Patents by Inventor Won Kyu Kim
Won Kyu Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8847300Abstract: A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.Type: GrantFiled: December 17, 2009Date of Patent: September 30, 2014Assignee: SK Hynix Inc.Inventors: Sung-Jin Whang, Moon-Sig Joo, Kwon Hong, Jung-Yeon Lim, Won-Kyu Kim, Bo-Min Seo, Kyoung-Eun Chang
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Patent number: 8835314Abstract: A method for fabricating a semiconductor device includes forming an etch-target layer over a substrate having a first region and a second region, stacking first and second hard mask layers over the etch-target layer, forming spacer patterns over the second hard mask layer of the first area, etching the second hard mask layer using the spacer patterns as an etch barrier, forming a hard mask pattern over the first hard mask layer of the second region, etching the first hard mask layer using the second hard mask layer of the first region and the hard mask pattern of the second region as etch barriers, removing the hard mask pattern of the second region, and etching the etch-target layer using the first and second hard mask layers of the first region and the first hard mask layer of the second region as etch barriers.Type: GrantFiled: May 23, 2012Date of Patent: September 16, 2014Assignee: Hynix Semiconductor Inc.Inventor: Won-Kyu Kim
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Publication number: 20140017889Abstract: A method of forming a fine pattern of a semiconductor device using double SPT process, which is capable of implementing a line and space pattern having a uniform fine line width by applying a double SPT process including a negative SPT process, is provided. The method includes a first SPT process and a second SPT process and the second SPT process includes a Negative SPT process.Type: ApplicationFiled: November 16, 2012Publication date: January 16, 2014Applicant: SK HYNIX INC.Inventors: Ki Lyoung LEE, Cheol Kyu BOK, Won Kyu KIM
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Publication number: 20140002019Abstract: Provided is a battery exchanging type charging station system for an electric vehicle. The battery exchanging type charging station system includes a charging station body formed with a structure in which the electric vehicle freely enters and exits and including a battery loading unit for receiving the battery, a battery replacing robot mounted in the charging station body to perform a battery replacement operation, a charging station control unit to control the battery replacing robot such that the battery replacement operation is performed by controlling the battery replacing robot, an information recognition unit configured to obtain data on an electric vehicle that enters the charging station body and/or data on a type, size, charging state, release date, charging date or the like of the battery, and a charging station control unit that allows a replacement operation of the battery to be performed by controlling the battery replacing robot.Type: ApplicationFiled: July 1, 2012Publication date: January 2, 2014Applicant: Kookmin University Industry Academy Cooperation FoundationInventors: Jun Seok Park, Won-Kyu Kim, Hee-Jeing Park, Hee Seok Moon, Woongchul Choi, Jayil Jeong, Chi Man Yu, Do Yang Jung, Yong-hark Shin, Jae-Hong Park
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Publication number: 20130342310Abstract: Disclosed is an electric vehicle, a battery charging station, and an electric vehicle battery exchange reservation system including the same. The electric vehicle includes a power level detection unit adapted to detect a power level of a battery mounted on the electric vehicle; a communication unit adapted to communicate with a battery charging station; and a control unit adapted to determine a battery charging station, in which the battery of the electric vehicle is to be exchanged, based on the power level of the battery and a route of travel of the electric vehicle and transmit a battery exchange reservation command to the determined battery charging station. Based on the battery power level of the electric vehicle, a battery charging station existing along the route of travel is requested to provide battery information, and battery exchange is reserved accordingly, so that batteries can be exchanged more efficiently and conveniently.Type: ApplicationFiled: June 25, 2012Publication date: December 26, 2013Applicant: Kookmin Universty Industry Academy Cooperation FoundationInventors: Jun-Seok PARK, Won-Kyu KIM, Hee-Jeing PARK, Hee-Seok MOON, Wong-Chul CHOI, Jay-Il JEONG, Chi-Man YU, Do-Yang JUNG, Yong-Hark SHIN, Yae-Hong PARK
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Publication number: 20130192060Abstract: Provided is an electric bus battery exchange station. The electric bus battery exchange station according to the present invention includes: an exchange station body having a battery exchange, wherein said battery exchange unit is projected out to be connected with a hole of; an imaging unit taking images of the electric bus moving toward said exchange station body; an entry process storing unit storing entry process information needed in order that the electric bus is positioned exactly below the battery exchange unit; an entry information output unit comparing an entry state of the electric bus obtained from images taken by said imaging unit with the entry information stored, and outputting entry information for modifying the entry state of the electric bus to make equal to said entry process information; and an entry information providing unit providing information outputted by said entry information output unit to the electric bus.Type: ApplicationFiled: July 1, 2012Publication date: August 1, 2013Applicants: Industry-University Cooperation Foundation of Korea Aerospace University, Kookmin University Industry Academy Cooperation FoundationInventors: Jun Seok Park, Won-Kyu Kim, Won-Jae Jung
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Publication number: 20130197803Abstract: Provided is an electric bus and an electric bus battery exchange system. The electric bus according to the present invention includes: a battery exchange hole disposed on top of the electric bus for exchanging a discharged battery for a charged battery; a front camera unit taking front images in the process of entering the battery exchange station for battery exchange; a communication unit for receiving position information of the battery exchange unit from the battery exchange station; a route output unit outputting a predicted driving route for reaching a swapping point below the battery exchange unit based on the front images taken by the front camera unit and the position information of the battery exchange unit; and a display unit displaying the predicted driving route outputted by the route output unit, superimposed on the front images taken by the front camera unit.Type: ApplicationFiled: July 1, 2012Publication date: August 1, 2013Applicants: Industry-University Cooperation Foundation of Korea Aerospace University, Kookmin University Industry Academy Cooperation FoundationInventors: Jun Seok Park, Won-Kyu Kim, Won-Jae Jung
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Publication number: 20130169378Abstract: An apparatus includes: a first apparatus port receiving a first signal having a first frequency; a second apparatus port outputting the first signal having the first frequency; a first passive device connected between the first and second apparatus ports; a second passive device connected between the first and second apparatus ports; a plurality of phase shifters each providing a corresponding phase shift, wherein at least one of the phase shifters provides its phase shift in a first signal path between the first and second apparatus ports through the first passive device, and wherein at least another phase shifter provides its phase shift in a second signal path between the first and second apparatus ports through the second passive device. The phase shifts are selected to cancel an upper or lower intermodulation product between the first signal and a second signal having a second frequency received at the second apparatus port.Type: ApplicationFiled: December 30, 2011Publication date: July 4, 2013Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.Inventors: Won Kyu Kim, David A. Feld, Paul Bradley
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Publication number: 20130153315Abstract: Disclosed is an electric vehicle battery attaching/detaching device including a battery having incision recesses formed on lateral portions, respectively, each incision recess having a lower engaging ledge; a battery mounting unit adapted to detachably mount the battery, the battery mounting unit having grasping holders formed on a bottom portion and adapted to engage with or disengage from the lower engaging ledges of the battery incision recesses; and a driving means adapted to rotate the grasping holders in response to an electric signal so that the grasping holders engage with or disengage from the lower engaging ledges of the battery incision recesses.Type: ApplicationFiled: June 25, 2012Publication date: June 20, 2013Applicants: Motex Products Co., Ltd., Industry-University Cooperation Foundation of Korea Aerospace University, Kookmin Universty Industry Academy Cooperation FoundationInventors: Chi-Man YU, Joo-Sub SIM, Yong-Geu PARK, Woong-Sung JANG, Yun-ha KIM, Jun-Seok PARK, Woong-Chul CHOI, Jay-II JEONG, Won-Kyu KIM
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Publication number: 20130157461Abstract: A method for fabricating a semiconductor device includes forming an etch-target layer over a substrate having a first region and a second region, stacking first and second hard mask layers over the etch-target layer, forming spacer patterns over the second hard mask layer of the first area, etching the second hard mask layer using the spacer patterns as an etch barrier, forming a hard mask pattern over the first hard mask layer of the second region, etching the first hard mask layer using the second hard mask layer of the first region and the hard mask pattern of the second region as etch barriers, removing the hard mask pattern of the second region, and etching the etch-target layer using the first and second hard mask layers of the first region and the first hard mask layer of the second region as etch barriers.Type: ApplicationFiled: May 23, 2012Publication date: June 20, 2013Inventor: Won-Kyu KIM
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Patent number: 8466066Abstract: A method for forming a micro-pattern in a semiconductor device includes forming a hard mask layer and a sacrificial layer over an etch target layer, forming a plurality of openings having a hole shape in the sacrificial layer, forming spacers over inner sidewalls of the openings to form first hole patterns inside the openings, etching the sacrificial layer outside of the sidewalls of the openings using the spacers in a manner that the sacrificial layer in a first area remains partially and the sacrificial layer in a second area is removed to form second hole patterns, wherein the first area is smaller than the second area, and etching the hard mask layer using the remaining sacrificial layer and the spacers including the first and second hole patterns.Type: GrantFiled: June 27, 2009Date of Patent: June 18, 2013Assignee: Hynix Semiconductor Inc.Inventor: Won-Kyu Kim
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Publication number: 20130070749Abstract: A device for separating signal transmission and reception has first, second, and third device ports, a circulator including a first circulator port, a second circulator port and a third circulator port, a transmission filter coupled between the first circulator port and the first device port, and a reception filter coupled between the third circulator port and the third device port. The second circulator port is coupled to the second device port An input to the first port is output from the second port and an input to the second port is output from the third port. The circuit provides isolation between transmission and reception to improve communication efficiency and can reduce the size of a communication system.Type: ApplicationFiled: September 20, 2011Publication date: March 21, 2013Applicant: Avago Technologies Wireless IP (Singapore) Pte. Ltd.Inventor: Won Kyu Kim
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Publication number: 20120306445Abstract: Provided is a battery exchange method for an electric vehicle. The battery exchange method includes (a) opening a protection cover of a battery mounting module installed at an upper portion of the electric vehicle, and transmitting an open signal to a battery charge station; (b) releasing a locking unit of a pre-mounted battery, and transmitting an unlocking signal to the battery charge station; (c) determining and storing a mounting location of the battery using an image sensor; (d) controlling movements and operations of a battery replacing robot when the unlocking signal is confirmed, and ejecting the pre-mounted battery from a battery seating base of the battery mounting module; (e) controlling movements and operations of the battery replacing robot to move a prepared fully charged battery into the battery mounting module, and mounting the fully charged battery on the battery seating base in the battery charge station.Type: ApplicationFiled: May 31, 2012Publication date: December 6, 2012Applicant: Kookmin University Industry Academy Cooperation FoundationInventors: Jun Seok Park, Won-Kyu KIM, Hee-Jeing Park, Hee Seok Moon, Woongchul Choi, Jayil Jeong, Chi Man Yu, Do Yang Jung, Yong-hark Shin, Jae-Hong Park
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Patent number: 8242022Abstract: A method for forming a fine pattern in a semiconductor device using a quadruple patterning includes forming a first partition layer over a first material layer which is formed over a substrate, performing a photo etch process on the first partition layer to form a first partition pattern, performing an oxidation process to form a first spacer sacrificial layer over a surface of the first partition pattern, forming a second spacer sacrificial layer over the substrate structure, forming a second partition layer filling gaps between the first partition pattern, removing the second spacer sacrificial layer, performing an oxidation process to form a third spacer sacrificial layer over a surface of the second partition layer and define a second partition pattern, forming a third partition pattern filling gaps between the first partition pattern and the second partition pattern, and removing the first and third spacer sacrificial layers.Type: GrantFiled: June 27, 2009Date of Patent: August 14, 2012Assignee: Hynix Semiconductor Inc.Inventor: Won-Kyu Kim
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Patent number: 8232187Abstract: A doping method for a semiconductor device includes forming a trench in a semiconductor substrate, forming a doped layer doped with a dopant over the undoped layer, and forming a doped region into which the dopant is diffused, wherein the doped region is a portion of the semiconductor substrate in contact with the doped layer.Type: GrantFiled: July 7, 2010Date of Patent: July 31, 2012Assignee: Hynix Semiconcuctor Inc.Inventor: Won-Kyu Kim
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Patent number: 8202795Abstract: A method of fabricating a semiconductor device, the method includes forming gate patterns on a substrate, recessing the substrate between the gate patterns, thereby forming a first resulting structure including recesses, forming a gate spacer layer on an entire surface of the first resulting structure including the gate patterns, etching the gate spacer layer at a bottom of the recess, and forming a plug on the recess, thereby forming a second resulting structure including the plug.Type: GrantFiled: December 28, 2007Date of Patent: June 19, 2012Assignee: Hynix Semiconductor Inc.Inventors: Min-Suk Lee, Won-Kyu Kim
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Publication number: 20120135605Abstract: A method for fabricating a semiconductor device includes forming a first trench by etching a substrate, forming a liner layer on a surface of the first trench, forming a sacrificial spacer pattern covering one sidewall of the first trench over the liner layer, forming a second trench by etching the substrate under the first trench using the sacrificial spacer pattern and the liner layer as etch barriers, forming a protection layer on a surface of the second trench, and forming a side contact region by selectively removing the protection layer formed on an upper portion of one sidewall of the second trench.Type: ApplicationFiled: September 13, 2011Publication date: May 31, 2012Inventor: Won-Kyu KIM
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Publication number: 20120009787Abstract: A method for forming a masking layer of a semiconductor device includes forming a plurality of pillar structures separated by a trench, forming a gap-fill material partially filling the trench and exposing an upper sidewall of each pillar structure, forming a masking layer that covers the pillar structures and the gap-fill material, performing an ion implantation to the masking layer to form an implanted portion covering upper portion of the gap-fill material and one side of the upper sidewalls of each pillar structure and a non-implanted portion covering the other side of the upper sidewalls of each pillar structure, forming a sacrificial layer over the masking layer, exposing the non-implanted portion of the masking layer, and selectively removing the exposed non-implanted portion.Type: ApplicationFiled: November 17, 2010Publication date: January 12, 2012Inventor: Won-Kyu KIM
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Patent number: 8074610Abstract: A boiler includes a combustion chamber, a heat exchange section, and an outer housing. Coupling holes are formed in the outer housing, a circulation chamber is formed at a lower portion of the outer housing, and a burner is provided at an upper portion of the combustion chamber so as to generate heat in a downward direction thereof. The combustion chamber is vertically installed in one of the coupling holes, and a lower portion of the combustion chamber is communicated with the circulation chamber. The heat exchange section includes first and second heat exchangers and is vertically installed in the outer housing adjacent to the combustion chamber. An upper portion of the heat exchange section is coupled to one of the coupling holes and a lower portion of the heat exchange section is communicated with the circulation chamber.Type: GrantFiled: December 15, 2004Date of Patent: December 13, 2011Assignee: Kyungdong Navien Co., Ltd.Inventors: Won-Kyu Kim, Myung-Gi Min, Chan-Woo Park
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Publication number: 20110159692Abstract: A method for fabricating semiconductor device includes forming a nitride pattern and a hard mask pattern over a substrate, forming a trench by etching the substrate using the hard mask pattern as an etch barrier, forming an oxide layer filling the trench, performing a planarization process on the oxide layer until the nitride pattern is exposed, and removing the nitride pattern though a dry strip process using a plasma.Type: ApplicationFiled: May 5, 2010Publication date: June 30, 2011Inventors: Won-Kyu Kim, Tae-Woo Jung, Chang-Hee Shin