Abstract: The invention relates to a grid array type lead frame having a plurality of leads classified into groups by length. The leads extend to respective lead ends, in each of which at least one different plane direction-converting lead part and/or at least one identical plane direction-converting lead part is formed by at least one bending part, whereby the lead ends are distributed in a grid array. The invention also includes a grid array type lead frame, which is as small as or similar to that of semiconductor chip in area while the lead ends are arrayed on one plane, and are at a farther distance away from neighboring ones but in a higher number per area, in such a manner that they form a grid array.

Abstract: The invention relates to a grid array type lead frame having a plurality of leads classified into groups by length forming a lead end grid array semiconductor package. The leads extend to respective lead ends, in each of which at least one different plane direction-converting lead part and/or at least one identical plane direction-converting lead part is formed by at least one bending part, whereby the lead ends are distributed in a grid array. The invention includes a lead end grid array semiconductor package employing the grid array type lead frame, which is as small as or similar to that of semiconductor chip in area while the lead ends are arrayed on one plane, farther distant way from neighboring ones but in a higher number per area, in such a manner that they form a grid array.

Abstract: A semiconductor package provided with a heat sink adapted to discharge heat from the package. The package has an oxidation film formed on an upper surface portion of the heat sink to which a semiconductor chip is attached, thereby improving the bonding between the semiconductor chip and heat sink to prevent the occurrence of an interface peel-off and the formation of cracks. This results in an improvement in reliability. A silver layer or a double layer consisting of a nickel layer and a palladium layer formed over the nickel layer is plated on the remaining upper surface portion of the heat sink not attached with the semiconductor chip. Accordingly, it is also possible to achieve easy ground bonding and power bonding. This results in an improvement in performance of the finally produced semiconductor package.

Abstract: A heat sink-integrated semiconductor package is fabricated by a characteristic method comprising the steps of dispensing a liquid epoxy resin over at least the bare surface of a heat sink mounted with a semiconductor chip, curing said dispensed liquid epoxy resin to form a first encapsulating part so as to prevent delamination at the interface between said heat sink and said semiconductor chip, molding a mold compound to form a second encapsulating part to protect said package from the external environment. The semiconductor package of the present invention, the first encapsulating part is of stronger bonding strength than the second encapsulating part, so that the delamination phenomenon at the interface between heat sink and semiconductor chip can be prevented or relieved efficiently.

Abstract: A lead frame for semiconductor packages is disclosed. In the lead frame, some of the inner leads in the four sides are extended and provided with connection bars on their inside ends. Alternatively, diagonally arranged tie bars of the lead frame are extended and provided with a rectangular guide ring on their inside ends. The connection bar or guide ring functions as a dam for restricting possible overflow of adhesive, which adhesive is applied on the heat sink for bonding a semiconductor chip to the heat sink. The lead frame of the invention also prevents waste of expensive tape by letting the adhesive tape adhere only to the connection bars or to a given portion of the guide ring when mounting the lead frame to the heat sink and makes it possible higher integration of semiconductor chip by making connection bar and guide ring from the lead or the tie bar.