Abstract: An organic light-emitting display device includes a substrate. A buffer layer is formed on the substrate. A thin film transistor is disposed on the buffer layer. The thin film transistor includes an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer, and a second insulating layer. An uneven pattern is formed by patterning the buffer layer. A first pixel electrode is disposed in an opening formed in the second insulating layer. The first pixel electrode includes a transparent conductive oxide. A second pixel electrode is disposed on the first pixel electrode. The second pixel electrode includes a semi-transmissive layer. An organic lighting-emitting layer is formed on the second pixel electrode. An opposite electrode is formed on the organic lighting-emitting layer.

Abstract: A thin film transistor is disclosed. The thin film transistor may include a semiconductor formed on a substrate, a gate insulating layer formed on the semiconductor, a gate electrode formed on the gate insulating layer and including a plurality of branches overlapping the semiconductor, an interlayer insulating layer at least partially overlapping the gate electrode, and a repair pattern formed on the interlayer insulating layer. The repair pattern may be formed overlapping the branches. The repair pattern may also be formed in a closed loop.

Abstract: An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.

Abstract: A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.

Abstract: An organic light-emitting display apparatus includes an active layer of a thin film transistor (TFT), a gate electrode including a transparent conductive material or a metal that on the active layer, a first insulating layer on the substrate, source and drain electrodes electrically connected to the active layer, a second insulating layer between the gate electrode and the source and drain electrodes, a first conductive layer of a transparent conductive material on the first insulating layer, a second conductive layer on the first conductive layer, the second conductive layer being a metal, a third conductive layer on the second conductive layer, the third conductive layer being made of a same material as the source and drain electrodes, and being connected to the first conductive layer; and a protection layer that includes a transparent conductive oxide, the protection layer being on the third conductive layer.

Abstract: A laser crystallization system is disclosed. In one embodiment, the laser crystallization system includes i) a mother substrate including first, second, and third display regions sequentially arranged in a first direction and ii) a stage for supporting the mother substrate and moving in the first direction and in a second direction. The system also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the side in the first direction. Furthermore, the first and second laser beams may correspond to widths of sides of the first and third display regions.

Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Abstract: An organic light emitting diode (OLED) display device and a method of manufacturing the same. The device includes a substrate, a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode, a first pixel electrode coupled to one of the source and drain electrodes, a rough portion on the first pixel electrode, a second pixel electrode on the rough portion and having a rough pattern, an intermediate layer on the second pixel electrode including an organic emission layer (EML), and an opposing electrode on the intermediate layer.

Abstract: In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.

Abstract: An organic light emitting display device includes: a substrate; a thin film transistor (TFT) on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an organic light emitting device including a pixel electrode that contacts at least one of the source electrode or the drain electrode of the TFT, an interlayer including a light emitting layer, and a counter electrode facing the pixel electrode, the pixel electrode, the interlayer, and the counter electrode being stacked; and a cathode contact part including a first contact layer and a second contact layer, the first contact layer being at a same layer as the active layer and being doped with ion impurities, the second contact layer including a same material as the source electrode and the drain electrode and coupling the first contact layer and the counter electrode to each other.

Abstract: A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first and second directions perpendicular to each other. The embodiment also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the first, second, and third display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the one side in the first direction.

Abstract: Provided are an apparatus and method of grouping and displaying messages. The apparatus verifies a grouping condition corresponding to messages, generates group message boxes obtained by grouping the messages based on the grouping condition, and displays the group message boxes. The group message boxes are connected with a reference axis, and the reference axis is used to arrange the group message boxes according to the grouping condition.

Abstract: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

Abstract: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized.

Abstract: An organic light-emitting display apparatus basically comprises a thin film transistor, an organic light-emitting device and a pad electrode, and provides an improved adhesive force between a pad portion and an electrode and a stable signal supply. A method of manufacturing the organic light-emitting display apparatus comprises mask processes for forming on a curve layer of a thin film transistor, a pixel electrode and a first pad electrode, a gate electrode and a second pad electrode, contact holes and an interlayer insulating layer, source and drain electrodes and a third pad electrode, and a pixel define layer.

Abstract: An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed.

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.

Abstract: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.

Abstract: An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.