Abstract: In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to the gate line, and the storage member has a storage line, a first storage electrode, and a second storage electrode. A data member is formed on an active layer. The data member includes a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode and a fourth storage electrode overlapped with the second storage electrode. Thus, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of a display apparatus.

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Abstract: A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

Abstract: A thin film transistor according to an embodiment of the present invention includes: a substrate; a control electrode disposed on the substrate; a gate insulating layer disposed on the control electrode; a semiconductor member disposed on the gate insulating layer, overlapping the control electrode, and including a first portion of amorphous silicon and a second portion of polycrystalline silicon; an input electrode contacting the semiconductor member; and an output electrode contacting the semiconductor member.

Abstract: A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

Abstract: The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

Abstract: Provided are a method of manufacturing a liquid crystal display including an amorphous silicon thin film transistor, a liquid crystal display, and an aging system adapted to the method of manufacturing the liquid crystal display.

Abstract: In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to the gate line, and the storage member has a storage line, a first storage electrode, and a second storage electrode. A data member is formed on an active layer. The data member includes a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode and a fourth storage electrode overlapped with the second storage electrode. Thus, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of a display apparatus.

Abstract: A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode, forming a gate insulating layer on the gate line, forming a semiconductor stripe on the gate insulating layer; forming ohmic contacts on the semiconductor stripe, forming a data line including a source electrode and a drain electrode on the ohmic contacts, depositing a passivation layer on the data line and the drain electrode, and forming a pixel electrode connected to the drain electrode.

Abstract: In an operation control apparatus and a method thereof, the compressor can be protected from overloading through a current control device instead of an OLP (Over Load Protector) and a PTC thermistor (Positive Temperature Coefficient thermistor). The operation control apparatus includes: a stroke estimated unit for estimating a stroke of the compressor on the basis of a current and a voltage applied to an interior motor of the compressor and a motor constant of the interior motor; a control unit for generating a control signal for varying a stroke of the compressor on the basis of the estimated stroke value and a preset stroke reference value; and a current control means being turned on/off so as to vary a stroke voltage applied to the interior motor of the compressor.

Abstract: A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.