Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

Abstract: A method of manufacturing strengthened glass includes: preparing glass including blocking patterns on a surface thereof, portions of the surface exposed between the blocking patterns; forming a metal particle layer on the portions of the surface of the glass exposed between the blocking patterns; removing the blocking patterns from the surface of the glass, to maintain the metal particle layer on the surface of the glass; with the metal particle layer maintained on the surface of the glass, etching the surface of the glass using the metal particle layer as an etching mask to form an etched surface of the glass, such etched surface including protruding patterns spaced apart from each other by portions of a common reference surface; and chemically strengthening the etched surface of the glass at the protruding patterns and at the reference surface.

Abstract: A cover window is disclosed. The cover window may include a first surface, a second surface opposite the first surface, a first polishing surface extending from an end of the first surface along a first direction, the first polishing surface having a first inclination angle, and a second polishing surface extending from an end of the second surface along a second direction, the second polishing surface having a second inclination angle. The first polishing surface and the second polishing surface may be asymmetric with respect to a center plane, the center plane passing through a center of the cover window and in parallel with the first surface.

Abstract: A substrate polishing system includes: a polishing machine and a substrate transporter. The polishing machine includes: a lower surface plate to which a substrate is mounted, and an upper surface plate which faces the lower surface plate and polishes the substrate in cooperation with the lower surface plate, the upper surface plate having a larger area than the substrate mounted on the lower surface plate. The substrate transporter is adjacent to the polishing machine and commonly transports the substrate to and from the polishing machine in a first direction, attaches the substrate to the lower surface plate before polishing thereof, and separates from the lower surface plate the substrate after polishing thereof.

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.

Abstract: The present invention relates to a neodymium compound represented by Formula 1 and a catalyst for diene polymerization including the same.

Abstract: The present invention provides a catalyst composition including a functionalizing agent of the following Formula 1 together with a rare earth metal compound, an alkylating agent, and a halogen compound, having good catalytic activity and polymerization reactivity and useful for the preparation of a conjugated diene-based polymer having high linearity and excellent processability, and a conjugated diene-based polymer prepared using the catalyst composition. (X1)a—Sn—(X2)4-a,??[Formula 1] In Formula 1, a, X1, and X2 are the same as defined in the disclosure.

Abstract: The present invention provides a catalyst composition including a functionalizing agent of the following Formula 1 together with a rare earth metal compound, an alkylating agent, and a halogen compound, having good catalytic activity and polymerization reactivity and useful for the preparation of a conjugated diene-based polymer having high linearity and excellent processability, and a conjugated diene-based polymer prepared using the catalyst composition. (X1)a-M1-([Y-M2-(X2)n-1])m-a??[Formula 1] In Formula 1, a, m, n, M1, M2, X1, X2 and Y are the same as defined in the disclosure.

Abstract: The present invention provides 1,4-cis polybutadiene having high linearity with an ?S/R value of 1 or greater at 100° C., and accordingly, is capable of reducing resistance properties, particularly rolling resistance, and greatly enhancing fuel efficiency properties when used in a rubber composition.

Abstract: The present invention provides a catalyst composition exhibiting, by including a lanthanide rare earth element-containing compound; modified methylaluminoxane; a halogen compound; and an aliphatic hydrocarbon-based solvent, excellent catalytic activity even with a small main catalyst amount, capable of preparing a conjugated diene-based polymer having excellent catalytic activity and thereby having high cis-1,4-bond content ratio, high linearity, and narrow molecular weight distribution, and capable of reducing polymerization reaction time, and a method for preparing the same.

Abstract: The present invention provides a method for preparing a conjugated diene-based polymer including preparing a mixture of a molecular weight modifier and a conjugated diene-based monomer; and polymerization reacting the mixture using a catalyst composition including a lanthanide rare earth element-containing compound, modified methylaluminoxane, a halogen compound and an aliphatic hydrocarbon-based solvent, and therefore, capable of preparing a conjugated diene-based polymer having a high cis-1,4-bond content ratio, high linearity and narrow molecular weight distribution.

Abstract: Embodiments of the present disclosure provide an ultrasonic cavity probe including a grip configured to be held by a user, a lens unit having a predetermined curvature radius, and configured to be inserted into a bodily cavity and to be brought into contact with a skin inside the bodily cavity, a head unit including a first side for mounting the lens unit and rounded corners, and a connecting portion configured to connect the head unit and the grip and to make a first angle with the head unit.

Abstract: The present invention relates to a neodymium compound represented by Formula 1 and a catalyst for diene polymerization including the same.

Abstract: A bundle trailer for containers including (i) a supporting frame on which a plurality of bundles are located; (ii) a plurality of bundles, each bundle comprising: a bundle frame, a plurality of containers containing a chemical, and at least one bundle value for controlling delivery of the chemical in the containers; (iii) at least one trailer valve; and (iv) at least one clamp for fixing the bundle is disclosed. The bundle trailer is capable of delivering high purity hygroscopic, corrosive chemicals, such as elemental fluorine and mixtures thereof, with good flexibility, high safety, and low cost.

Abstract: A bundle trailer for containers including (i) a supporting frame on which a plurality of bundles are located; (ii) a plurality of bundles, each bundle comprising: a bundle frame, a plurality of containers containing a chemical, and at least one bundle value for controlling delivery of the chemical in the containers; (iii) at least one trailer valve; and (iv) at least one clamp for fixing the bundle is disclosed. The bundle trailer is capable of delivering high purity hygroscopic, corrosive chemicals, such as elemental fluorine and mixtures thereof, with good flexibility, high safety, and low cost.

Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

Abstract: An exposure mask for forming a photodiode of an image sensor and a method of manufacturing an image sensor using the exposure mask may be disclosed. An exposure mask for forming a photodiode of an image sensor includes a plurality of main open patterns, each having a first open pattern that is rectangular and a second open pattern extending outward from at least one corner of the first open pattern, and an open serif extending outward from each of the corners of the second open pattern that do not overlap with the first open pattern, covering a predetermined area adjacent to the second open pattern.

Abstract: Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.

Abstract: One embodiment generally described herein can be characterized as a semiconductor device. The semiconductor device can include a first transistor on a semiconductor substrate. A first interlayer insulating layer may be disposed over the first transistor and includes a first recess region. A single-crystalline semiconductor pattern may be disposed in the first recess region. A single-crystalline semiconductor plug may connect the semiconductor substrate to the single-crystalline semiconductor pattern. A second transistor may be disposed on the single-crystalline semiconductor pattern.

Abstract: A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.