Patents by Inventor Won Kook Choi
Won Kook Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030066746Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polyType: ApplicationFiled: July 3, 2002Publication date: April 10, 2003Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
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Publication number: 20030052318Abstract: The present invention relates to a fabrication method of blue light emitting ZnO thin film phosphor. More particularly, the invention relates to a fabrication method of blue light emitting ZnO thin film phosphor simply by heat treatment without making Al-added alloy.Type: ApplicationFiled: November 20, 2001Publication date: March 20, 2003Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Won Kook Choi, Hyung Jin Jung
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Publication number: 20030042129Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polyType: ApplicationFiled: July 3, 2002Publication date: March 6, 2003Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
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Publication number: 20030000825Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polyType: ApplicationFiled: July 3, 2002Publication date: January 2, 2003Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
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Publication number: 20020189931Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polyType: ApplicationFiled: July 3, 2002Publication date: December 19, 2002Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
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Patent number: 6358378Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.Type: GrantFiled: January 24, 2001Date of Patent: March 19, 2002Assignee: Korea Institute of Science and TechnologyInventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song
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Publication number: 20020014597Abstract: An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.Type: ApplicationFiled: September 21, 2001Publication date: February 7, 2002Applicant: Korea Institute of Science and TechnologyInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Jung Cho
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Publication number: 20010045351Abstract: According to the present invention, there is provided a method for surface processing by plasma polymerization of a surface of a metal by using a DC discharge plasma, comprising the steps of: positioning an anode electrode which is substantially of metal to be surface-processed and a cathode electrode in a chamber; maintaining a pressure in the chamber at a predetermined vacuum level; blowing an unsaturated aliphatic hydrocarbon monomer gas or a fluorine-containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber; and applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas or the fluorine containing monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and also provided a metType: ApplicationFiled: June 22, 2001Publication date: November 29, 2001Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
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Patent number: 6319326Abstract: An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.Type: GrantFiled: August 7, 2000Date of Patent: November 20, 2001Assignee: Korea Institute of Science and TechnologyInventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Jung Cho
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Patent number: 6300641Abstract: A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.Type: GrantFiled: September 9, 1998Date of Patent: October 9, 2001Assignee: Korea Institute of Science and TechnologyInventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Kyong Sop Han, Sik Sang Gam
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Publication number: 20010017257Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.Type: ApplicationFiled: January 24, 2001Publication date: August 30, 2001Applicant: Korea Institute of Science and TechnologyInventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song
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Patent number: 6264709Abstract: An electrical or electronic device and a thin-film type battery are vertically integrated and interconnected for reducing the area occupied thereby, enabling a higher degree of device integration and simplifying their fabrication. An insulating layer is formed on the device, with vertical conductors extending respectively from a pair of terminals of the device through the insulating layer. Electrode conductors are formed on the insulating layer in contact with the respective vertical conductors and serve as the cathode and anode electrodes of a thin-film battery fabricated thereon.Type: GrantFiled: April 21, 1999Date of Patent: July 24, 2001Assignee: Korea Institute of Science and Tech.Inventors: Young Soo Yoon, Hyung Jin Jung, Won Kook Choi, Seok Jin Yoon
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Patent number: 6162513Abstract: A process for modifying a metal surface by irradiating energized ion particles onto a metal surface while blowing a reactive gas directly on the metal surface under a vacuum condition. The process can achieve the effect of decreasing the wetting angle of the polymer or metal surface and enhancing the strength and the surface energy of the metal.Type: GrantFiled: February 26, 1997Date of Patent: December 19, 2000Assignee: Korea Institute of Science and TechnologyInventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang
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Patent number: 6162512Abstract: A process for modifying a nitride surface includes irradiating energized ion particles onto the nitride surface while blowing a reactive gas directly on the nitride surface under a vacuum condition. An aluminum nitride for a direct bond copper (DBC) can be obtained by forming a thin copper film on the thusly modified nitride.Type: GrantFiled: April 18, 1997Date of Patent: December 19, 2000Assignee: Korea Institute of Science and TechnologyInventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Yong Bai Son
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Patent number: 6099917Abstract: A method for modifying an (oxide) material of a substrate surface to a nitride material by radiating reactive ion particles having a certain amount of energy onto the substrate surface is disclosed. The thin film deposited on the surface-modified substrate has improved material properties. In particular, a surface treatment using ion beam is executed on an Al.sub.2 O.sub.3 substrate to initially form an AlN thin film, and then a GaN thin film is deposited on said AlN thin film. From this, it is possible to obtain a high quality GaN thin film having a better material property, compared with a GaN thin film according to the prior art.Type: GrantFiled: November 17, 1998Date of Patent: August 8, 2000Assignee: Korea Institute of Science and TechnologyInventors: Seok-Keun Koh, Hyung-Jin Jung, Won-Kook Choi, Dong-Hwa Kum, DongJin Byun
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Patent number: 6059937Abstract: The present invention relates to a sensor for detecting hydrocarbon type gas such as methane gas and propane gas, and process for manufacturing thereof. SiO.sub.2 was deposited in 1 .mu.m by ion beam sputtering with a mixed gas (3:2) of argon and oxygen on a silicon wafer in the process. In case of a propane sensor, platinum electrode is deposited in 600 .ANG. by ion beam sputtering on a tin oxide thin film synthesized by ionized beam of which the oxygen ion energy is 0 to 500 eV by using poly alumina. In case of a methane sensor, heat treatment at 500.degree. C. was performed for 1 hour in the air in order for the thin film to be stable at high operation temperature, while heat treatment was not performed in case of propane sensor. The sensor was manufactured by adding platinum or palladium thereto by argon ion beam sputtering. The thin film type tin oxide sensor according to the present invention exhibited an excellent selectivity of 47.4% even at low temperature of 150.degree. C.Type: GrantFiled: May 28, 1996Date of Patent: May 9, 2000Assignee: Korea Gas CorporationInventors: Seok Keun Koh, Hyung Jin Jung, Seok Kyun Song, Won Kook Choi, Dongsoo Choi, Jin Seok Jeon
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Patent number: 6051115Abstract: An adhesive strength increasing method which does not need a bulky apparatus such as an ion implantation apparatus and prevent the characteristic of a material from being degraded by using a high level current ion of a low level energy, thus increasing an adhesive strength between a metal thin film and a glass substrate. In the present invention, a metal is deposited on a substrate an inert gas or a reactive gas having a predetermined energy is irradiatd to the deposited metal thin film, and then the metal thin film is sealed, thus increasing an adhesive strength between a metal thin film and a glass substrate.Type: GrantFiled: July 15, 1997Date of Patent: April 18, 2000Assignee: Korea Institute of Science and TechnologyInventors: Hong Kyu Jang, Seok Keun Koh, Hyung Jin Jung, Won Kook Choi
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Patent number: 5989990Abstract: The present invention relates to tinoxide thin film, a process for manufacturing thereof comprising the step of depositing tin while providing oxygen or ionized oxygen around a substrate, and relates to a gas detecting sensor prepared by the use of such tinoxide thin film.Type: GrantFiled: February 14, 1996Date of Patent: November 23, 1999Assignee: Korea Gas CorporationInventors: Seok Keun Koh, Hyung Jin Jung, Seok Kyun Song, Won Kook Choi, Dongsoo Choi, Jin Seok Jeon
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Patent number: 5965629Abstract: A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.Type: GrantFiled: April 11, 1997Date of Patent: October 12, 1999Assignee: Korea Institute of Science and TechnologyInventors: Hyung Jin Jung, Seok Keun Koh, Won Kook Choi, Kyong Sop Han, Sik Sang Gam
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Patent number: 5855683Abstract: An improved thin film deposition apparatus which is capable of easily increasing the temperature of a crucible using low electric power, for thus reducing the maintenance cost of the system, and fabricating a thin film having a constant characteristic by using a lower current density variation based on a distance, for thus increasing the reliability of a thin film device, whereby it is possible to fabricate a more compact product and to more easily maintain the system, which includes a heat shielding cylindrical chamber, a cylindrical chamber located within the heat shielding cylindrical chamber, a crucible section including a crucible and a heat filament arranged at an inner and lower portion of the cylindrical chamber, an ionization section having an anode and an ionization filament arranged in an upper portion inside the cylindrical chamber, and a magnet for enhancing an ionization efficiency, an upper and lower filament support for supporting the heater filament and the ionization filament, an upper and lType: GrantFiled: February 7, 1997Date of Patent: January 5, 1999Assignee: Korea Institute of Science and TechnologyInventors: Seok Keun Koh, Hong Kyu Jang, Hyung Jin Jung, Won Kook Choi