fiber using the same. The method can fabricate high-performance carbon fiber (or graphite fiber) with lowering a graphitization temperature by using graphene carbon fiber composition including nano-sized graphene.

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0<x?0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-x(0<x?0.055) deposited on the metal thin film.

Abstract: Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

Abstract: Provided are a method of manufacturing multi-layered thin films, multi-layered thin films formed by the same, a method of manufacturing an organic thin film transistor including the same, and an organic thin film transistor manufactured by the same. The method of manufacturing multi-layered thin films includes: preparing a substrate; printing a blend solution including an organic semiconductor, an insulating polymer, and a solvent on the substrate; and simultaneously forming an insulating polymer thin film and an organic semiconductor thin film on the insulating polymer thin film by using a vertical phase separation phenomenon of the organic semiconductor and the insulating polymer, in which according to contents of the organic semiconductor and the insulating polymer in the blend solution and a printing speed of the blend solution, a width of the organic semiconductor thin film, and a thickness of the insulating polymer thin film are controlled.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2??[Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (?) and rectification ratio as well as transparency.

Abstract: The present disclosure relates to a method of growing a graphene nanopowder having a size of 10 nm or less into a graphene sheet having a seed size or more by using a graphene nanopowder as a seed. Further, in the present disclosure, a graphite sheet in which 2 to 20 layers of the graphene sheet are laminated may be prepared. The carbon sheet (that is, graphene and graphite sheets) may be prepared by preparing a graphene nanopowder (randomly distributed) on a substrate, and then subjecting the substrate to CVD treatment using a gas including a hydrocarbon gas in a chemical deposition apparatus.

Abstract: Disclosed are methods for preparing pure graphene using chemical bonding between graphite oxide and metal oxide nanoparticles, and graphene and nanoparticles having a quasi metal oxide-graphene core-shell prepared therefrom. The disclosed methods for preparing graphene allow chemical bonding and separation through a simple acid treatment process using inexpensive materials. Also, because the reaction can be carried out at low temperature, the processing cost is low. And, pure graphene with few impurities can be prepared quickly in large scale.

Abstract: A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.

Abstract: A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.

Abstract: Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof.

Abstract: The present disclosure relates to a carbon fiber composition and a fabrication method for high-performance carbon fiber using the same. The method can fabricate high-performance carbon fiber (or graphite fiber) with lowering a graphitization temperature by using graphene carbon fiber composition including nano-sized graphene.